• 대한수의학회지
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• 제31권3호
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• pp.241-251
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• 1991

In order to investigate the effect of Panax ginseng extract and it's degree in mucociliary change of mice nasal septum epithelia exposured to sulfur dioxide, 96 ICR male mice were used. They were at first divided the 4th week, the 8th week or the 16th week groups according to the age after birth and 6 hour or 12 hour groups according to the $SO_2$ gas exposured hour in a day, and at control, 50mg, 100mg and 200mg injection groups according to the dosage of the freeze-drying powder of the ginseng extract which was injected into the mouse peritoneal cavities in the condition of the solution solved with physiological saline solution. Each subgroups which were divided finaly included 4 male mice. The histological tissue sections for observation were made from nasal septum, posterior nasal orfice and trachea. The results obtained by experiments were summarized as followings. 1. The loss of the nasal mucosa epithelial cilia of the mouse exponsure to the $SO_2$ gas after ginseng extract injection was apparently diminish eompare to those exposured only $SO_2$ gas without pretreatment of ginseng extract (p<0.01). 2. The inhibition effect for the loss of nasal mucocilia according to the ginseng extract dosages not found in this research (p>0.05). 3. There were differences in the loss of nasal mucosa cilia according to the $SO_2$ gas exposure time between the control group and ginseng extract pretreatment group (p<0.01). 4. According to the increase of the postnatal time, there were remarkable differences between the control group and the ginseng extract pretreatment groups in the loss of nasal mucosa cilia (p<0.01). 5. Ciliary changes of the posterior nasal orifice and trachea according to the $SO_2$ gas exposure time, mice age and ginseng dosages, were not dearly observed in this light microscopical observation.

• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.250-253
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• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

• 동의신경정신과학회지
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• 제30권3호
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• pp.153-164
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• 2019

Objectives: The purpose of this study was to examine the correlation between CSEI (The Core Seven-Emotions Inventory) and MMPI-2 (Minnesota Multiphasic Personality Inventory-2). Methods: We analyzed the correlation between students' demographic characteristics, blood type, MMPI-2, and CSEI using the SPSS (Statistical Package for the Social Science) 24.0. Descriptive Statistical Analysis, independent t-test, analysis of variance (ANOVA), subsequent analysis duncan (post hoc multiple comparison), and correlation analysis were conducted. Results: 1. According to the demographic characteristics of 91 participants in this study: 60 males (65.9%), 88 unmarried (96.7%), 58 without religion (63.7%), 54 who have experienced stress in the last three months (59.4%), and 82 in their 20s (90.1%) comprised the majority. 2. As a result of verifying correlation by subfactors of CSEI, Hui (喜) showed statistically significant negative correlation with U (憂), Bi (悲), and Gong (恐). Six emotions except Hui (喜) showed statistically significant positive correlation, except for the relationship between U (憂) and Kyeong (驚). 3. Hui (喜) of CSEI had negative correlation with eight factors of MMPI-2 Clinical Scales except Pa (Paranoia) and Ma (Hypomania), whereas Bi (悲) had positive correlation with nine factors of MMPI-2 clinical scales except Mf (Masculinity-Femininity). Sa (思), Bi (悲), and Gong (恐) had similar tendency of positive correlation with six factors of MMPI-2 Restructured Clinical Scales. Conclusions: Based on the above results, we concluded that CSEI's sub factors had consistent correlations with MMPI-2. Thus, CSEI could contribute to psychiatry clinical use.

• 한국전자파학회논문지
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• 제17권7호
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• pp.659-664
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• 2006

본 논문에서는 $0.12{\mu}m$ 게이트 전극을 가진 metamorphic InAIAs/InGaAs high electron-mobility transistors (mHEMT)를 이용하여 제작된 60 GHz push-push 발진기의 특성을 고찰하였다. 전극 길이가 $0.12{\mu}m$ 인 mHEMT는 700 mA/mm의 최대 전류, 600 mS/mm의 최대 전달정수, 170 GHz $f_T$, 그리고 300 GHz 이상의 $f_{MAX}$ 등 우수한 특성을 나타내었다. 두 개의 $6{\times}50{\mu}m$ 크기를 가지는 mHEMT 를 이용하여 제작된 발진기는 59.5 GHz 에서 6.3 dBm의 출력 전력과 -35 dBc 이상의 기저 주파수 억압도를 나타내었다. 페이즈 노이즈 (phase noise)는 발진 주파수의 1 MHz 오프셋에서 -81.2 dBc/Hz 의 특성을 나타내었다. 본 연구 결과는 60 GHz 대역에서 mHEMT를 이용하여 제작된 push-push 발진기로는 최대 출력을 나타낸 결과이며, 이 연구 결과는 상용화와 저가격에 InP HEMT 보다 유리한 mHEMT를 이용하여 고출력 발진기 특성을 얻을 수 있음을 보여준다.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.449-453
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• 2010

