• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.254-254
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• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.889-893
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• 2015

In this work, the characteristics of GIDL current in nanowire GAA MOSFET with different channel width and hot carrier stress. When the gate length is fixed as a 250nm the GIDL current with different channel width of 10nm, 50nm, 80nm, and 130nm have been measured and analyzed. From the measurement, the GIDL is increased as the channel width decreaes. However, the derive current is increased as the channel width increases. From measurement results after hot carrier stress, the variation of GIDL current is increased with decreasing channel width. Finally, the reasons for the increase of GIDL current with decreasing channel width and r device. according to hot carrier stress GIDL's variation shows big change when width and the increase of GIDL current after hot carrier stress are confirmed through the device simulation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.2
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• pp.303-307
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• 2006

In this paper, we have designed the p-type metal-oxide semiconductor field-effect transistor(pMOSFET) for SiGe devices with gate lengths of $0.9{\mu}m$ and $0.1{\mu}m$using the TCAD simulators. The electrical characteristics of devices have been investigated over the temperatures of 300 and 77K. We have used the two carrier transfer models(hydrodynamic model and drift-diffusion model). We how that the drain current is higher in the hydrodynamic model than the drift-diffusion model. When the gate length is $0.9{\mu}m$, the threshold voltage shows -0.97V and -1.15V for 300K and 77K, respectively. The threshold voltage is, however, nearly same at $0.1{\mu}m$ for 300K and 77K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.296-300
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• 2021

The performance of devices has been improved with fine processes from planar to three-dimensional transistors (e.g., FinFET, NWFET, and MBCFET). There are some problems such as a short channel effect or a self-heating effect occur due to the reduction of the gate-channel length by miniaturization. To solve these problems, we compare and analyze the electrical and thermal characteristics of FinFET and GAAFET devices that are currently used and expected to be further developed in the future. In addition, the optimal structure according to the Fin shape was investigated. GAAFET is a suitable device for use in a smaller scale process than the currently used, because it shows superior electrical and thermal resistance characteristics compared to FinFET. Since there are pros and cons in process difficulty and device characteristics depending on the channel formation structure of GAAFET, we expect a mass-production of fine processes over 5 nm through structural optimization is feasible.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.8-15
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• 2006

In this paper, the 94 GHz, low conversion loss, and high isolation single balanced mixer is designed and fabricated using GaAs-based metamorphic high electron mobility transistors (MHEMTs) with 70 nm gate length and the hybrid ring coupler with the micromachined transmission lines, dielectric-supported air-gapped microstrip lines (DAMLs). The 70 nm MHEMT devices exhibit DC characteristics with a drain current density of 607 mA/mm an extrinsic transconductance of 1015 mS/mm. The current gain cutoff frequency ($f_T$) and maximum oscillation frequency ($f_{max}$) are 320 GHz and 430 GHz, respectively. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of $3.57{\pm}0.22dB$ and the transmission loss of $3.80{\pm}0.08dB$ in the measured frequency range of 85 GHz to 105 GHz. This mixer shows that the conversion loss and isolation characteristics are $2.5dB{\sim}>2.8dB$ and under -30 dB, respectively, in the range of $93.65GHz{\sim}94.25GHz$. At the center frequency of 94 GHz, this mixer shows the minimum conversion loss of 2.5 dB at a LO power of 6 dBm To our knowledge, these results are the best performances demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.209-218
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• 2012

Recently, the Field Programmable Stateful Logic Array (FPSLA) was proposed as one of the most promising system integration technologies which will extend the life of the Moore's law. This work is the first proposal of the FPSLA design automation flow, and the approaches to logic synthesis, synchronization, physical mapping, and automatic placement of the FPSLA designs. The synchronization at each gate for pipelining determines the x-coordinates of cells, and reduces the placement to 1-dimensional problems. The objective function and its gradients for the non-linear optimization of the net length and placement density have been remodeled for the reduced global placement problem. Also, a recursive algorithm has been proposed to legalize the placement by relaxing the density overflow of bipartite bin groups in a top-down hierarchical fashion. The proposed model and algorithm are implemented, and validated by applying them to the ACM/SIGDA benchmark designs. The output state of a gate in an FPSLA needs to be duplicated so that each fanout gate can be connected to a dedicated copy. This property has been taken into account by merging the duplicated nets into a hyperedge, and then, splitting the hyperedge into edges as the optimization progresses. This yields additional 18.4% of the cell count reduction in the most dense logic stage. The practicality of the FPSLA can be further enhanced primarily by incorporating into the logic synthesis the constraint to avoid the concentrated fains of gates on some logic stages. In addition, an efficient algorithm needs to be devised for the routing problem which is based on a complicated graph. The graph models the nanowire crossbar which is trimmed to be embedded into the FPSLA fabric, and therefore, asymmetric. These CAD tools can be used to evaluate the fabric efficiency during the architecture enhancement as well as automate the design.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.421-427
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• 2009

