• Korean Journal of Plant Resources
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• v.28 no.6
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• pp.690-696
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• 2015

We micropropagated pear (Pyrus species) using shoot tips and nodal explants from three pear genotypes. The ability to establish shoot tip cultures, proliferate shoots, induce rooting, and acclimatize the resulting plantlets are all elements of in vitro micropropagation. Shoots were induced from shoot tips on Murashige and Skoog medium (MS) with five different plant growth regulator combinations. The highest shoot formation rates were achieved for the three genotypes using MS supplemented with 1.0 mg/L N⁶-benzyladenine (BA) and 0.1 mg/L gibberellic acid (GA₃). The maximum shoot number and shoot length for the three cultivars were recorded with 2.0 mg/L BA and 0.2 mg/L indole-3-butyric acid (IBA) in multiplication medium using nodal explants produced from microshoots. Nodal explants with one or two axillary buds cultured for three weeks initiated roots on medium supplemented with various concentrations of 1-naphthaleneacetic acid (NAA) or/and IBA in half-strength MS medium for adventitious rooting. The highest rooting response was with the combination of 0.2 mg/L NAA and 0.2 mg/L IBA. A combination of NAA and IBA resulted in a significant increase in the rooting ratio over NAA or IBA alone. In this medium, the root formation rate according to ranged from 68.9% for the BaeYun No. 3 genotype to 51.8% for the Hwanggeum genotype. We also investigated the influence of the concentration the polyamine phloroglucinol in rooting medium. For all three genotypes, the highest rooting ratio, longest root length, and greatest root number were observed in the treatments with 75-150 mg/L phloroglucinol. Most rooted plants were acclimatized successfully.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.383-389
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• 2001

We report on the design, fabrication, and characterization of 0.35${\mu}{\textrm}{m}$-gate AIGaAs/InGaAs PHEMTs for millimeter-wane applications. The epi-wafer structures were designed using ATLAS for optimum DC and AC characteristics, 0.351m-gate AIGaAs/rnGaAs PHEMTs having different gate widths and number of fingers were fabricated using electron beam lithography Dependence of RF characteristics of PHEMT on gate finger with and number of gate fingers have been investigated. PHEMT haying two 0.35$\times$60${\mu}{\textrm}{m}$$^2$ gate fingers showed the knee voltage, pinch-off voltage, drain saturation current density, and maximum transconductance of 1.2V, -1.5V, 275㎃/mm, and 260.17㎳/mm, respectively. The PHEMT showed fT(equation omitted)(current gain cut-off frequency) of 45㎓ and fmax(maximum oscillation frequency) of 100㎓. S$_{21}$ and MAG of the PHEMT were 3.6dB and 11.15dB, respectively, at 35㎓

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.217-223
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• 2010

We grew multi-stacked InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type GaAs top contact layer (TCL) is above $600^{\circ}C$, the PL intensity severely decreased and dark current level increased. At bias of 0.5 V, the activation energy for temperature dependence of dark current decreased from 106 meV to 48 meV with increasing the growth temperature of n-type GaAs TCL from 580 to $650^{\circ}C$. This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and $In_{0.1}Ga_{0.9}As$ well layer.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• The Journal of the Convergence on Culture Technology
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• v.7 no.4
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• pp.785-789
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• 2021

Paprika productivity is different even in the same quality greenhouse and in the same region. These differences are known to due to differences in various environmental factors. This study was conducted to investigate the difference in the level of various environmental factors between high-productivity (HPF) and low-productivity (LPF) greenhouses. The largest difference between the two greenhouses in the daily or weekly average values of major environmental factors was the CO₂ concentration, but the LPF was higher than the HPF, so it was not determined as a factor for the difference in productivity. Correlation analysis among 14 environmental factors showed a high correlation among irradiation or related factors in moisture. The regression coefficients of the linear regression model between vapor pressure deficit and relative humidity were -0.0202kpa in HPF and -0.0262kpa in LPF. In particular, in February and March, the vapor pressure deficit in LPF was 1.5kpa or more, and the cumulative vapor pressure deficit compared to the cumulative irradiation at the early period of cultivation increased rapidly. The reason for the low productivity in LPF is thought to be that the plant was affected by moisture stress due to high vapor pressure deficit and transpiration under low irradiation conditions in the early period of cultivation and in winter.

• Korean Journal of Medicinal Crop Science
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• v.10 no.4
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• pp.249-252
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• 2002

Several plant growth regulators were examined for on their effect on the in vitro propagation of Kalopanax pictus$(T_{HUNB}.)$ $(N_{AKAI}.)$ on WPM medium. Among the cytokinins tested, BA at $13.32\;{\mu}M$ appeared to be the most effective for multiple axillary shoot formation. Although the addition of $2.89\;{\mu}M\;GA_3$ promoted stem elongation, it produced morphologically abnormal leaves and stems. For rooting of the shoots, $4.9\;{\mu}M$ IBA seemed to be more effective than $2.69\;{\mu}M$ NAA. When the regenerated plants were transferred on artificial mixture containing vermiculite and peat-moss (1 : 1, v/v), 81% of them survived and grew normally.

• ETRI Journal
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• v.31 no.3
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• pp.247-253
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• 2009

We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 ${\mu}m$ GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.

• Journal of the Korean Society of Food Culture
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• v.3 no.2
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• pp.143-151
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• 1988

'On Zu Bub,' written in Korean, is the anonymous old cook book. The kinds of cooking food recorded-Wine 44, Nu Ruk 2, Sauce 2, dessert 6, side dish 2 etc.-are fifty-six items in all. Especially it was written mirutely about brewage. The wines such as Sub Wang Mo You Bok Gyung Hyang Zu, Gu Ga Zu, Sin Bang Zu, Bang Se Hyang Zu, Zuhk Sun So Zu, Gye Dang Zu, Sa Mi Zu, Gwa Ha Jul Mi Zu were not found in other old cook books, 'Eum Sik Di Mi Bang' and 'Zu Bang Moon' and the contents about Gu Gi Za Zu was guoted from Zi Bung You Suhl. The seasonings used were black pepper, ginger, Chun Cho, Cinnamon, Sugar, ect, but red pepper was not used. But, we can find 'Bingsagua' from this book. First 'Bingsagua' has been found in 1789. 'On zu Bub' is guessed developed in late 1700's.

• Applied Chemistry for Engineering
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• v.18 no.3
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• pp.218-226
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• 2007

The stereoselective synthesis of chiral terminal epoxides is of immense academic and industrial interest due to their utility as versatile starting materials as well as chiral intermediates. In this study, new dinuclear chiral Co (salen) complexes bearing gallium-, indium- and tallium-chloride have been synthesized and characterized. The mass and EXAFS spectra provided the direct evidence of formation of dinuclear complex. Their catalytic activity and selectivity have been demonstrated for the asymmetric ring opening of various terminal epoxides having ether or ester groups by hydrolytic kinetic resolution technology. The easily prepared dimeric complexes exhibited very high enantioselectivity for the asymmetric ring opening of epoxides with $H_2O$ nucleophile, providing enantiomerically enriched terminal epoxides (> 99% ee). The dimeric structured chiral salen showed remarkably enhanced reactivity and may be employed substantially lower loadings than its monomeric analogues. The system described in this work is very efficient for the synthesis of chiral epoxide and 1,2-diol intermediates

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.212-223
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• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.