In this paper, the electrical characteristics of Fin-type SONOS(silicon-oxide-nitride-oxide-silicon) flash memory device with different trapping layers are analyzed in depth. Two kinds of trapping layers i.e., silicon nitride($Si_3N_4$) and hafnium oxide($HfO_2$) are applied. Compared to the conventional Fin-type SONOS device using the $Si_3N_4$ trapping layer, the Fin-type SOHOS(silicon-oxide-high-k-oxide-silicon) device using the $HfO_2$ trapping layer shows superior program/erase speed. However, the data retention properties in SOHOS device are worse than the SONOS flash memory device. Degraded data retention in the SOHOS device may be attributed to the tunneling leakage current induced by interface trap states, which are supported by the subthreshold slope and low frequency noise characteristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.100-104
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• 2012

Fin-type SONOS (silicon-oxide-nitride-oxide-silicon) flash memory has emerged as novel devices having superior controls over short channel effects(SCE) than the conventional SONOS flash memory devices. However despite these advantages, these also exhibit undesirable characteristics such as corner effect. Usually, the corner effect deteriorates the performance by increasing the leakage current. In this paper, the corner effect of fin-type SONOS flash memory devices is investigate by 3D Process and device simulation and their electrical characteristics are compared to conventional SONOS devices. The corner effect has been observed in fin-type SONOS device. The reason why the memory characteristic in fin-type SONOS flash memory device is not improved, might be due to existing undesirable effect such as corner effect as well as the mutual interference of electric field in the fin-type structure as reported previously.

• 방사선산업학회지
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• 제4권4호
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• pp.297-306
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• 2010

Due to the increasing incidence of diabetes, obesity and hypertensive, stevia has been placed great attentions as the sweetener to substitute sucrose in the world. Stevia was introduced to Korea in 1970's, but it has not been an attractive crop in that time. However, recently it has more attention for the natural food sweet additives. Because stevia have many problems for cultivation especially cultivar, seed germination, fertility, uniformity and glycoside quality, the sport mutation was attempted to in vitro plants for the improvement of some characteristics. The young in vitro plants was nursed on MS medium supplemented with $1mg\;l^{-1}\;GA_3$. Shoots of 10 cm height were irradiated with 0~200 Gy of gamma ray and the every node was separated and inoculated on MS basic medium. The lethality, number and length of shoot, numbers of node and branch were investigated for the evaluation of radiosensitivity. The optimum dose of gamma ray seemed to be around 80 Gy for the sport mutation induction in stevia. The lower node was more sensitive than higher node to radiation.

• 한국치위생학회지
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• 제22권3호
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• pp.161-170
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• 2022

Objectives: This study aims to conduct in-depth research on the effect of non-surgical periodontal therapy (NSPT) with the application of a comprehensive dental hygiene care (CDHC) process, and provide basic data for the wide application of CDHC. Methods: From May 8, 2021 to September 24, 2021, mixed-methods research was conducted in 36 patients with periodontal diseases. A paired samples t-test was used to analyze the quantitative research data using IBM SPSS program(ver. 22.0; IBM Corp., Armonk, NY, USA) and qualitative research data were analyzed using the thematic analysis method. Results: With NSPT applying the CDHC process, the perception of periodontal health and self-efficacy of periodontal healthcare were increased (p<0.001). Presence of gingivitis, probing pocket depth, bleeding on probing rate, presence of subgingival calculus, and dental plaque index were reduced (p<0.001). Based on 195 meaningful statements, 26 concepts, 12 sub-themes, and 5 themes , , , and were drawn. Conclusions: The perception of periodontal health and the self-efficacy were improved, and substantial change in the clinical index. The CDHC application allowed the study participants to perceive the importance of dental care and professionalism of dental hygienists.

• Journal of Microbiology and Biotechnology
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• 제33권3호
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• pp.363-370
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• 2023

Atopic dermatitis (AD) is a chronic inflammation associated with skin hypersensitivity caused by environmental factors. The objent of this study was to assess the hot water extracts of Sargassum horneri (SHHWE) on AD. AD was induced by spreading 2,4-dinitrochlorobenzene (DNCB) on the BALB/c mice. The efficacy of SHHWE was tested by observing the immunoglobulin E (IgE), cytokine, skin clinical severity score and cytokine secretions in concanavalin A (Con A)-stimulated splenocytes. The levels of interleukine (IL)-4, IL-5 and IgE, the pro-inflammatory cytokines that are closely related, were notably suppressed in a does-dependent manner by SHHWE, whereas the level of interferon γ (IFN-γ), the atopy-related Th1 cytokine inhibiting the production of Th2 cytokines, was increased. Therefore, these results show that SHHWE has a potent anti- inhibitory effect on AD and is highly valuable for cosmetic development.