We successfully fabricated 4.7-inch organic thin film transistors array with $640{\times}480$ pixels on flexible substrate. All the processes were done by photolithography, spin coating and ink-jet printing. The OTFT-Electrophoretic (EP) pixel structure, based on a top gate OTFT, was fabricated. The mobility, ON/OFF ratio, subthreshold swing and threshold voltage of OTFT on flexible substrate are: 0.01 ^2/V-s, 1.3 V/dec, 10E5 and -3.5 V. After laminated the EP media on OTFT array, a panel of 4.7-inch $640{\times}480$ OTFT-EPD was fabricated. All of process temperature in OTFT-EPD is lower than $150^{\circ}C$. The pixel size in our panel is $150{\mu}m{\times}150{\mu}m$, and the aperture ratio is 50 %. The OTFT channel length and width is 20 um and 200um, respectively. We also used OTFT to drive EP media successfully. The operation voltages that are used on the gate bias are -30 V during the row data selection and the gate bias are 0 V during the row data hold time. The data voltages that are used on the source bias are -20 V, 0 V, and 20 V during display media operation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.9C
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• pp.861-870
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• 2002

In this paper, with targeting on the drawback of RSA of operation speed, a new 1024-bit RSA cryptosystem has been proposed and implemented in hardware to increase the operational speed and perform the variable-length encryption. The proposed cryptosystem mainly consists of the modular exponentiation part and the modular multiplication part. For the modular exponentiation, the RL-binary method, which performs squaring and modular multiplying in parallel, was improved, and then applied. And 4-stage CSA structure and radix-4 booth algorithm were applied to enhance the variable-length operation and reduce the number of partial product in modular multiplication arithmetic. The proposed RSA cryptosystem which can calculate at most 1024 bits at a tittle was mapped into the integrated circuit using the Hynix Phantom Cell Library for Hynix 0.35㎛ 2-Poly 4-Metal CMOS process. Also, the result of software implementation, which had been programmed prior to the hardware research, has been used to verify the operation of the hardware system. The size of the result from the hardware implementation was about 190k gate count and the operational clock frequency was 150㎒. By considering a variable-length of modulus number, the baud rate of the proposed scheme is one and half times faster than the previous works. Therefore, the proposed high speed variable-length RSA cryptosystem should be able to be used in various information security system which requires high speed operation.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2003.09a
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• pp.44-44
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• 2003

As a basic measurement tool in the areas of animal models of human disease, gene expression and therapy, and drug discovery and development, small animal PET imaging is being used increasingly. An ideal small animal PET should have high sensitivity and high and uniform resolution across the field of view to achieve high image quality. However, the combination of long narrow pixellated crystal array and small ring diameter of small animal PET leads to the degradation of spatial resolution for the source located at off center. This degradation of resolution can be improved by determining the depth of interaction (DOI) in the crystal and by taking into account the information in sorting the coincident events. Among a number of 001 identification schemes, dual layer phsowich detector has been widely investigated by many research groups due to its practicability and effectiveness on extracting DOI information. However, the effects of each crystal length composing dual layer phoswich detector on DOI measurements and image qualities were not fully characterized. In order to minimize the DOI effect, the length of each layer of phoswich detector should be optimized. The aim of this study was to perform simulations using a simulation tool, GATE to design the optimum lengths of crystals composing a dual layer phoswich detector. The simulated small PET system employed LSO front layer LuYAP back layer phoswich detector modules and the module consisted of 8${\times}$8 arrays of dual layer crystals with 2 mm ${\times}$ 2 mm sensitive area coupled to a Hamamatsu R7600 00 M64 PSPMT. Sensitivities and variation of radial resolutions were simulated by varying the length of LSO front layer from 0 to 10 mm while the total length (LSO + LuYAP) was fixed to 20 mm for 10 cm diameter ring scanner. The radial resolution uniformity was markedly improved by using DOI information. There existed the optimal lengths of crystal layers to minimize the variation of radial resolutions. In 10 cm ring scanner configuration, the radial resolution was kept below 3.4 mm over 8 cm FOV while the sensitivity was higher than 7.4% for LSO 5 mm : LuYAP 15 mm phoswich detector. In this study, the optimal length of dual layer phoswich detector was derived to achieve high and uniform radial resolution.