• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.9
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• pp.4165-4170
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• 2012

In this paper, a method for the improvement in the gain and bandwidth of a microstrip-fed broadband planar quasi-Yagi antenna (QYA) is studied. The broadband characteristics of the QYA are achieved from the coplanar strip-fed planar dipole driver and a parasitic director close to the driver. In order to obtain stable gain variation over the required frequency band, a director and a ground reflector are appended to the driver having a nearby parasitic director. The QYA is fed through an integrated balun composed of a microstrip line and a slot line which are terminated in a short circuit. By adjusting the feeding point, a broadband impedance matching is obtained. A QYA with an operating frequency band of 1.75-2.7 GHz and a gain > 4.5 dBi is designed and fabricated on an FR4 substrate with dielectric constant of 4.4 and thickness of 1.6mm. The experimental results show that the fabricated antenna has good performance such as a broad bandwidth of 59.7%(1.55-2.87 GHz), a stable gain between 4.7-6.5 dBi, and a front-to-back ratio > 10 dB. The measured data agree well with the simulation, which validates this study.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.5
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• pp.523-532
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• 2008

In this paper, we proposed a U-shaped RFID tag antenna with isotropic radiation characteristic for the stable operation of RFID system. The proposed antenna is composed of a U-shaped half wavelength dipole and a rectangular-shaped feed. In order to have good impedance matching with a tag chip, the commercial tag chip is attached to the lower center of the feed. A gain deviation characteristic of the U-shaped tag antenna can be further improved by inserting a rectangular slit in the lower center of the U-shaped antenna body. On the condition of VSWR<2, the tag antennas of two structures satisfy the Korea UHF RFID bandwidth and showed the gain deviation of less than 1.63 dB and 0.74 dB for without slit and with slit, respectively. On the condition of VSWR<5.8, the U-shaped tag antenna showed the gain deviation of less than 3.8 dB and 1.2 dB for without slit and with slit, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.11A
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• pp.902-911
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• 2003

Using InGaP/GaAs HBT power cells with a 2.0${\times}$20$\mu\textrm{m}$$^2$ emitter area of a unit HBT, a two stage MMIC power amplifier has been developed for IMT-2000 handsets. An active-bias circuit has been used for temperature compensation and reduction in the idling current. Fitting on measured S-parameters of the HBT cells, circuit elements of HBT's nonlinear equivalent model have been extracted. The matching circuits have been designed basically with the extracted model. A two stage HBT MMIC power amplifier fabricated using ETRI's HBT process. The power amplifier produces an 1-㏈ compressed output power(P$\_$l-㏈/) of 28.4 ㏈m with 31% power added efficiency(PAE) and 23-㏈ power gain at 1.95 GHz in on-wafer measurement. Also, the power amplifier produces a 26 ㏈m output power, 28% PAE and a 22.3-㏈ power gain with a -40 ㏈c ACPR at a 3.84 ㎒ off-center frequency in COB measurement.quency in COB measurement.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.1
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• pp.106-113
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• 2003

In this paper, we proposed low noise amplifier for 2.4GHz ISM frequency with CMOS technology. The property of noise and gain is improved by cascode architecture. The architecture, which common source output of cascode is connected to input of parallel MOS, reduce IM. The LNA results based on Hynix 0.35${\mu}{\textrm}{m}$ 2poly 4metal CMOS processor with a 3.3V supply. It achieves a gain of 13dB, noise figure of 1.7dB, IP3 of 8dBm, Input/output matching of -31dB/-28dB, reverse isolation of -25dB. and power dissipation of 4.7mW with HSPICE simulation. The size of layout is smaller than 2 ${\times}$ 2mm with Mentor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.7
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• pp.608-616
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• 2009

This paper presents a broadband CPS-fed Yagi-Uda antenna. The antenna has a feedline structure much simpler than other Yagi-Uda antennas and it provides more design flexibility in arranging the reflector. To improve the impedance matching, a tapered CPS line is inserted between the thick and thin feedlines. The proposed antenna exhibits the bandwidth of $3.9{\sim}5.9$ GHz (|G| < -10 dB) and the gain of $6.5{\sim}8$ dBi within that bandwidth. At the center frequency of 4.9 GHz, the antenna shows the gain of 7.4 dBi, and HPBW of $98^{\circ}$ along the x-z plane and $73^{\circ}$ along the x-y plane.

