• Proceedings of the KIEE Conference
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• 2005.10c
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• pp.104-106
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• 2005

In this paper, 3-dimensional magnetic field of coil is analyzed by using biot-sarvart law considering singularity. The RMSP(reduced magnetic scalar potential) arc employed in order to reduce the number of unknown variables in FEM(Finte Element Analysis) or BEM(Boundary Element Method). It Is necessary to calculate magnetic field of souce current when RMSP is used. Biot-savart law is generally used. it is difficult to calculate the field when the source point is in inside the coil. To integrate using gaussian quadrature, the cross section of coil is divided considering the position of field point when field point is inside coil. The proposed method shows good agreement of magnetic field compared with FEMLAB, OPERA3D.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1997.10a
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• pp.145-153
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• 1997

Dynamic characteristics are investigated when a nonlinear system showing periodic and chaotic responses under harmonic excitation is exposed to random perturbation. About two well potential problem, probability of homoclinic bifurcation is estimated using stochastic generalized Meinikov process and quantitive characteristics are investigated by calculation of Lyapunov exponent. Critical excitaion is calculated by various assumptions about Gaussian Melnikov process. To verify the phenomenon graphically Fokker-Planck equation is solved numerically and the original nonlinear equation is numerically simulated. Numerical solution of Fokker-Planck equation is calculated on Poincare section and noise induced chaos is studied by solving the eigenvalue problem of discretized probability density function.

• Journal of the Korean Society for Precision Engineering
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• v.12 no.4
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• pp.46-54
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• 1995

This paper presents a simple method for measurenemt of roughness of ground surfaces. The present method utilizes fluxes of scattered lights condensed through lenses aligned along the specular direction. A theoretical analysis is preformed for the purpose of investigating the possibility of the method as well as determining the experimental condition. Experiments are also performed to show the effectiveness and robustness of the proposed method. The theoretical and experimental results show that the proposed method is simple enouth to implement and has a potential to identify a wide range of roughness of ground surfaces.

• Journal of the Korean Society for Precision Engineering
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• v.14 no.1
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• pp.158-167
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• 1997

For the use of a mobile robot in dynamic environment, a collision-avoidance algorithm with moving obsta- cle is necessary. In this paper, a collsion-avoidance algorithm of a mobile robot is presented, when a mobile robot detects the collision with moving obstacle on the navigational path. Using reported positions of moving obstacle with sensors, the mobile robot predicts the next position of moving obstacle with possibility of collision. The velocity of moving obstacle is modeled as random walk process with Gaussian distribution. The optimal collision-avoidance path in which turning motion of the mobile robot is considered is generated with relative velocity between the mobile robot and moving obstacle. For the safety of collision-avoidance path, attractive potential with the safety factor is suggested. The simulation results using this algorithm show the mobile robot avoids collision with moving obstacle in many cases.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.683-685
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• 2012

This paper have presented the analysis of the change for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET with two gates to be next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold chatacteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering is changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Korean Journal of Remote Sensing
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• v.28 no.3
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• pp.307-318
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• 2012

To understand forest structures, the Geoscience Laser Altimeter System (GLAS) instrument have been employed to measure and monitor forest canopy with feasibility of acquiring three dimensional canopy structure information. This study tried to examine the potential of GLAS dataset in measuring forest canopy structures, particularly maximum canopy height estimation. To estimate maximum canopy height using feasible GLAS dataset, we simply used difference between signal start and ground peak derived from Gaussian decomposition method. After estimation procedure, maximum canopy height was derived from airborne Light Detection and Ranging (LiDAR) data and it was applied to evaluate the accuracy of that of GLAS estimation. In addition, several influences, such as topographical and biophysical factors, were analyzed and discussed to explain error sources of direct maximum canopy height estimation using GLAS data. In the result of estimation using direct method, a root mean square error (RMSE) was estimated at 8.15 m. The estimation tended to be overestimated when comparing to derivations of airborne LiDAR. According to the result of error occurrences analysis, we need to consider these error sources, particularly terrain slope within GLAS footprint, and to apply statistical regression approach based on various parameters from a Gaussian decomposition for accurate and reliable maximum canopy height estimation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.372-377
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• 2013

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.4
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• pp.885-890
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• 2014

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The Gaussian function as doping distribution is used to approch experimental results. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.818-821
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.825-828
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• 2012

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.