• Proceedings of the KIEE Conference
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• 2004.07e
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• pp.55-57
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• 2004

$HgGa_{2}S_{4}Co^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the $HgGa_{2}S_{4}Co^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.13 no.6
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• pp.2925-2948
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• 2019

In order to improve the utilization of irrigation water resources of greenhouse tomatoes, a water-saving irrigation decision-making model based on genetic optimization T-S fuzzy neural network is proposed in this paper. The main work are as follows: Firstly, the traditional genetic algorithm is optimized by introducing the constraint operator and update operator of the Krill herd (KH) algorithm. Secondly, the weights and thresholds of T-S fuzzy neural network are optimized by using the improved genetic algorithm. Finally, on the basis of the real data set, the genetic optimization T-S fuzzy neural network is used to simulate and predict the irrigation volume for greenhouse tomatoes. The performance of the genetic algorithm improved T-S fuzzy neural network (GA-TSFNN), the traditional T-S fuzzy neural network algorithm (TSFNN), BP neural network algorithm(BPNN) and the genetic algorithm improved BP neural network algorithm (GA-BPNN) is compared by simulation. The simulation experiment results show that compared with the TSFNN, BPNN and the GA-BPNN, the error of the GA-TSFNN between the predicted value and the actual value of the irrigation volume is smaller, and the proposed method has a better prediction effect. This paper provides new ideas for the water-saving irrigation decision in greenhouse tomatoes.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.4B
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• pp.365-371
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• 2002

In this paper, the fabricated power PHEMT devices for millimeter-wave that is below a gate-length of 0.2 $\mu\textrm{m}$ using electronic beam lithography technologies, and the DC and frequency characteristics and an output power characteristics were Measured at the various bias conditions. The unit process that is used in PHEMT's manufacture used that low-resistance ohmic contact, air-bridge and back-side lapping process technologies, and so on. The fabricated power PHEMT have an S521 gain of 4 dB and a maximum transconductance(gm) of 317 mS/mm, an unilateral current gain(fT) of 62 GHz, a maximum oscillation frequency(fmax) of 120 GHz at 35 GHz, and a maximum power output(Pmax) of 16 dBm, a power gain(GP) of 4 dB and a drain efficiency(DE) of 35.5 %.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.159-162
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• 1999

In this paper, we have designed and fabricated a MMIC power amplifier for X-band using AlGaAs/InGaAs/GaAs PM-HEMTs and passive devices such as Ti thin film resistors, rectangular spiral inductors and MIM capacitors. The fabricated MMIC power amplifier for X-band shows that S/ sub 21/ and S$_{11}$ are 14.804 ㏈ and -29.577 at 8.18 GHz, respectively. The chip size is 1.86$\times$1.29 $\textrm{mm}^2$.>.>.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.2
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• pp.196-203
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• 1988

A new analytic model for small-singnal circuit model of GaAs MESFET's is presented. This model is a charge model which considers the formation of a statioanary Gunn-domain and the transistion region that exists in the depletion region boundary. From this charge model the analytic expression of the equivalent circuit elements is derived, and the voltage dependences of each element are explained. The results of the calcualtion are in good agreement with experimental data.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.547-554
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• 1990

Considering channel length modulation, we proposed a GaAs MESFET model for circuit simulator. In existing M.S. Shur's model, two different models are used according to pinch-off voltage of devices. One model for both type of devices was proposed. In this model we introduced weighted switching function(WSF) based on channel length modulation. This proposed model showed better accuracy comparing with existing single law model and complete velocity saturation model.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.43-44
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• 1997

We repport the effects of active nitrogens on the low-tempperature growth of GaN by a remote pplasma-enhanced metal-organic chemical vappor depposition method. the emission intensities of active nitrogens increase with fr ppower and nitrogen flow rate, but decrease with total reactor ppressure. Low-tempperature growth of GaN are greatly affected by the concentrations of active nitrogens and its concentrations are closely related with the emission intensities.

• Electronics and Telecommunications Trends
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• v.15 no.6 s.66
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• pp.113-117
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• 2000

본 고에서는 MHEMT(Metamorphic InAlAs/InGaAs HEMT) 구조의 특성, MHEMT 소자특성, MHEMT MMIC 결과와 향후의 기술동향을 논의한다.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.264-272
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• 2012

In this paper, we report THz generation and detection characteristics investigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5~2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 ${\mu}m$) antenna, and the cutoff frequency was ~2 THz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.671-677
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• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.