• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.94-95
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• 2007

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program speed, reliability of memory device on interface trap between Si substrate and tunneling oxide was investigated. The devices were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SONOS cell transistors with larger interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. Therefore, to improve SANOS memory characteristic, it is very important to optimize the interface trap and charge trapping layer.

• Research in Community and Public Health Nursing
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• v.17 no.3
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• pp.326-333
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• 2006

Purpose: This study was attempted to investigate the relationship between the satisfaction of volunteering and the meaning in life of the elderly. Method: The subjects were 176 who had been volunteering in 7 general hospitals. in a metropolitan city, Korea. The data were gathered throughout August 2004. For measuring the satisfaction of volunteering, Kwon(1999) was modified and used, and for the meaning in life, Choi et al.(2003) was used. Result: Mean of the volunteering satisfaction was 3.00(Maximum, 4.00) and the highest domain was Social Contact and the lowest was Social Exchange. Mean of meaning in life was 3.02 (Maximum, 4.00) and the highest score was Family love and the lowest was Self Awareness & Self-Acceptance. Volunteering satisfaction was significantly different in age, religion, number of children and voluntary service time, and the meaning in life was different in religion, number of children, subjective health condition, subjective family relationship, and voluntary service time. Conclusion: There was positive correlation between volunteering satisfaction and meaning in life (r=.69 p=.000). According to the result, the satisfaction of volunteering could be make better meaning in life of the elderly. In order to increase the meaning in life and to improve volunteering satisfaction of the elderly, various social and personal efforts to participate in social service are would be adopted.

• Journal of Plant Biology
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• v.27 no.3
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• pp.179-189
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• 1984

Durch vergleichende Untersuchungen von Ribes nigrum L. var. 'Rosenthals Langtraubige Schwarze' zwischen $prim\"{a}rem$ und $sekund\"{a}rem$ Jugendstadium (P.J. und S.J.) eine vertiefte Einsicht in die beiden zeitlich unterschielich langen $Entwicklungsabl\"{a}ufe$ zu bekommen und auf diese Weise bessere Ansatzpunke $f\"{u}r$ die Regulierung der $Bl\"{u}tc-nknospeninduktion$ zu gewinnen, war das Ziel vorliegenden Untersuchungen. Diese Untersuchungen $f\"{u}hrten$ zu den flogenden Ergebnissen: Die Dauer der Jugendphase von Ribes nigrum L. betrug bei den P.J.-Pflanzen ca. 7 Monate, bei den S.J.-Pflanzen ca. 5 Monate. Die $Bl\"{u}hreife$-(Ripeness to flower)-setzte bei den P.J.-Pflanzen erst beim 20. Nodium ein, bei den S.J.-Pflanzen bereits beim 5. Nodium. Das $f\"{u}hrte$ dazu, da${\beta}$ bei gleicher Nodienzahl die P.J.-Pflanzen weniger $Bl\"{u}te-nknospen$ angesetzt hatten als die S.J.-Pflanzen. Die erste $Bl\"{u}tenknospendifferenzierung$ setzte bei den P.J.-Pflanzen in der oberen Triebmitte etwa am 30. Nodium ein, beiden S.J.-Pflanzen bereits in der unteren Tricbmitte etwa am 20. Nodium. Bie den P.J.-Pflanzen waren die untersten 20. Nodien immer steril, $w\"{a}hrend$ bei den S.J.-Pflanzen $h\"{a}uflgsten$ an dem ersten Nodium $\"{u}ber$ der Basis fertil waren. In allen Versuchen hat sich gezeigt, da${\beta}$ der Wachstumsabschlu${\beta}$ -(Bildung einer Terminal Knospe)-, der bei Ribes nigrum L. durch Kurztag eingeleitet wird, bei den P.J.-Pflanzen langsammer als bei den S.J.-Pflanzen erfolgt. Dies $f\"{u}hrt$ dazu, da${\beta}$ die Pflanzen der $sekund\"{a}ren$ Jugendphase auf die photokybernetischen Stimulation empfindlicher reagieren als die der $prim\"{a}ren$ Jugendphase. Alle untersuchten Versuchsdaten $f\"{u}hren$ zu dem Schlu${\beta}$, da${\beta}$ die Wurzelgibberelline $(GA_n)$ keinen Einflu${\beta}$ auf die $Jugendsterilit\"{a}t$ ($Basissterilit\"{a}t$) haben. Aus den Untersuchungen geht hervor, da${\beta}$ die induktive Ma${\beta}$nahme zur Beschleunigung der $Bl\"{u}tenknospenbildung$ $f\"{u}r$ eine $Z\"{u}chtungsselektion$ erst dann eingesetzt werden sollen, wenn die P.J.-Pflanzen mehr als 20 Nodien ausgebildet haben.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.422-422
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• 2012

