ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
권호 표지
DOI QR코드

DOI QR Code

Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems

  • Received : 2016.03.17
  • Accepted : 2016.11.29
  • Published : 2017.02.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, we present the design and characterization analysis of a cascode GaN field-effect transistor (FET) for switching power conversion systems. To enable normally-off operation, a cascode GaN FET employs a low breakdown voltage (BV) enhancement-mode Si metal-oxide-semiconductor FET and a high-BV depletion-mode (D-mode) GaN FET. This paper demonstrates a normally-on D-mode GaN FET with high power density and high switching frequency, and presents a theoretical analysis of a hybrid cascode GaN FET design. A TO-254 packaged FET provides a drain current of 6.04 A at a drain voltage of 2 V, a BV of 520 V at a drain leakage current of $250{\mu}A$, and an on-resistance of $331m{\Omega}$. Finally, a boost converter is used to evaluate the performance of the cascode GaN FET in power conversion applications.

Keywords

References

  1. O. Ambacher et al., "Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization Charges in N- and Ga-Face AlGaN/GaN Heterostructures," J. Appl. Phys., vol. 85, no. 6, Mar. 1999, pp. 3222-3233. https://doi.org/10.1063/1.369664
  2. A. Fontsere et al., "A HfO2 Based 800 V/$300^{\circ}C$ Au-Free AlGaN/GaN-on-Si HEMT Technology," Int. Symp. Power Semicond. Devices ICs, Bruges, Belgium, June 3-7, 2012, pp. 37-40.
  3. H.S. Lee et al., "0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal," IEEE Electron Device Lett., vol. 36, no. 11, Nov. 2015, pp. 1132-1134. https://doi.org/10.1109/LED.2015.2475178
  4. W. Saito et al., "Recessed-Gate Structure Approach Toward Normally Off High-Voltage AlGaN/GaN HEMT for Power Electronics Applications," IEEE Trans. Electron Devices, vol. 53, no. 2, Feb. 2006, pp. 356-362. https://doi.org/10.1109/TED.2005.862708
  5. O. Hilt et al., "$70 m{\Omega}$/ 600 V Normally-off GaN Transistors on SiC and Si Substrates," IEEE Int. Symp. Power Semicond. Devices IC's, Hong Kong, May 10-14, 2015, pp. 237-240.
  6. Y. Cai et al., "High-Performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment," IEEE Electron Device Lett., vol. 26, no. 7, July 2005, pp. 435-437. https://doi.org/10.1109/LED.2005.851122
  7. L. Yuan, H. Chen, and K.J. Chen, "Normally-off AlGaN/GaN Metal-2DEG Tunnel-Junction Field-Effect Transistors," IEEE Electron Device Lett., vol. 32, no. 3, Mar. 2011, pp. 303-305. https://doi.org/10.1109/LED.2010.2095823
  8. Z. Tang et al., "600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT with Large Gate Swing and Low Current Collapse," IEEE Electron Device Lett., vol. 34, no. 11, Nov. 2013, pp. 1373-1375. https://doi.org/10.1109/LED.2013.2279846
  9. Y. Park et al., "Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment," Phys. Status Solidi A, vol. 212, no. 5, May 2015, pp. 1170-1173. https://doi.org/10.1002/pssa.201431737
  10. S.W. Han et al., "AlGaN/GaN Metal-Oxide-Semiconductor Heterojunction Field-Effect Transistor Integrated With Clamp Circuit to Enable Normally-off Operation," IEEE Electron Device Lett., vol. 36, no. 6, June 2015, pp. 540-542. https://doi.org/10.1109/LED.2015.2427202
  11. X. Huang et al., "Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration," IEEE Trans. Power Electron., vol. 29, no. 5, May 2014, pp. 2208-2219. https://doi.org/10.1109/TPEL.2013.2267804
  12. X. Huang et al., "Evaluation and Application of 600 V GaN HEMT in Cascode Structure," IEEE Trans. Power Electron., vol. 29, no. 5, May 2014, pp. 2453-2461. https://doi.org/10.1109/TPEL.2013.2276127
  13. Z. Liu et al., "Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT," IEEE Trans. Power Electron., vol. 29, no. 4, Apr. 2014, pp. 1977-1985. https://doi.org/10.1109/TPEL.2013.2264941
  14. P.-C. Chou and S. Cheng, "Performance Characterization of Gallium Nitride HEMT Cascode Switch for Power Conditioning Application," Mater. Sci. Eng., B, vol. 198, Aug. 2015, pp. 43-50. https://doi.org/10.1016/j.mseb.2015.04.003
  15. X. Huang et al., "Characterization and Enhancement of High-Voltage Cascode GaN Devices," IEEE Trans. Power Electron., vol. 62, no. 2, Feb. 2015, pp. 270-277. https://doi.org/10.1109/TED.2014.2358534
  16. W. Chang et al., "Design of Parasitic Inductance Reduction in GaN Cascode FET for High-Efficiency Operation," ETRI J., vol. 38, no. 1, Feb. 2016, pp. 133-140. https://doi.org/10.4218/etrij.16.0115.0019
  17. Z. Tang et al., "High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With $AlN/SiN_x$ Passivation," IEEE Electron Device Lett., vol. 34, no. 3, Mar. 2013, pp. 366-368. https://doi.org/10.1109/LED.2012.2236638
  18. A. Calmels, $V_{DS(on)}$, $V_{CE(sat)}$ Measurement in a High Voltage, High Frequency System, Application note APT0407, Nov. 2004. http://www.advancedpowertech.com

Cited by

  1. Power Semiconductor SMD Package Embedded in Multilayered Ceramic for Low Switching Loss vol.39, pp.6, 2017, https://doi.org/10.4218/etrij.17.0117.0113
  2. Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter vol.11, pp.11, 2017, https://doi.org/10.3390/en11113111
  3. Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview vol.12, pp.14, 2019, https://doi.org/10.3390/en12142663
  4. Efficiency improvement of a DC/DC converter using LTCC substrate vol.41, pp.6, 2017, https://doi.org/10.4218/etrij.2018-0551
  5. Theoretical and experimental analysis of a venting clip to reduce stray inductance in high‐power conversion applications vol.43, pp.6, 2017, https://doi.org/10.4218/etrij.2021-0024