• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.191-192
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• 2003

For the CNT-FED to be cost-effective, many efforts for the lower voltage operation have been made in the under-gate cathode structure. In this study, the effects of the frit proportion in the CNT paste, cathode electrode width, CNT-to-counter electrode gap, and the CNT length in the cathode structure were examined.

• Journal of electromagnetic engineering and science
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• v.9 no.4
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• pp.218-222
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• 2009

In this paper, we present a CPW-based 77 GHz 3-stage power amplifier MMIC for automotive radar systems. The power amplifier MMIC has been realized using a 130 nm $In_{0.88}$GaP/$In_{0.4}$AlAs/$In_{0.4}$GaAs metamorphic high-electron mobility transistors(mHEMTs) technology and an output stage with a cascode configuration. This produced a good output power and gain performance at 77 GHz. The fabricated power amplifier MMIC exhibited a small-signal gain of 18 dB, an output power of 17 dBm and 9 % power added efficiency(PAE) at 77 GHz with a total gate width of 800 ${\mu}m$ in the output stage. These performances could be useful to low-cost and small-sized components for 77 GHz automotive radar systems.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.31-37
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• 2000

In the case of metal-induced lateral crystallization (MILC) for low temperature poly-Si TFT, offset length between Ni-thin film and the sides of gate could be modified to control the location of MILC boundary. Electrical characteristics were compared to analyze the effect of MILC boundary that was located either in or out of the channel region of the TFT. By removing the MILC boundary from channel region, on current, subthreshold slope and leakage current properties could be improved. When MILC boundary was located in the channel region, leakage current was reduced with electrical stress biasing. The amount of reduction increased as the channel width increased, but it was independent of the channel length.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.250-254
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• 2016

Currently, power conversion system which converts AC to DC Power is applied in domestic urban railway. The diode rectifier is used in most of them. However the diode rectifier can not control the output voltage and can not regenerate power as well. On the other hand, PWM (pulse width modulation) converter using IGBT (isolated gate bipolar transistor) can control output voltage, allowing it to reduce the output voltage drop. Moreover the Bi-directional conduction regenerates power which does not require additional device for power regeneration control. This paper compared the simulation results for the DC power supply system on both the diode rectifier and the PWM converter. Under the same load condition, simulation circuit for each power supply system was constructed with the PSIM (performance simulation and modeling tool) software. The load condition was set according to the resistance value of the currently operating impedance of light rail line, and the line impedance was set according to the distance of each substations. The train was set using a passive resistor. PI (proportional integral) controller was applied to regulate the output voltage. PSIM simulation was conducted to verify that the PWM Converter was more efficient than the diode rectifier in DC Traction power supply system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.1-5
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• 2012

In this paper, matching characteristic of MIM (metal-insulator-metal) capacitor with $Al_2O_3/HfO_2/Al_2O_3$ (AHA) structure is analyzed. The floating gate capacitance measurement technique (FGMT) was used for analysis of matching characteristic of the MIM capacitors in depth. It was shown that matching coefficient of AHA MIM capacitor is 0.331%${\mu}m$ which is appropriate for application to analog/RF integrated circuits. It was also shown that the matching coefficient has a more strong dependence on the width than length of MIM capacitor.

• The KIPS Transactions:PartC
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• v.11C no.7 s.96
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• pp.951-958
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• 2004

Nowadays NGN is developed for supporting the e-Commerce, Internet trading, e-Government, e-mail, virtual-life and multimedia. Internet gives us the benefit of remote access to the information but causes the attacks that can break server and modify information. Since 2000 Nimda, Code Red Virus and DSoS attacks are spreaded in Internet. This attack programs make tremendous traffic packets on the Internet. In this paper, we designed and developed the Bandwidth Controller in the gateway systems against the bandwidth saturation attacks. This Bandwidth con-troller is implemented in hardware chipset(FPGA) Virtex II Pro which is produced by Xilinx and acts as a policing function. We reference the TBF(Token Bucket Filter) in Linux Kernel 2.4 and implemented this function in HDL(Hardware Description Language) Verilog. This HDL code is synthesized in hardware chipset and performs the gigabit traffic in real time. This policing function can throttle the traffic at the rate of band width controlling policy in bps speed.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.227-228
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• 2006

In this paper, we introduce the design and fabrication of 60 GHz low noise amplifier MMIC for IEEE802.15.3c WPAN system. The 60 GHz LNA was designed using ETRI's $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The performances of the fabricated 60 GHz LNA MMIC are operating frequency of $60.5{\sim}62.0\;GHz$, small signal gain ($S_{21}$) of $17.4{\sim}18.1\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-14{\sim}-3\;dB$, output reflection coefficient ($S_{22}$) of $-11{\sim}-5\;dB$ and noise figure (NF) of 4.5 dB at 60.75 GHz. The chip size of the amplifier MMIC was $3.8{\times}1.4\;mm^2$.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.623-624
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• 2006

In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

• Journal of IKEEE
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• v.24 no.1
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• pp.208-215
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• 2020

In this study, the output 380V direct current DC-DC converter for low-voltage direct current(LVDC) distribution was designed in three types, and the voltage and current characteristics of the three types of DC-DC converter were compared and analyzed through simulation. When the converter was configured using a parallel structure with the power metal-oxide semiconductor field-effect transistor and two current suppression insulated-gate bipolar transistors(IGBTs), the time when the output voltage was stabilized at DC 380V was relatively short with 9ms and the range of output current changes was also between 44.8A and 50.2A, indicating that the width of change was much smaller and the effect of current suppression was greater compared to when IGBT was not applied(68~83A). These results suggest that the proposed DC-DC converter for LVDC distribution is likely to be applied to smart grid construction.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.6
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• pp.48-51
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• 2009

One-stage low noise amplifier (LNA) using 65 nm RF CMOS technology below 20 GHz is designed to find the optimal bias voltage and optimal width of input transistor so that the maximum figure of merit (FoM) has been achieved. If the frequency is higher than 13 GHz, the amplifier needs two-stage to achieve the higher gain. If the frequency is lower than 5 GHz, one additional capacitor between gate and source should be added to control the power under the limitation. This paper summarizes one-stage LNA overall performances below 20 GHz and this approach can also be applied to other CMOS technology of LNA designs.