Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on 3-D Analytical Model of Ion Implanted Profile

이온 주입된 프로파일의 3-D의 해석적인 모델에 관한 연구

  • Jung, Won-Chae (Department of Electronic Engineering, Kyonggi University) ;
  • Kim, Hyung-Min (Department of Mechanical System Engineering, Kyonggi University)
  • 정원채 (경기대학교 전자공학과) ;
  • 김형민 (경기대학교 기계시스템공학과)
  • Received : 2011.11.23
  • Accepted : 2011.12.14
  • Published : 2012.01.01
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Abstract

For integrated complementary metal oxide semiconductor (CMOS) circuits, the lateral spread for two-dimensional (2-D) impurity distributions are very important for the analyzing the devices. The measured two-dimensional SEM data obtained using the chemical etching-method matched very well with the results of the Gauss model for boron implanted samples. But the profiles in boron implanted silicon were deviated from the Gauss model. The profiles in boron implanted silicon were shown a little bit steep profile in the deep region due to backscattering effect on the near surface from the bombardments of light boron ions. From the simulated 3-D data obtained using an analytical model, the 1-D and 2-D data were compared with the experimental data and could be verified the justification from the experimental data. The data of 3-D model were also shown good agreements with the experimental and the simulated data. It can be used in the 3-D chip design and the analysis of microelectro-mecanical system (MEMS) and special devices.

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References

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