• Title/Summary/Keyword: Ga doped

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Electrical, optical, structural properties of GZO-Ag-GZO multilayer electrode (GZO-Ag-GZO 다층 투명 전극의 전기적, 광학적, 구조적 특성 연구)

  • Kim, Han-Ki;Park, Ho-Kyun;Choi, Kwang-Hyuk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.443-443
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    • 2008
  • 본 연구에서는 Ga-doped ZnO(GZO)-Ag-GZO 다층 투명전극을 Dual DC magnetron sputtering system을 이용 하여 유리기판 위에 상온에서 제작하여 Ag 두께에 따른 전기적, 광학적, 구조적 특성변화를 조사하였다. Hall effect measurement와 UV/Vis spectrometer로 전기적, 광학적 특성을 분석하였으며, X-ray diffraction(XRD)와FE-SEM분석을 통해 결정성과 표면 특성을 조사하였다. FE-SEM 분석결과 island 형태에서 continuous layer로 박막의 형상이 바뀌면서 다층 투명전극의 전기적, 광학적 특성에 영향을 미치는 것을 알 수 있었다. 본 실험에서 Ag 두께 12 nm에서 가장 최적화되어 유리기판위에 상온에서 증착되었음에도 불구하고 5.5××105Ω-cm, 6Ω/sq. 의 매우 낮은 면저항과 비저항을 각각 나타내었고 550 nm 파장에서 87 % 의 높은 광 투과도를 나타내었다. 또한 두께 12 nm의 Ag가 삽입된 다층 투명전극을 polyethylene terephthalate (PET) 기판위에 성막하여 Bending test를 실시하여 0.1% 이하의 매우 낮은 저항변화를 확인함으로써 플렉시블 기반의 디스플레이나 태양전지의 투명 전극으로서의 응용 가능성을 확인하였고 마지막으로 최적화된 다층 투명전극을 유기물태양전지의 애노드에 적용하여 기존 ITO 애노드를 대체할 수 있는 투명전극으로서의 가능성을 제시하였다.

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Low-Temperature Deposition of Ga-Doped ZnO Films for Transparent Electrodes by Pulsed DC Magnetron Sputtering

  • Cheon, Dongkeun;Ahn, Kyung-Jun;Lee, Woong
    • Korean Journal of Materials Research
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    • v.27 no.2
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    • pp.69-75
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    • 2017
  • To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 to 500 nm and from room temperature to 250C, respectively. Electrical properties of the GZO films initially improved with increase of temperature to 150C, but deteriorated subsequently with further increase of the temperature. At lower temperatures, the electrical properties improved with increasing thickness; however, at higher temperatures, increasing thickness resulted in deteriorated electrical properties. Such changes in electrical properties were correlated to the microstructural evolution, which is dependent on the deposition temperature and the film thickness. While the GZO films had c-axis preferred orientation due to preferred nucleation, structural disordering with increasing deposition temperature and film thickness promoted grain growth with a-axis orientation. Consequently, it was possible to obtain a good electrical property at relatively low deposition temperature with small thickness.

Structural, Optical, and Electrical Properties of IGZO Thin Film Sputtered with Various RF Powers (RF 파워 변화에 따른 IGZO 박막의 구조적, 광학적, 전기적 특성)

  • Jin, Chang-Hyun;Kim, Hong-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.10
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    • pp.620-624
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    • 2015
  • We have studied structural, optical and electrical properties of In-Ga-doped ZnO (IGZO) thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 30, 50, 70, and 90 W respectively. All of the IGZO thin films transmittance in the visible range (400 nm ~ 800 nm) was above 83%. XRD analysis showed the IGZO thin films amorphous structure of the thin films without any peak. And also IGZO thin film have low resistivity (1.99×103Ωcm), high carrier concentration (6.4×1020cm3), and mobility (10.3cm2V1s1). By the studies we found that IGZO transparent thin film can be used as optoelectronic material and introduced application possibility for future electronic devices.

Processing optimization of Ga-doped ZnO for transparent electrode application using DOE (실험계획법을 이용한 GZO 투명전극 성장의 공정 최적화)

  • Lee, Sang-Gyu;Chang, Seong-Pil;Son, Chang-Wan;Leem, Jae-Hyeon;Song, Yong-Won;Lee, Sang-Yeol;Han, Seung-Soo
    • Proceedings of the KIEE Conference
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    • 2007.11a
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    • pp.108-109
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    • 2007
  • Microstructure and electrical properties of Ga-doped ZnO (GZO) films grown on Al2O3 templates by Pulsed Laser Deposition (PLD) are investigated utilizing X-ray diffraction method and Hall measurement, respectively. In order to determine the optimized operating condition of the PLD, statistical design of experiment (DOE) is employed. It provides the systematic and efficient methodology for characterization and modeling of PLD processing with a relatively small number of experiments. The most optimized recipe of the process factors is obtained by response optimizer in Minitab.