• ETRI Journal
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• v.36 no.3
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• pp.352-360
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• 2014

This paper presents a 900 MHz zero-IF RF transceiver for IEEE 802.15.4g Smart Utility Networks OFDM systems. The proposed RF transceiver comprises an RF front end, a Tx baseband analog circuit, an Rx baseband analog circuit, and a ${\Delta}{\Sigma}$ fractional-N frequency synthesizer. In the RF front end, re-use of a matching network reduces the chip size of the RF transceiver. Since a T/Rx switch is implemented only at the input of the low noise amplifier, the driver amplifier can deliver its output power to an antenna without any signal loss; thus, leading to a low dc power consumption. The proposed current-driven passive mixer in Rx and voltage-mode passive mixer in Tx can mitigate the IQ crosstalk problem, while maintaining 50% duty-cycle in local oscillator clocks. The overall Rx-baseband circuits can provide a voltage gain of 70 dB with a 1 dB gain control step. The proposed RF transceiver is implemented in a $0.18{\mu}$ CMOS technology and consumes 37 mA in Tx mode and 38 mA in Rx mode from a 1.8 V supply voltage. The fabricated chip shows a Tx average power of -2 dBm, a sensitivity level of -103 dBm at 100 Kbps with PER < 1%, an Rx input $P_{1dB}$ of -11 dBm, and an Rx input IP3 of -2.3 dBm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.143-152
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• 2004

A novel low-power wideband bipolar second-generation current conveyors(CCIIs) and its application to universal instrumentation amplifier(UIA) were proposed. The CCII for accuracy voltage or current transfer characteristics and low current input impedance adopted adaptive current bias circuit into conventional class Ab CCII. The UIA consists of only two CCIIs and four resistors. Three instrumentation function of the UIA can be realized by selection of input signals and resistors. The simulation results show that the CCII has input impedance of 2.0$\Omega$ and the voltage gain of 60㏈ for frequency range from 0 to 50KHz when used as a voltage amplifier. The CCII has also good characteristics of current follower for current range from -100㎃ to ＋100㎃. The simulation results show that the UIA has three instrumentation amplifier functions without resistor matching. The UIA has the voltage gain of 40㏈ for frequency range from 0 to 100KHz when used as a fully-differential instrumentation amplifier. The power dissipations of the CCII and the UIA are 0.75㎽ and 1.5㎽ at supply voltage of $\pm$2.5V, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.4
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• pp.49-58
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• 2014

A low-swing differential near-ground signaling (NGS) transceiver for low-power high-speed mobile I/O interface is presented. The proposed transmitter adopts an on-chip regulated programmable-swing voltage-mode driver and a pre-driver with asymmetric rising/falling time. The proposed receiver utilizes a new multiple gain-path differential amplifier with feed-forward capacitors that boost high-frequency gain. Also, the receiver incorporates a new adaptive bias generator to compensate the input common-mode variation due to the variable output swing of the transmitter and to minimize the current mismatch of the receiver's input stage amplifier. The use of the new simple and effective impedance matching techniques applied in the transmitter and receiver results in good signal integrity and high power efficiency. The proposed transceiver designed in a 65-nm CMOS technology achieves a data rate of 13 Gbps/channel and 0.3 pJ/bit (= 0.3 mW/Gbps) high power efficiency over a 10 cm FR4 printed circuit board.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.6
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• pp.665-670
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• 2015

In this paper, We proposed a broadband RF amplifier for Microwave band receiver. We also proposed a broadband RF amplifier, designed by using EM simulation for reliable amplification of the received signal. Connected to a source terminal to via, it minimizes those which are the active elements of source-side oscillation as the operating element in an ideal GND, and a constant gain characteristic in a broadband. The goal of this was to obtain stable amplification characteristics. For implementing this architecture, we designed the broadband(500 MHz ~ 7 GHz) RF amplifier by using commercial GaAs FET, which operate on 720 MHz, 4,595 MHz, and 6,035 MHz by impedance matching. The voltage gain is 10.635 dB ~ 14.407 dB(737.5 MHz ~ 6.0575 GHz), P1dB is 20 dBc of band(1st harmonic/2nd harmonic).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.11B
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• pp.1612-1619
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• 2001

This paper examines the design, implementation characteristics of a folded dipole active integrated antenna. Our goal was to minimize the physical size of RF circuit and its insertion loss, and to make the high frequency tuning easier by directly integrating the ISM(Industrial Scientific & Medical) band power amplifier and antenna. Non-linear model has been used for highly accurate simulation of the power amplifier. The maximum power level was found by using the Load pull method before an impedance matching was achieved. It is found that the total power-added efficiency(PAE) including the driving amplifier was 31.5% and that the transmit power was 13.7 dBm. We also found that the proposed scheme with the smaller antenna as compared with the existing dipole antenna has 23.7 dB total gain including the antenna gain. The suppression of the second harmonic signal to the fundamental signal with respect to the fundamental signal was found to be more than 30 dBc.