Journal of electromagnetic engineering and science

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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A CPW-Based 77 GHz Power Amplifier with Cascode Structure Using a 130 nm In0.88GaP/In0.4AlAs/In0.4GaAs mHEMTs

  • Kim, Young-Min (Institute of New Media and Communications, School of Electrical Engineering, Seoul National University) ;
  • Koh, Yu-Min (Institute of New Media and Communications, School of Electrical Engineering, Seoul National University) ;
  • Park, Young-Rak (Institute of New Media and Communications, School of Electrical Engineering, Seoul National University) ;
  • Lee, Si-Young (Institute of New Media and Communications, School of Electrical Engineering, Seoul National University) ;
  • Seo, Kwang-Seok (Institute of New Media and Communications, School of Electrical Engineering, Seoul National University) ;
  • Kwon, Young-Woo (Institute of New Media and Communications, School of Electrical Engineering, Seoul National University)
  • Published : 2009.12.31
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Abstract

In this paper, we present a CPW-based 77 GHz 3-stage power amplifier MMIC for automotive radar systems. The power amplifier MMIC has been realized using a 130 nm $In_{0.88}$GaP/$In_{0.4}$AlAs/$In_{0.4}$GaAs metamorphic high-electron mobility transistors(mHEMTs) technology and an output stage with a cascode configuration. This produced a good output power and gain performance at 77 GHz. The fabricated power amplifier MMIC exhibited a small-signal gain of 18 dB, an output power of 17 dBm and 9 % power added efficiency(PAE) at 77 GHz with a total gate width of 800 ${\mu}m$ in the output stage. These performances could be useful to low-cost and small-sized components for 77 GHz automotive radar systems.

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References

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