• Title/Summary/Keyword: GAP-Sensor

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Modification of Thin Film Friction and Wear Models with Effective Hardness

  • Kim, Chang-Lae;Kim, Hae-Jin
    • Tribology and Lubricants
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    • v.36 no.6
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    • pp.320-323
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    • 2020
  • Thin film coatings are commonly exploited to minimize wear and optimize the frictional behavior of various precision mechanical systems. The enhancement of thin film durability is directly related to the performance maximization of the system. Therefore, a fine approach to analyze the thin film wear behavior is required. Archard's equation is a representative and well-developed law that defines the wear coefficient, which is the probability of creating wear particles. A ploughing model is a commonly used model to determine the friction force during the abrasive contact. The equations demonstrate that the friction force and wear coefficient are inversely proportional to the hardness of the material. In this study, Archard's equation and ploughing models are modified with an effective hardness to minimize the gap between the experimental and numerical results. It is noted that the effective hardness is the hardness variation with respect to the penetration depth owing to the substrate effect. The nanoindentation method is utilized to characterize the effective hardness of Cu film. The wear coefficient value considering the effective hardness is more than three times higher than that without considering the effective hardness. The friction force predicted with the effective hardness agreed better with the results obtained directly from the friction force detecting sensor. This outcome is expected to improve the accuracy of friction and wear amount predictions.

Tightness Evaluation of Smart Sportswear Using 3D Virtual Clothing (3D 가상착의를 이용한 스마트 스포츠웨어의 밀착성 평가)

  • Soyoung Kim;Heeran Lee
    • Journal of the Korean Society of Clothing and Textiles
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    • v.47 no.1
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    • pp.123-136
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    • 2023
  • To develop smart sportswear capable of measuring biometric data, we created a close-fitting pattern using two- and three-dimensional (2D and 3D, respectively) methods. After 3D virtual fitting, the tightness of each pattern was evaluated using image processing of contact points, mesh deviation, and cross-sectional shapes. In contact-point analysis, the 3D pattern showed high rates of contact with the body (84.6% and 93.1% for shirts and pants, respectively). Compared with the 2D pattern, the 3D pattern demonstrated closer contact at the lower chest, upper arm, and thigh regions, where electrocardiography and electromyography were primarily carried out. The overall average gap was also lower in the 3D pattern (5.27 and 4.66 mm in shirts and pants, respectively). In the underbust, waist, thigh circumference, and mid-thigh circumference, the cross-section distance between clothing and body was showed a statistically significant difference and evenly distributed in the 3D pattern, exhibiting more closeness. The tightness and fit of the 3D smart sportswear sensor pattern were successfully evaluated. We believe that this study is critical, as it facilitates the comparison of different patterns through visualization and digitization through 3D virtual fitting.

Effect of Thermal Annealing for MgGa2Se4 Single Crystal Thin Film Grown by Hot Wall Epitaxy (뜨거운 곁쌓기 법에 의해 성장된 MgGa2Se4 단결정 박막의 열처리 효과)

  • Bang, Jinju;Kim, Hyejeong;Park, Hwangseuk;Kang, Jongwuk;Hong, Kwangjoon
    • Journal of Sensor Science and Technology
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    • v.23 no.1
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    • pp.51-57
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    • 2014
  • The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

Photocurrent Study on the Splitting of the Valence Band and Growth of BaIn2Se4 epilayers by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 BaIn2Se4 에피레어 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Jeong, Junwoo;Lee, Kijeong;Jeong, Kyunga;Hong, Kwangjoon
    • Journal of Sensor Science and Technology
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    • v.23 no.2
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    • pp.134-141
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    • 2014
  • A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

Growth and Optical Conductivity Properties for BaAl2Se4 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 BaAl2Se4 단결정 박막 성장과 광전도 특성)

  • Jeong, Junwoo;Lee, Kijung;Hong, Kwangjoon
    • Journal of Sensor Science and Technology
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    • v.24 no.6
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    • pp.404-411
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    • 2015
  • A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

Study on Developing Instrument System for Measuring Action time of K4 Grenade Machine Gun for Improving Quality Assurance on 40mm High Velocity Grenade (40mm 고속유탄의 품질보증 향상을 위한 K4 기관총의 Action Time 계측시스템 개발에 관한 연구)

  • Hong, Sung-Kook;Shin, Jun-Goo;Jeon, Hye-Jin;Kim, Yong-Hwa;Ju, Jin-Chun;Kwon, In-Gyu
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.7
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    • pp.4828-4834
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    • 2015
  • From the moment that a firing pin triggers the detonator to the moment that a grenade leaves a barrel is called Action Time. Since a loading and percussion of 40mm grenade happens simultaneously, action time should be within a certain time in order to prevent a Jamming malfunction. Previously, unreliable action time device of 40mm grenade made it difficult to improve quality assurance of K4 Grenade Machine Gun. Here, various sensors were compared and a special device was designed to seek an accurate measurement on action time. In this device, the gap between a signal from an optical sensor in Firing Pin and that from Eddy current probe in the barrel was recorded and data were sent to a computer in real time. Confirming if action time is within the criteria, it is expected that action time plays an important role in quality assurance on 40mm grenade.