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Thickness Dependence of GZO Gas Sensing Films Deposited on LTCC Substrates (LTCC 기판상에 증착한 GZO 가스 센싱 박막의 두께 의존 특성 연구)

  • Hwang, Hyun Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.3
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    • pp.215-218
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    • 2011
  • A novel design of gas sensor using Ga-doped ZnO (GZO) thin films which are deposited on low temperature co-fired ceramic (LTCC) substrates is presented. The LTCC substrates with thickness of 400 μm are fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The GZO thin films with different thickness are deposited on LTCC substrates, by RF magnetron sputtering method. The microstructure and sensing properties of GZO gas sensing films are analyzed as a function of the film thickness. The films are well crystallized in the hexagonal (wurzite) structure with increasing thickness. The maximum sensitivity of 3.49 is obtained at 100 nm film thickness and the fastest 90% response time of 27.2 sec is obtained at 50 nm film thickness for the operating temperature of 400C to the NO2 gas.

Dependence of Doping on Indium Content in InGaN/GaN Multiple Quantum Wells for Effective Water Splitting (다양한 In 조성을 가진 InGaN/GaN Multi Quantum Well의 효과적인 광전기화학적 물분해)

  • Bae, Hyojung;Bang, Seung Wan;Ju, Jin-Woo;Ha, Jun-Seok
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.3
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    • pp.1-5
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    • 2018
  • In this study, the effects of indium (In) doping in InGaN/GaN multi quantum well (MQW) on photoelectrochemical (PEC) properties were investigated. Each quantum well (QW) layer with controlled In content were grown on sapphire substrate. Before growth of MQW, GaN growth consisted of various stages in the following order: buffer GaN growth, undoped GaN growth, and Si-doped n-type GaN growth. Absorbance of InGaN/GaN MQW having different In composition was higher than that of the InGaN/GaN MQW having a constant In composition. It indicates that InGaN layer having different In composition absorbs light having a broad spectrum energy. These results are in agreement with those in photoluminescence (PL). After evaluation of PEC properties, it demonstrated that InGaN/GaN MQW having different In composition was improved InGaN/GaN MQW having constant In composition in PEC water splitting ability.

Effect of Mg2+ co-doping on luminescent properties of ZnGa2O4:Mn2+

  • Singh, Binod Kumar;Bartwal, Kunwar Singh;Ryu, Ho-Jin
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.4
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    • pp.29-32
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    • 2007
  • Zinc gallate, ZnGa2O4:Mn2+ co-doped with different concentrations of Mg2+ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition Zn0.990Mg0.005Ga2O4:Mn0.005 shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The Mg2+ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.

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Al, Ga, In이 도핑된 ZnO 기반의 투명 전도막 제작

  • Kim, Gyeong-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.138-138
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    • 2009
  • Al, Ga and In doped ZnO thin film were prepared by faing targets sputtering as a function of oxygen gas contents at R.T. Base pressure was 2×106torr, and working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivities of AZO, GZO and IZO thin film were 6.5times104[Ωcm],5.5×104[Ωcm] and 4.29×104[Ωcm]. The average transmittance of over 80% was seen in the visible range.

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Material properties of In0.53Ga0.47As0.52Al0.48As MQWs grown on InP substrates by low-temperature molecular beam epitaxy (InP 기판위에 저온 분자선 에피탁시로 성장된 In0.53Ga0.47As0.52Al0.48As 다중 양자 우물의 특성 평가)

  • 이종수;최우영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.5
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    • pp.80-86
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    • 1998
  • Material characterizations were performed for In$_{0.53}Ga_{0.47}As/In0.52Al0.48/As MQWs grown on InP substrates by low-temperature modlecular beam epitaxy. MQW samples were grwon at different temperatures of 200.deg.C, 300.deg. C and 500.deg. C, and doped with 1018 cm3 Be. High resolution x-ray diffraction measurement showed the change in crystal qualities according to growth temperature. Hall measurement showed the changes in carrier concentrations and mobilities for different growth temperatures. The optical properties of MQW samples were investigated with photoluminescence and fourier-transform infrared spectroscopy measurements.

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First-principles Study on Magnetism of Cu in GaN

  • Kang, Byung-Sub;Heo, Chul-Min;Lyu, Kwang-Kwyun;Yu, Seong-Cho
    • Journal of Magnetics
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    • v.14 no.3
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    • pp.114-116
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    • 2009
  • The electronic properties of Cu or Pd-doped GaN at several concentrations are examined using the full-potential linear muffin-tin orbital method. For (Cu0.055Ga0.945)N, the model reveals a magnetic moment of 1.47μB per supercell. The range of concentrations that are spin-polarized should be restricted within narrow limits. A paramagnetic to ferromagnetic phase transition is found to occur at a Cu concentration of 5.55%.