대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

GaAs MESFET의 AC특성 모델에 관한 연구

A Model for AC Characteristics of GaAs MESFET's

  • 김창우 (한양대학교 전자공학과) ;
  • 김홍배 (청주대학교 반도체공학과) ;
  • 곽계달 (한양대학교 전자공학과)
  • 발행 : 1988.02.01
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초록

A new analytic model for small-singnal circuit model of GaAs MESFET's is presented. This model is a charge model which considers the formation of a statioanary Gunn-domain and the transistion region that exists in the depletion region boundary. From this charge model the analytic expression of the equivalent circuit elements is derived, and the voltage dependences of each element are explained. The results of the calcualtion are in good agreement with experimental data.

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