• 전력전자학회논문지
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• 제26권5호
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• pp.325-333
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• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• 한국결정성장학회지
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• 제28권4호
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• pp.159-165
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• 2018

최근 전세계적으로 환경오염 및 에너지 고갈에 대한 대책 마련의 일환으로 에너지 재생 및 절약 소자인 고효율 친환경 전력반도체로서 GaN 전력소자에 대한 관심이 고조되어가고 있다. 이를 위해서, GaN 단결정 기판의 사용이 절실히 요구되는 바, Yole사 보고서(2013)와 국내 외 GaN 관련 산학연의 최신 발표(2017)를 바탕으로 최근 GaN 단결정 산업동향을 리뷰하였다. GaN 단결정 기판에 대한 연구개발은 저결함, 대구경을 목표로 지속적으로 진행되고 있으나, 아직 시장형성이 활성화되고 있지 못하다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2014년도 전력전자학술대회 논문집
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• pp.89-90
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• 2014

Recently, one of the switching rectifiers, Power Factor Correction Circuit is often applied in rectification stage to get high efficient conversion of AC-DC SMPS However, it becomes important to select optimal semiconductor switch as well as to design optimal rectifier for achieving higher power conversion. We performed experiments with MOSFET, SiC and GaN FET that are widely used in 600 W Interleaved CRM PFC and include the data in this report. The results are presented for discrete semiconductor and integrated implementations of interleaved CRM PFC.

• 한국전자파학회논문지
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• 제24권11호
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• pp.1064-1073
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• 2013

본 논문에서는 내부 고조파 조정 회로로 구성되는 셀룰러와 L-대역용 소형의 고효율 370 W GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) 소형 전력 증폭기(PA)를 구현하였다. 원천 및 2차 고조파 주파수에서 동시에 높은 효율을 내기 위해 새로운 회로 정합 형태를 적용했다. 소형화를 위하여 새로운 41.8 mm GaN HEMT와 2개의 MOS(Metal Oxide Semiconductor) 캐패시터를 구성 물질의 변화를 이용하여 열 저항을 개선한 $10.16{\times}10.16{\times}1.5Tmm^3$ 크기의 새로운 패키지에 와이어 본딩으로 결합하였다. 드레인 바이어스 48 V 인가 시, 개발된 GaN HEMT 전력 증폭기는 370 W 포화 출력 전력(Psat.)과 770~870 MHz에서 80 % 이상, 1,805~1,880 MHz에서 75 % 이상의 드레인 효율(DE)을 나타내었다. 이는 지금까지 보고된 셀룰러와 L대역에서 GaN HEMT 전력 증폭기 중 최고의 효율과 출력 전력 특성이다.

• 전력전자학회논문지
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• 제25권5호
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• pp.412-419
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• 2020

In this study, a 70 W buck converter using GaN metal-oxide-semiconductor field-effect transistor (MOSFET) is developed. This converter exhibits over 97 % efficiency, high power density, and 48 V-to-12 V/1.2 V/1 V (triple output). Three gate drivers and six GaN MOSFETs are placed in a 1 ㎠ area to enhance power density and heat dissipation capacity. The theoretical switching and conduction losses of the GaN MOSFETs are calculated. Inductances, capacitances, and resistances for the output filters of the three buck converters are determined to achieve the desired current, voltage ripples, and efficiency. An equivalent circuit model for the thermal analysis of the proposed triple-output buck converter is presented. The junction temperatures of the GaN MOSFETs are estimated using the thermal model. Circuit operation and temperature analysis are evaluated using a circuit simulation tool and the finite element analysis results. An experimental test bed is built to evaluate the proposed design. The estimated switch and heat sink temperatures coincide well with the measured results. The designed buck converter has 130 W/in³ power density and 97.6 % efficiency.

• ETRI Journal
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• 제39권1호
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• pp.62-68
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• 2017

In this paper, we present the design and characterization analysis of a cascode GaN field-effect transistor (FET) for switching power conversion systems. To enable normally-off operation, a cascode GaN FET employs a low breakdown voltage (BV) enhancement-mode Si metal-oxide-semiconductor FET and a high-BV depletion-mode (D-mode) GaN FET. This paper demonstrates a normally-on D-mode GaN FET with high power density and high switching frequency, and presents a theoretical analysis of a hybrid cascode GaN FET design. A TO-254 packaged FET provides a drain current of 6.04 A at a drain voltage of 2 V, a BV of 520 V at a drain leakage current of $250{\mu}A$, and an on-resistance of $331m{\Omega}$. Finally, a boost converter is used to evaluate the performance of the cascode GaN FET in power conversion applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.3-6
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• 2004

반도체 디자인, 공정 기술 및 패기지 기술의 발달에 따라 전력용 반도체는 소형화, 고성능화, 지능화하고 있다. 고속 구동이 용이한 때문에 MOSFET이나 IGBT등의 MOS-gate형 전력 반도체의 발전이 두드려지며, trench, charge balance, NPT 기술등이 패키지 기술과 더불어 이를 위한 주요 기술이 될것으로 보인다. SiC나 GaN등의 Wide Band Gap 물질들을 사용한 차세대 전력 반도체 연구도 활발히 진행되고 있다.

• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.671-675
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• 2010

Gallium nitride (GaN), wide bandgap semiconductor, has attracted much attention because they are projected to have much better performance than silicon. In this paper, effects of design parameters change of GaN power static induction transistor (SIT) on the electrical characteristics (breakdown voltage, on resistance) were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get power GaN SIT that has 600 V class breakdown voltage. As a result, we could get optimized 600 V class power GaN SIT that has higher breakdown voltage and lower On resistance with a thin (a several micro-meters) thickness of the channel layer.

• Journal of Power Electronics
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• 제9권1호
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• pp.36-42
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• 2009

This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.

• 전기학회논문지
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• 제66권9호
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• pp.1351-1358
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• 2017

In this work, we investigated radiation hardness of GaN-based transistors which are strong candidates for next-generation power electronics. Field effect transistors with three types of gate structures including metal Schottky gate, recessed gate, and p-AlGaN layer gate were fabricated on AlGaN/GaN heterostructure on Si substrate. The devices were irradiated with energetic protons and alpha-particles. The irradiated transistors exhibited the reduction of on-current and the shift of threshold voltage which were attributed to displacement damage by incident energetic particles at high fluence. However, FET operation was still maintained and leakage characteristics were not degraded, suggesting that GaN-based FETs possess high potential for radiation-hardened electronics.