In2O3 계열의 산화물 전도성 투명 전극은 최근 디스플레이, 태양전지 등 전자산업에서 중요한 소재로 전 세계적으로 많이 연구되고 있다. 또한 3.6 eV의 wide bandgap을 가짐으로서 센서 등의 반도체 소자로의 응용가능성이 매우 큰 것으로 알려져 있다. 기존의 연구는 In2O3에 SnO2, Al2O3, Ga2O3 등을 혼합하여 화합물 형태의 투명전극 소재를 개발하고, 전도성 및 투과율 등을 개선시키는데 초점이 맞춰져왔다. 최근에 들어서 나노스케일 물질의 제조 기술 개발로 낮은 차원의 In2O3 나노구조는 센서나 발광다이오드와 같은 전자기기의 제작을 위해서 연구 되었는데, 본 논문에서는 Carbon을 doping하여 p-형 반도체로의 응용 가능성을 고찰하였다. 본 논문에서는 In2O3:C 박막을 radio-frequency magnetron sputtering 방법으로 sapphire(0001) 기판위에 증착하였다. 통상적으로 ceramic target에 carbon을 혼합하여 sintering하여 제작한 ceramic target 대신, In2O3 powder와 CNT를 혼합하여 powder형태의 sputter target을 사용하였다. 박막의 증착 초기에는 매우 평평한 층구조로 성장하였고, 박막의 두께가 증가함에 따라 섬조직이 생성되기 시작하여 표면거칠기가 매우 크게 증가하였다. 박막의 두께가 500 nm 이상이 되면 나노 피라미드가 생성되는데, 이는 In2O3의 결정구조에 기인한 것으로 판단된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.323-323
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• 2014

기존의 태양전지 기술은 기술 장벽이 매우 낮고 대량 생산을 통한 단가 절감하는 구조를 가지고 있어 대규모 자본을 가진 후발 기업에게 잠식되기 쉽다. 그러나, III-V족 화합물 반도체를 이용한 집광형 고효율 태양전지는 기술 장벽이 매우 높은 기술 집약 산업이므로 독자적인 기술을 확보하게 되면 독점적인 시장을 확보 할 수 있어 미래 고부가 가치 산업으로 적합하다. 특히 III-V족 화합물 반도체 태양전지는 III족 원소(In, Ga, Al)와 V족 원소(As, P)의 조합으로 0.3 eV~2.5 eV까지 밴드갭을 가지는 다양한 박막 제조가 가능하여 다양한 흡수 대역을 가지는 태양전지 제조가 가능하기 때문에 다중 접합 태양전지 제작이 가능하다. 또한 III-V 화합물 반도체는 고온 특성이 우수하여 온도 안정성 및 신뢰성이 우수하고, 또한 집광 시 효율이 상승하는 특성이 있어 고배율 집광형 태양광 발전 시스템에 가장 적합하다. Si 태양전지의 경우 100배 이하의 집광에서 사용하나, III-V 화합물 반도체 태양전지의 경우 500~1000배 정도의 고집광이 가능하다. 이러한 특성으로 III-V 화합물 반도체 태양전지 모듈 가격을 낮출 수 있고, 따라서 Si 태양전지 시스템과 비교하여 발전 단가 면에서 경쟁력을 확보할 수 있다. III-V 화합물 반도체는 다양한 밴드갭 에너지를 가지는 박막 제조가 용이하고, 직접천이(direct bandgap) 구조를 가지고 있어 실리콘에 비해 광 흡수율이 높다. 또한 터널정션(tunnel junction)을 이용하면 광학적 손실과 전기적 소실을 최소화 하면서 다양한 밴드갭을 가지는 태양전지를 직렬 연결이 가능하여 한 번의 박막 증착 공정으로 넓은 흡수대역을 가지며 효율이 높은 다중접합 태양전지 제작이 가능하다. 이에 걸맞게 본연구에서는 화학기상증착장치(MOCVD)를 이용하여 InAsP 나노선을 코어 쉘 구조로 성장하여 태양전지를 제작하였다. P-type Dopant로는 Disilane (Si2H6)을 전구체로 사용하였다. 또한 Benzocyclobutene (BCB) 폴리머를 이용하여 Dielectric을 형성하였고 Sputtering 방법으로 증착한 ZnO을 투명 전극으로 사용하여 나노선 끝부분과 실리콘 기판에 메탈 전극을 형성하였다. 이를 통해 제작한 태양전지는 솔라시뮬레이터로 측정했을때 최고 7%에 달하는 변환효율을 나타내었다.

