• Title/Summary/Keyword: G - near

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Mechanical design of mounts for IGRINS focal plane array

  • Oh, Jae Sok;Park, Chan;Cha, Sang-Mok;Yuk, In-Soo;Park, Kwijong;Kim, Kang-Min;Chun, Moo-Young;Ko, Kyeongyeon;Oh, Heeyoung;Jeong, Ueejeong;Nah, Jakyuong;Lee, Hanshin;Pavel, Michael;Jaffe, Daniel T.
    • The Bulletin of The Korean Astronomical Society
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    • v.39 no.1
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    • pp.53.2-53.2
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    • 2014
  • IGRINS, the Immersion GRating INfrared Spectrometer, is a near-infrared wide-band high-resolution spectrograph jointly developed by the Korea Astronomy and Space Science Institute and the University of Texas at Austin. IGRINS employs three HAWAII-2RG focal plane array (FPA) detectors. The mechanical mounts for these detectors serves a critical function in the overall instrument design: Optically, they permit the only positional compensation in the otherwise "build to print" design. Thermally, they permit setting and control of the detector operating temperature independently of the cryostat bench. We present the design and fabrication of the mechanical mount as a single module. The detector mount includes the array housing, a housing for the SIDECAR ASIC, a field flattener lens holder, and a support base. The detector and ASIC housing will be kept at 65 K and the support base at 130 K. G10 supports thermally isolate the detector and ASIC housing from the support base. The field flattening lens holder attaches directly to the FPA array housing and holds the lens with a six-point kinematic mount. Fine adjustment features permit changes in axial position and in yaw and pitch angles. We optimized the structural stability and thermal characteristics of the mount design using computer-aided 3D modeling and finite element analysis. Based on the computer simulation, the designed detector mount meets the optical and thermal requirements very well.

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Modeling of Solid Particle-Slag Interactions in Entrained Gasification Reactor (분류층 가스화기에서의 고체 입자-슬래그 간 상호 작용에 대한 모델링)

  • Chi, Jun-Hwa;Kim, Ki-Tae;Kim, Sung-Chul;Chung, Jae-Hwa;Ju, Ji-Sun;Kim, Ui-Sik
    • Transactions of the Korean hydrogen and new energy society
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    • v.22 no.5
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    • pp.686-698
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    • 2011
  • Mathematical models for char-slag interaction and near-wall particle segregation developed by Montagnaro et. al. were applied to predict various aspects of coal gasification in an up-flow entrained gasifier of commercial scale. For this purpose, some computer simulations were performed using gPROMS as the numerical solver. Typical design parameters and operating conditions of the commercial gasifiers were used as input values for the simulation. Development of a densely dispersed phase of solid carbon was found to have a critical effect on both carbon conversion and ash flow behavior. In general, such a slow-moving phase was turned out to enhance carbon conversion by lengthening the residence time of char or soot particles. Furthermore, it was also found that guiding the transfer of char or soot into the closer part of the wall to coal burner is favorable in terms of gasification efficiency and vitrified ash collection. Finally, to a certain degree densely dispersed phase of carbon showed an yield-enhancing effect of syngas.

Growth of Large GaN Substrate with Hydride Vapor Phase Epitaxy (HVPE법에 의해 대구경 GaN 기판 성장)

  • Kim, Chong-Don;Ko, Jung-Eun;Jo, Chul-Soo;Kim, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.99-99
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    • 2008
  • To grow the large diameter GaN with high structure and optical quality has been obtained by hydride vapor phase epitaxy(HVPE) method. In addition to the nitridation of $Al_2O_3$ substrate, we also developed a "step-growth process" to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch during cool down after growth. The as-grown 380um thickness and 75mm diameter GaN layer was separated from the sapphire substrate by laser-induced lift-off process at $600^{\circ}C$. A problem with the free-standing wafer is the typically large bowing of such a wafer, due to the built in the defect concentration near GaN-sapphire interface. A polished G-surface of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD), photoluminescence(PL) measurement, giving rise to the full-width at half maximum(FWHM) of the rocking curve of about 107 arcsec and dislocation density of $6.2\times10^6/cm^2$.