Enhancement of PLED lifetime using thin film passivation with amorphous Mg-Zn-F

  • Kang, Byoung-Ho;Kim, Do-Eok;Kim, Jae-Hyun;Seo, Jun-Seon;Kim, Hak-Rin;Lee, Hyeong-Rag;Kwon, Dae-Hyuk;Kang, Shin-Won
    • Journal of Information Display
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    • v.11 no.1
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    • pp.8-11
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    • 2010
  • In this study, a new thin films passivation technique using Zn with high electronegativity and $MgF_2$, a fluorine material with better optical transmittance than the sealing film materials that have thus far been reported was proposed. Targets with various ratios of $MgF_2$ to Zn (5:5, 4:6 and 3:7) were fabricated to control the amount of Zn in the passivation films. The Mg-Zn-F films were deposited onto the substrates and Zn was located in the gap between the lattices of $MgF_2$ without chemical metathesis in the Mg-Zn-F films. The thickness and optical transmittance of the deposited passivation films were approximately 200 nm and 80%, respectively. It was confirmed via electron dispersive spectroscopy (EDS) analysis that the Zn content of the film that was sputtered using a 4:6 ratio target was 9.84 wt%. The Zn contents of the films made from the 5:5 and 3:7 ratio targets were 2.07 and 5.01 wt%, respectively. The water vapor transmission rate (WVTR) was determined to be $38^{\circ}C$, RH 90-100%. The WVTR of the Mg-Zn-F film that was deposited with a 4:6 ratio target nearly reached the limit of the equipment, $1\times10^{-3}\;gm^2{\cdot}day$. As the Zn portion increased, the packing density also increased, and it was found that the passivation films effectively prevented the permeation by either oxygen or water vapor. To measure the characteristics of gas barrier, the film was applied to the emitting device to evaluate their lifetime. The lifetime of the applied device with passivation was increased to 25 times that of the PLED device, which was non-passivated.

A Study on Improvement of Energy Efficiency for LEACH Protocol in WSN (WSN에서 LEACH 프로토콜의 에너지 효율 향상에 관한 연구)

  • Lee, Won-Seok;Ahn, Tae-Won;Song, ChangYoung
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.3
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    • pp.213-220
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    • 2015
  • Wireless sensor network(WSN) is made up of a lot of battery operated inexpensive sensors that, once deployed, can not be replaced. Therefore, energy efficiency of WSN is essential. Among the methods for energy efficiency of the network, clustering algorithms, which divide a WSN into multiple smaller clusters and separate all sensors into cluster heads and their associated member nodes, are very energy efficient routing technique. The first cluster-based routing protocol, LEACH, randomly elects the cluster heads in accordance with the probability. However, if the distribution of selected cluster heads is not good, uniform energy consumption of cluster heads is not guaranteed and it is possible to decrease the number of active nodes. Here we propose a new routing scheme that, by comparing the remaining energy of all nodes in a cluster, selects the maximum remaining energy node as a cluster head. Because of decrease in energy gap of nodes, the node that was a cluster head operates as a member node much over. As a result, the network lifespan is increased and more data arrives at base station.

Development of a Numerical Model for the Rapidly Increasing Heat Release Rate Period During Fires (Logistic function Curve, Inversed Logistic Function Curve) (화재시 열방출 급상승 구간의 수치모형 개발에 관한 연구 (로지스틱 함수 및 역함수 곡선))

  • Kim, Jong-Hee;Song, Jun-Ho;Kim, Gun-Woo;Kweon, Oh-Sang;Yoon, Myong-O
    • Fire Science and Engineering
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    • v.33 no.6
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    • pp.20-27
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    • 2019
  • In this study, a new function with higher accuracy for fire heat release rate prediction was developed. The 'αt2' curve, which is the major exponential function currently used for fire engineering calculations, must be improved to minimize the prediction gap that causes fire system engineering inefficiency and lower cost-effectiveness. The newly developed prediction function was designed to cover the initial fire stage that features rapid growth based on logistic function theory, which has a more logical background and graphical similarity compared to conventional exponential function methods for 'αt2'. The new function developed in this study showed apparently higher prediction accuracy over wider range of fire growth durations. With the progress of fire growth pattern studies, the results presented herein will contribute towards more effective fire protection engineering.

Cell-SELEX Based Identification of an RNA Aptamer for Escherichia coli and Its Use in Various Detection Formats

  • Dua, Pooja;Ren, Shuo;Lee, Sang Wook;Kim, Joon-Ki;Shin, Hye-su;Jeong, OK-Chan;Kim, Soyoun;Lee, Dong-Ki
    • Molecules and Cells
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    • v.39 no.11
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    • pp.807-813
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    • 2016
  • Escherichia coli are important indicator organisms, used routinely for the monitoring of water and food safety. For quick, sensitive and real-time detection of E. coli we developed a 2'F modified RNA aptamer Ec3, by Cell-SELEX. The 31 nucleotide truncated Ec3 demonstrated improved binding and low nano-molar affinity to E. coli. The aptamer developed by us out-performs the commercial antibody and aptamer used for E. coli detection. Ec3(31) aptamer based E. coli detection was done using three different detection formats and the assay sensitivities were determined. Conventional Ec3(31)-biotin-streptavidin magnetic separation could detect E. coli with a limit of detection of $1.3{\times}10^6CFU/ml$. Although, optical analytic technique, biolayer interferometry, did not improve the sensitivity of detection for whole cells, a very significant improvement in the detection was seen with the E. coli cell lysate ($5{\times}10^4CFU/ml$). Finally we developed Electrochemical Impedance Spectroscopy (EIS) gap capacitance biosensor that has detection limits of $2{\times}10^4CFU/mL$ of E. coli cells, without any labeling and signal amplification techniques. We believe that our developed method can step towards more complex and real sample application.