• Applied Science and Convergence Technology
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• v.27 no.3
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• pp.56-60
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• 2018

The optical properties of the digital-alloy $(In_{0.53}Ga_{0.47}As)_{1-z}/(In_{0.52}Al_{0.48}As)_z$ grown by molecular beam epitaxy as a function of composition z (z = 0.4, 0.6, and 0.8) have been studied using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. As the composition z increases from 0.4 to 0.8, the PL peak energy of the digital-alloy $In(Ga_{1-z}Al_z)As$ is blueshifted, which is explained by the enhanced quantization energy due to the reduced well width. The decrease in the PL intensity and the broaden FWHM with increasing z are interpreted as being due to the increased Al contents in the digital-alloy $In(Ga_{1-z}Al_z)As$ because of the intermixing of Ga and Al in interface of InGaAs well and InAlAs barrier. The PL decay time at 10 K decreases with increasing z, which can be explained by the easier carrier escape from InGaAs wells due to the enhanced quantized energies because of the decreased InGaAs well width as z increases. The emission energy and luminescence properties of the digitalalloy $(InGaAs)_{1-z}/(InAlAs)_z$ can be controlled by adjusting composition z.

• Proceedings of the Korea Institute of Convergence Signal Processing
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• 2005.11a
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• pp.357-360
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• 2005

유전자 알고리즘(Genetic Algorithm, GA)은 자연적 진화과정에서 생존 경쟁 측면의 가장 적합한 메커니즘이다. GA를 소프트웨어로 수행하는데 큰 지연시간은 필수적이기 때문에 하드웨어 설계를 이용하여 알고리즘 실행 속도를 증가시키기 위한 많은 연구가 진행되어 왔다. 본 논문에서는 염색체의 임의의 유전인자를 기준으로 입력 받은 염색체에 대하여 GA 연산을 수행하는 유전 연산자를 설계한다. 설계된 디자인을 ARM 코어와 PLD로 구성된 Altera사의 Excalibur칩에 구현하여 동작을 검증하였다.

• ETRI Journal
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• v.30 no.3
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• pp.480-482
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• 2008

A novel InGaAsP/InP buried-ridge waveguide laser diode structure is proposed and demonstrated for use as a single-mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single-mode operation without kinks or beam-steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 ${\mu}m$ up to an injection current of 500 mA.

• ETRI Journal
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• v.43 no.5
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• pp.916-922
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• 2021

We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.

• Journal of the Institute of Convergence Signal Processing
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• v.13 no.4
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• pp.207-210
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• 2012

Genetic algorithms(GA) are well known and very popular stochastic optimization algorithm. Although, GA is very powerful method to find the global optimum, it has some drawbacks, for example, premature convergence to local optima, slow convergence speed to global optimum. To enhance the performance of GA, this paper proposes an adaptive partitioning-based genetic algorithm. The partitioning method, which enables GA to find a solution very effectively, adaptively divides the search space into promising sub-spaces to reduce the complexity of optimization. This partitioning method is more effective as the complexity of the search space is increasing. The validity of the proposed method is confirmed by applying it to several bench mark test function examples and the optimization of fuzzy controller for the control of an inverted pendulum.

• International Journal of Control, Automation, and Systems
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• v.3 no.2
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• pp.236-243
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• 2005

This paper presents a new stochastic approach for solving combinatorial optimization problems by using a new selection method, i.e. SA-selection, in genetic algorithm (GA). This approach combines GA with simulated annealing (SA) to improve the performance of GA. GA and SA have complementary strengths and weaknesses. While GA explores the search space by means of population of search points, it suffers from poor convergence properties. SA, by contrast, has good convergence properties, but it cannot explore the search space by means of population. However, SA does employ a completely local selection strategy where the current candidate and the new modification are evaluated and compared. To verify the effectiveness of the proposed method, the optimization of a fuzzy controller for balancing an inverted pendulum on a cart is considered.

• ETRI Journal
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• v.34 no.6
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• pp.966-969
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• 2012

From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.194-200
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• 2006

Self-assembled InAs/InAl(Ga)As quantum dots (QDs) were grown on InP substrates by a molecular-beam epiaxy, and their structural and optical properties were investigated by atomic force microscopy (AFM), transmission electron microscopy (TEM), and room-temperature photoluminescence (PL). AFM images indicated that the InAs quantum structures showed various shapes such as quantum dashes, asymmetric and symmetric QDs mainly caused by the initial surface conditions of InAl(Ga)As with the intrinsic phase separation. For the buried InAs QDs in an InAlGaAs matrix, the average lateral size and height of QDs were 23 and 2 nm, respectively. By changing the growth conditions for the QD samples, the emission wavelength of $1.55{\mu}m$ was obtained, which is one of the wavelength windows for fiber optic communications.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.1-5
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• 2018

In this study, the effects of indium (In) doping in InGaN/GaN multi quantum well (MQW) on photoelectrochemical (PEC) properties were investigated. Each quantum well (QW) layer with controlled In content were grown on sapphire substrate. Before growth of MQW, GaN growth consisted of various stages in the following order: buffer GaN growth, undoped GaN growth, and Si-doped n-type GaN growth. Absorbance of InGaN/GaN MQW having different In composition was higher than that of the InGaN/GaN MQW having a constant In composition. It indicates that InGaN layer having different In composition absorbs light having a broad spectrum energy. These results are in agreement with those in photoluminescence (PL). After evaluation of PEC properties, it demonstrated that InGaN/GaN MQW having different In composition was improved InGaN/GaN MQW having constant In composition in PEC water splitting ability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.1-6
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• 2017

Tungsten carbide (WC) has been suggested as a new buffer layer for the GaN-on-Si technology. We have investigated and optimized the sputtering condition of WC layer on the Si-substrate. We confirmed the suppression of the Si melt-back phenomenon. In addition, surface energy of WC/Si layer was measured to confirm the possibility as a buffer layer for GaN growth. We found that the surface energy(${\gamma}=82.46mJ/cm^2$) of WC layer is very similar to that of sapphire substrate(${\gamma}=82.71mJ/cm^2$). We grow GaN layer on the WC buffer by using gas-source MBE, and confirm that it is available to grow a single crystalline GaN layer.