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A Cryptographic Model to Protect Private Information against Malicious Proxy in Jini (악의적 지니 프록시로부터 비밀 정보 보호를 위한 암호학적 모델)

  • Yang Jong-Phil;Rhee Kyung-Hyune
    • The KIPS Transactions:PartC
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    • v.13C no.1 s.104
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    • pp.27-34
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    • 2006
  • In the near future, people will wish to access many kinds of heterogeneous networks to use their services anytime and anywhere. Owing to the heterogeneity of networks, there must be many kinds of protocols to guarantee secure services. The mobile device can depend in a middleware for accessing services in the heterogeneous networks and the middleware helps the mobile device to communicate with services without blowing concrete protocols. If a secure channel is necessary, the middleware may access a private key in the mobile device to perform a security protocol. In this paper, we focus on the security of a private key in the mobile device against malicious middlewares. To do so, we introduce two models for a user to protect his/her private key against malicious middlewares by generating authentication data(e.g., digital signatures) without keeping the private key in the mobile device.

Robotized Filament Winding of Full Section Parts: Comparison Between Two Winding Trajectory Planning Rules

  • Sorrentino, L.;Polini, W.;Carrino, L.;Anamateros, E.;Paris, G.
    • Advanced Composite Materials
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    • v.17 no.1
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    • pp.1-23
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    • 2008
  • Robotized filament winding technology involves a robot that winds a roving impregnated by resin on a die along the directions of stresses to which the work-piece is submitted in applications. The robot moves a deposition head along a winding trajectory in order to deposit roving. The trajectory planning is a very critical aspect of robotized filament winding technology, since it is responsible for both the tension constancy and the winding time. The present work shows two original rules to plan the winding trajectory of structural parts, whose shape is obtained by sweeping a full section around a 3D curve that must be closed and not crossing in order to assure a continuous winding. The first rule plans the winding trajectory by approximating the part 3D shape with straight lines; it is called the discretized rule. The second rule defines the winding trajectory simply by offsetting a 3D curve that reproduces the part 3D shape, of a defined distance; it is called the offset rule. The two rules have been compared in terms of roving tension and winding time. The present work shows how the offset rule enables achievement of both the required aims: to manufacture parts of high structural performances by keeping the tension on the roving near to the nominal value and to markedly decrease the winding time. This is the first step towards the optimization of the robotized filament winding technology.

Study on Optimal Welding Condition for Shipbuilding Steel Materials (조선강재의 최적 용접조건에 관한 연구)

  • Kim, Ok-Hwan
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.10 no.6
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    • pp.128-133
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    • 2011
  • In this study, the steel material for shipbuilding(LR-A class) was used, and FCAW was taken advantage of 3G attitude and they are welded by different welding ways. As a result of analyzing wave with welding monitoring system, the stable values are obtained which are the first floor(electronic current 164~182 A, voltage 24 V), the second floor(electronic current 174~190 A, voltage 22~25 V), the third floor(electronic current 158~188 A, voltage 22~25 V), and fourth floor(electronic current 172~184 A, voltage 22~25 V), at this time, the stable wave standard deviation and changing coefficient could be obtained. When the welding testing through nondestructive inspection was analyzed know defect of welding, there was no defect of welding in A, D, E, but some porosities in B, and slag conclusion near the surface in C, because the length of arc was not accurate, and the electronic current and voltage was not stable. After observing the change of heat affect zone through micro testing, each organization of floor formed as Grain Refinement, so welding part was fine, the distance of heat affect zone is getting wider up to change the values of the electronic current and voltage. As a result of degree of hardness testing, the hardness orders were the heat affect zone(HAZ), Welding Zone(WZ), and Base Metal(BM). When the distribution of degree of hardness is observed. B is the highest degree of hardness The reason why heat effect zone is higher than welding zone and base metal, welding zone is boiled over melting point($1539^{\circ}C$) and it starts to melt after the result of analysis through metal microscope, so we can know that delicate tissue is created at the welding zone. Therefore, in order to get the optimal conditions of the welding, the proper current of the welding and voltage is needed. Furthermore the precise work of welding is required.