• Corrosion Science and Technology
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• v.23 no.2
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• pp.83-92
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• 2024

A hot-dip simulator was utilized to replicate abnormal coating buildup observed during line stops at galvanize lines, assessing the influence of processing conditions on buildup (up to 14 mm/side). Steel samples from 19 coils (comprising IF, BH, LCAK, HSLA, DP600-DP1180, Si: 0.006 - 0.8 wt%, P: 0.009 - 0.045 wt%) were examined to explore the phenomenon of heavy coating growth. It was discovered that heavy coating buildup (~3 mm/h) and rapid strip dissolution (~0.17 mm/h) in a GA or GI pot can manifest with specific combinations of steel chemistry and processing conditions. The results reveal the formation of a unique coating microstructure, characterized by a blend of bulky Zeta crystals and free Zn pockets/networks due to the "Sandlin" growth mechanism. Key variables contributing to abnormal coating growth include steel Si content, anneal temperature, dew point in heating and soaking furnaces, Zn pot temperature, Zn bath Al%, and cold-rolling reduction%. At ArcelorMittal Dofasco galvanize lines, an automatic online warning system for operators and special scheduling for incoming Si-bearing steels have been implemented, effectively preventing further heavy buildup occurrences.

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.313-317
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• 2012

We have evaluated a 1.3 ${\mu}m$ vertical-cavity surface-emitting laser (VCSEL), whose bottom mirror and central active layer were grown by metal organic chemical vapor deposition (MOCVD) and whose top mirror was covered with a dielectric coating, for 10 Gb/s data transmission over single-mode fibers (SMFs). Successful demonstration of error-free transmission of the directly modulated VCSEL signals at data rate of 10 Gb/s over a 10 km-long SMF was achieved for operating temperatures from $20^{\circ}C$ to $60^{\circ}C$ up to bit-error-rate (BER) of $10^{-12}$. The DC bias current and modulation currents are only 7 mA and 6 mA, respectively. The results indicate that the VCSEL is a good low-power consuming optical signal source for 10 GBASE Ethernet applications under controlled environments.

• Korean Journal of Materials Research
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• v.21 no.12
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• pp.639-643
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• 2011

Zinc oxide as an optoelectronic device material was studied to utilize its wide band gap of 3.37 eV and high exciton biding energy of 60 meV. Using anti-site nitrogen to generate p-type zinc oxide has shown a deep acceptor level and low solubility. To increase the nitrogen solubility in zinc oxide, group 13 elements (aluminum, gallium, and indium) was co-added to nitrogen. The effect of aluminum on nitrogen solubility in a $3{\times}3{\times}2$ zinc oxide super cell containing 72 atoms was investigated using density functional theory with hybrid functionals of Heyd, Scuseria, and Ernzerhof (HSE). Aluminum and nitrogen were substituted for zinc and oxygen sites in the super cell, respectively. The band gap of the undoped super cell was calculated to be 3.36 eV from the density of states, and was in good agreement with the experimentally obtained value. Formation energies of a nitrogen molecule and nitric oxide in the zinc oxide super cell in zinc-rich conditions were lower than those in oxygen-rich conditions. When the number of nitrogen molecules near the aluminum increased from one to four in the super cell, their formation energies decreased to approach the valence band maximum to some degree. However, the acceptor level of nitrogen in zinc oxide with the co-incorporation of aluminum was still deep.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.811-816
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• 2012

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.37-43
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• 2008

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program/erase (P/E) speed, reliability of memory device on interface trap between Si substrate and tunneling oxide and bulk trap in nitride layer were investigated using charge pumping method which has advantage of simple and versatile technique. We analyzed different SANOS memory devices that were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SANOS cell transistors with larger capture cross section and interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. The data retention was deteriorated as increasing P/E cycling number but not coincides with interface trap increasing tendency. This result once again confirmed that interface trap independence on data retention. And the result on different program method shows that HCI program method more degraded by locally trapping. So, we know as a result of experiment that analysis the SANOS Flash memory characteristic using charge pumping method reflect the device performance related to interface and bulk trap.