• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.622-634
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• 2013

The circuit level implementation of nanoscale Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET has been investigated and compared with the other conventional devices i.e. Insulated Shallow Extension (ISE) and Silicon On Nothing (SON) using the ATLAS 3D device simulator. It can be observed that ISE-SON based inverter shows better performance in terms of Voltage Transfer Characteristics, noise margin, switching current, inverter gain and propagation delay. The reliability issues of the various devices in terms of supply voltage, temperature and channel length variation has also been studied in the present work. Logic circuits (such as NAND and NOR gate) and ring oscillator are also implemented using different architectures to illustrate the capabilities of ISE-SON architecture for high speed logic circuits as compared to other devices. Results also illustrates that ISE-SON is much more temperature resistant than SON and ISE MOSFET. Hence, ISE-SON enables more aggressive device scaling for low-voltage applications.

• Journal of IKEEE
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• v.24 no.2
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• pp.598-603
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• 2020

In this paper present a Low Drop-Out(LDO) regulator that improves load transient characteristics due to the push-pull pass transistor structure is proposed. Improved load over the existing LDO regulator by improving the overshoot and undershoot entering the voltage line by adding the proposed push-pull circuit between the output stage of the error amplifier inside the LDO regulator and the gate stage of the pass transistor and the push-pull circuit at the output stage. It has a delta voltage value of transient characteristics. The proposed LDO structure was analyzed in Samsung 0.13um process using Cadence's Virtuoso, Spectre simulator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.486-489
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• 2015

Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.6
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• pp.1533-1545
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• 1996

In this paper, the design and implementation of echo canceller with new variable step size algorithm is discussed. The method used in the new algorithm is to periodically adopt the test function which helps an optimal coefficient tracking. This algorithm outperforms LMS and VS algorithms in convergence speed and steady state error. As the period of test function is decreased, the speed of convergence is improved, but the number of calculation is increased, then the trade off between these parameters must be considered. Simulation results show new algorithm outperforms LMS and VS algorithms in convergence rate. For the design of hardware, circuit is designed with VHDL, and synthesized with Act1 withc is a FPGA library of ActelTM in use of synovation of InterGraph$^{TM}$. Verification of the synthesized circuit is carried out with simulator DLAB. The circuit based on the algorithm which is suggested in this paper calculated 7 radix places of inary number. A simulation data for the verification is based on the data of algorithm simulation. When the same input data is applied to the both simulation, output results of circuit simulation had slight difference in compare with that of algorithm simulation. The number of used gate is about 5,500 and We have 5.53MHz in maximum frequency.y.

• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.1567-1570
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• 2002

This paper deals with FPGA(Field Programmable Gate Array) implementation of the AAC(Advanced Audio Coding) decoder. On modern computer culture, according to the high quality data is required in multimedia systems area such as CD, DAT(Digital Audio Tape) and modem. So, the technology of data compression far data transmission is necessity now. MPEG(Moving Picture Experts Group) would be a standard of those technology. MPEG-2 AAC is the availableness and ITU-R advanced coding scheme far high quality audio coding. This MPEG-2 AAC audio standard allows ITU-R 'indistinguishable' quality according to at data rates of 320 Kbit/sec for five full-bandwidth channel audio signals. The compression ratio is around a factor of 1.4 better compared to MPEG Layer-III, it gets the same quality at 70％ of the titrate. In this paper, for a real time processing MPEG2 AAC decoding, it is implemented on FPGA chip. The architecture designed is composed of general DSP(Digital Signal Processor). And the Processor designed is coded using VHDL language. The verification is operated with the simulator of C language programmed and ECAD tool.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• Journal of Electrical Engineering and information Science
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• v.2 no.5
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• pp.17-26
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• 1997

Interconnect characterization on a wafer level was performed. Test patterns for single, two-coupled, and triple-coupled lines ere designed by using 0.5$\mu\textrm{m}$ CMOS process. Then interconnect capacitances and resistances were experimentally extracted by using tow port network measurements, Particularly to eliminate parasitic effects, the Y-parameter de-embedding was performed with specially designed de-embedding patterns. Also, for the purpose of comparisons, capacitance matrices were calculated by using the existing CAD model and field-solver-based commercial simulator, METAL and MEDICI. This work experimentally verifies that existing CAD models or parameter extraction may have large deviation from real values. The signal transient simulation with the experimental data and other methodologies such as field-solver-based simulation and existing model was performed. as expected, the significantly affect on the signal delay and crosstalk. The signal delay due to interconnects dominates the sub-micron-based a gate delay (e.g., inverter). Particularly, coupling capacitance deviation is so large (about more than 45% in the worst case) that signal integrity cannot e guaranteed with the existing methodologies. The characterization methodologies of this paper can be very usefully employed for the signal integrity verification or he electrical design rule establishments of IC interconnects in the industry.

• Journal of Electrical Engineering and Technology
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• v.7 no.2
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• pp.236-239
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• 2012

In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the $SiO_2$/SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.

• Journal of the Korean Society of Systems Engineering
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• v.14 no.2
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• pp.41-48
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• 2018

This paper describes the systems engineering development process for the Departure from Nucleate Boiling Ratio (DNBR) algorithm using FPGA. Current Core Protection Calculator System (CPCS) requirement and DNBR logic are analyzed in the reverse engineering phase and the new FPGA based DNBR algorithm is designed in the re-engineering phase. FPGA based DNBR algorithm is developed by VHSIC Hardware Description Language (VHDL) in the implementation phase and VHDL DNBR software is verified in the software Verification & Validation phase. Test cases are developed to perform the software module test for VHDL software modules. The APR 1400 simulator is used to collect the inputs data in 100%, 75%, and 50% reactor power condition. Test input signals are injected to the software modules following test case tables and output signals are compared with the expected test value. Minimum DNBR value from developed DNBR algorithm is validated by KEPCO E&C CPCS development facility. This paper summarizes the process to develop the FPGA-based DNBR calculation algorithm using systems engineering approach.

• Nuclear Engineering and Technology
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• v.53 no.4
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• pp.1167-1175
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• 2021

The process of automation and monitoring in industrial control system involves the use of many types of sensors. A programmable logic controller plays an important role in the automation of the different processes in the power plant system. The major control units are boiler for temperature and pressure, turbine for speed of motor, generator for voltage, conveyer belt for fuel. The power plant units are controlled using microcontrollers and PLCs, but FPGA can be the feasible solution. The paper focused on the design and simulation of hardware chip to monitor boiler, turbine, generator and conveyer belt. The hardware chip of the plant is designed in Xilinx Vivado Simulator 17.4 software using VHDL programming. The methodology includes VHDL code design, simulation, verification and testing on Virtex-5 FPGA hardware. The system has four independent buzzers used to indicate the status of the boiler, generator, turbine motor and conveyer belt in on/off conditions respectively. The GSM is used to display corresponding message on the mobile to know the status of the device in on/off condition. The system is very much helpful for the industries working on plant automation with FPGA hardware integration.