Al, Ga, In이 도핑된 ZnO 기반의 투명 전도막 제작

Al, Ga and In doped ZnO thin film were prepared by faing targets sputtering as a function of oxygen gas contents at R.T. Base pressure was $2{\times}10^{-6}torr$, and working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivities of AZO, GZO and IZO thin film were $6.5{times}10^{-4}[{\Omega}-cm],5.5{\times}10^{-4}[{\Omega}-cm]$ and $4.29{\times}10^{-4}[{\Omega}-cm]$. The average transmittance of over 80% was seen in the visible range.