Structural and electrical characteristics of IZO thin films with deposition temperature (증착 온도에 따른 IZO 박막의 구조적 및 전기적 특성)

  • Jun, D.G.;Lee, Y.L.;Lee, K.M.
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.3
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    • pp.67-74
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    • 2011
  • In this study, we have investigated the effect of the substrate temperature on the structural and the electrical characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various substrate temperature. The substrate temperature has been changed from room temperature to $400^{\circ}C$. Samples which were deposited under $250^{\circ}C$ show amorphous structure. The electrical resistivity of crystalline-IZO (c-IZO) film was higher than that of amorphous-IZO (a-IZO) film. And the electrical resistivity showed minimum value near $150^{\circ}C$ of deposition temperature. The OLED device was fabricated with different IZO substrates made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

CONSTRAINING SUPERNOVA PROGENITORS: AN INTEGRAL FIELD SPECTROSCOPIC SURVEY OF THE EXPLOSION SITES

  • KUNCARAYAKTI, H.;ALDERING, G.;ANDERSON, J.P.;ARIMOTO, N.;DOI, M.;GALBANY, L.;HAMUY, M.;HASHIBA, Y.;KRUEHLER, T.;MAEDA, K.;MOROKUMA, T.;USUDA, T.
    • Publications of The Korean Astronomical Society
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    • v.30 no.2
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    • pp.139-143
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    • 2015
  • We describe a survey of nearby core-collapse supernova (SN) explosion sites using integral field spectroscopy (IFS) techniques, which is an extension of the work described in Kuncarayakti et al. (2013). The project aims to constrain SN progenitor properties based on the study of the immediate environment of the SN. The stellar populations present at the SN explosion sites are studied by means of integral field spectroscopy, which enables the acquisition of both spatial and spectral information of the object simultaneously. The spectrum of the SN parent stellar population gives an estimate of its age and metallicity. With this information, the initial mass and metallicity of the once coeval SN progenitor star are derived. While the survey is mostly done in optical, the additional utilization of near-infrared integral field spectroscopy assisted with adaptive optics (AO) enables us to examine the explosion sites in high spatial detail, down to a few parsecs. This work is being carried out using multiple 2-8 m class telescopes equipped with integral field spectrographs in Chile and Hawaii.

The study of ferroelectric properties for Pb(Mg1/3Ta2/3)O3-PbTiO3 solid solution modified with ZrO2 (ZrO2 첨가에 따른 Pb(Mg1/3Ta2/3)O3-PbTiO3 고용체의 강유전 특성 연구)

  • Kim, B.G.
    • Journal of the Korean Vacuum Society
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    • v.17 no.4
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    • pp.317-321
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    • 2008
  • The $0.65Pb(Mg_{1/3}Ta_{2/3})O_3-0.35PbTiO_3$ (PMT-PT)ceramics were near morphotropic phase boundary. The dielectric constant, the loss, and pyroelectric coefficient of the ceramics were measured as a function of temperature ($25^{\circ}C\;{\sim}\;250^{\circ}C$). The dielectric constant, the loss, and the pyroelectric coefficient could be improved with the addition of small amounts of $ZrO_2$ up to 0.2 mol%. The dielectric and pyroelectric peak temperature are slightly shifted to lower temperatrues with the addition of amount of $ZrO_2$.

Dielectric Characteristics of EVA and LLDPE Films (에틸렌비닐아세테이트와 선형저밀도폴리에틸렌 박막의 유전특성)

  • 성민우;고시현;신종열;이충호;조경순;홍진웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.783-786
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    • 2000
  • In this paper, physical properties and dielectric characteristics of LLDPE and EVA which are used as a blending material to improve PE's performance are studied. LLDPE of 0.92[g/cm3] and EVA with the EVA contents of 12.5[%1 were selected as specimens, and X-ray diffraction(XRD) are used to analysis physical properties. We measured dielectric constant with the frequency range from 20[Hz] to 1 [MHz], applied voltage 6[V] and the temperature from 25[$^{\circ}C$] to 110[$^{\circ}C$]. From XRD, LLDPE has a crystallinity of 53[%] and, 46[%] for EVA. LLDPE has as low tan$\delta$ as of 10$^{-3}$ ~10$^{-4}$ and inflection point near 500[Hz]. At frequency region lower than 500[Hz], tan$\delta$ decreases with frequency and increases with temperature and it is considered to be caused by conductive carriers within specimen. Over 500[Hz], it is the reverse and we thought that it was caused by decrease of relaxation time due to Debye theory, EVA has tan$\delta$with the values of 10$^{-2}$ ~10$^{-3}$ , which is higher than that of LLDPE, and it has inflection point at 60[Hz]. It is shown that Dielectric characteristics of EVA are similar to LLDPE's.

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