Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of Matching Characteristics of MIM Capacitors with Al2O3/HfO2/Al2O3

MIM 구조를 갖는 Al2O3/HfO2/Al2O3 캐패시터의 정합특성 분석

  • Jang, Jae-Hyung (Department of Electronics Engineering, Chungnam National University) ;
  • Kwon, Hyuk-Min (Department of Electronics Engineering, Chungnam National University) ;
  • Jung, Yi-Jung (Department of Electronics Engineering, Chungnam National University) ;
  • Kwak, Ho-Young (Department of Electronics Engineering, Chungnam National University) ;
  • Kwon, Sung-Gyu (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Hwan-Hee (Department of Electronics Engineering, Chungnam National University) ;
  • Go, Sung-Yong (DMS Co. Ltd.) ;
  • Lee, Weon-Mook (DMS Co. Ltd.) ;
  • Lee, Song-Jae (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
  • Received : 2011.10.27
  • Accepted : 2011.11.29
  • Published : 2012.01.01
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Abstract

In this paper, matching characteristic of MIM (metal-insulator-metal) capacitor with $Al_2O_3/HfO_2/Al_2O_3$ (AHA) structure is analyzed. The floating gate capacitance measurement technique (FGMT) was used for analysis of matching characteristic of the MIM capacitors in depth. It was shown that matching coefficient of AHA MIM capacitor is 0.331%${\mu}m$ which is appropriate for application to analog/RF integrated circuits. It was also shown that the matching coefficient has a more strong dependence on the width than length of MIM capacitor.

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References

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