• Journal of Power Electronics
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• v.16 no.3
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• pp.849-860
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• 2016

The high-switching-frequency operation of power converters can achieve high power density through size reduction of passive components, such as capacitors, inductors, and transformers. However, a small-output capacitor that has small capacitance and low effective series resistance changes the small-signal model of the converter power stage. Such a capacitor can make the converter unstable by increasing the crossover frequency in the transfer function of the small-signal model. In this paper, the design and implementation of a high-frequency LLC resonant converter are presented to verify the power density enhancement achieved by decreasing the size of passive components. The effect of small output capacitance is analyzed for stability by using a proper small-signal model of the LLC resonant converter. Finally, proper design methods of a feedback compensator are proposed to obtain a sufficient phase margin in the Bode plot of the loop gain of the converter for stable operation at 500 kHz switching frequency. A theoretical approach using MATLAB, a simulation approach using PSIM, and experimental results are presented to show the validity of the proposed analysis and design methods with 100 and 500 kHz prototype converters.

• Clinical and Experimental Pediatrics
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• v.52 no.3
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• pp.370-375
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• 2009

Purpose : The risk of metabolic syndrome (MS) and cardiovascular disease in Turner syndrome (TS) patients is high. We analyzed metabolic factors in adults with TS and evaluated the metabolic risk of insulin resistance. Methods : Forty-three adults with TS were enrolled. The frequency of MS and the values of the metabolic factors were analyzed. Patients were divided into insulin resistant and non-resistant groups according to values of homeostasis model assessment of insulin resistance (HOMA-IR). The correlations of HOMA-IR with metabolic parameters were analyzed. Results : The frequency of MS was 7% and those of each metabolic parameter were as follows: insulin resistance, 16.3%; central obesity, 15.4%; hypertriglyceridemia, 2.3%; low HDL cholesterol, 9.3%; hypertension, 36.8%. The insulin-resistant group had significantly higher values of body mass index (BMI), waist circumference (WC), fasting plasma glucose (FPG), HOMA-IR, and systolic blood pressure (SBP) than the non-resistant group (P<0.05). HOMA-IR showed a significantly positive correlation with BMI, WC, FPG, and SBP and showed a negative correlation with HDL cholesterol. Conclusion : This study suggests that adults with TS have a high risk of metabolic syndrome, and insulin resistance is correlated with metabolic factors. Therefore, TS patients should have their metabolic parameters monitored regularly to minimize metabolic complications and prevent cardiovascular diseases.

• Korean journal of applied entomology
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• v.40 no.4
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• pp.327-335
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• 2001

In order to establish a whitefly control system using conventional groups of insecticide(carbamate, organophosphorus and pyrethroid insecticides), three alternative application methods were designed on the medium growth stage of cucumber. To discriminate the effectiveness of these sequences observed were the residual activity of insecticides, frequency of insecticide applications, residue of insecticides in cucumber leaves, development of insecticide resistance in whitefly, and yield of fruits. Spraying furathiocarb, a carbamate insecticide, was very effective in reducing the frequency of application for the control of white flies. The effectiveness of furathiocarb was enhanced by the potentiation process to carbofuran, the long residual activity, and the lower development rate of insecticide resistance. Methion, an organophosphorus insecticide, did not show resistance development after successive use but resulted in short residual activity. However, other organophosphates, profenofos and phenthoate, lost their activity by the resistance development. Decreasing activity was common to pyrethroids, deltamethrin and zetacypermethrin due to resistance. From these results it could be drawn a conclusion that furathiocarb, a carbamate insecticide, was the most desirable among conventional insecticide groups for the management of greenhouse whitefly population on the cucumber. To prevent an outbreak of the insect pest by various cause, it was recommended to choose acetamiprid, a nicotinoid, which showed very good control efficacy to the resistance insects to conventional insecticides.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.515-521
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• 2013

Magnetoelectric(ME) bulk composites with PZT-PNN-PZN/$Fe_2O_4$ were prepared by using a conventional ceramic methods and investigated on the ME voltage vs frequency of ac magnetic fields. We made the electric equivalent circuits by using the Maxwell-Wagner model and simulated the frequency dependence of ME voltage in low frequency region. ME devices were described by a series of two equivalent circuits of piezoelectric and magnetic, which have the relaxation time ${\tau}$ due to the interaction between ME device and load resistor. Equivalent circuit of piezoelectric material is independent of frequency. However ferrite magnetic materials have Debye absorption and dipolar dispersion, whose equivalent circuit is a function of frequency. Therefore we suggest the resistance in the equivalent circuit is proportion to $1+{\omega}^2{\tau}^2$ and the capacitance is in inverse proportion to $1+{\omega}^2{\tau}^2$ in the magnetic materials.

• Proceedings of the KWS Conference
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• 2000.04a
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• pp.181-184
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• 2000

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.728-735
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• 2016

A 70 MHz temperature-compensated on-chip CMOS relaxation oscillator for mobile display driver ICs is proposed to reduce frequency variations. The proposed oscillator compensates for frequency variation with respect to temperature by adjusting the bias currents to control the change in delay of comparators with temperature. A bandgap reference (BGR) is used to stabilize the bias currents with respect to temperature and supply voltages. Additional temperature compensation for the generated frequency is achieved by optimizing the resistance in the BGR after measuring the output frequency. In addition, a trimming circuit is implemented to reduce frequency variation with respect to process. The proposed relaxation oscillator is fabricated using 45 nm CMOS technology and occupies an active area of $0.15mm^2$. The measured frequency variations with respect to temperature and supply voltages are as follows: (i) ${\pm}0.23%$ for changes in temperature from -30 to $75^{\circ}C$, (ii) ${\pm}0.14%$ for changes in $V_{DD1}$ from 2.2 to 2.8 V, and (iii) ${\pm}1.88%$ for changes in $V_{DD2}$ from 1.05 to 1.15 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.310-311
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• 2011

Dual-frequency (DF) capacitively coupled plasmas (CCP) are used to separately control the mean ion energy and flux at the electrodes [1]. This separate control in capacitively coupled radio frequency discharges is one of the most important issues for various applications of plasma processing. For instance, in the Plasma Enhanced Chemical Vapor Deposition processes such as used for solar cell manufacturing, this separate control is most relevant. It principally allows to increase the ion flux for high deposition rates, while the mean ion energy is kept constant at low values to prevent highly energetic ion bombardment of the substrate to avoid unwanted damage of the surface structure. DF CCP can be analyzed in a fashion similar to single-frequency (SF) driven with effective parameters [2]. It means that DF CCP can be converted into SF CCP with effective parameters such as effective frequency and effective current density. In this study, comparison of DF CCP and its converted effective SF CCP is carried out through particle-in-cell/Monte Carlo (PIC-MCC) simulations. The PIC-MCC simulation shows that DF CCP and its converted effective SF CCP have almost the same plasma characteristics. In DF CCP, the negative resistance arises from the competition of the effective current and the effective frequency [2]. As the high-frequency current increases, the square of the effective frequency increases more than the effective current does. As a result, the effective voltage decreases with the effective current and it leads to an increase of the ion flux and a decrease of the mean ion energy. Because of that, the negative resistance regime can be called the preferable regime for solar cell manufacturing. In this preferable regime, comparison of DF (13.56+100 or 200 MHz) CCP and SF (60 MHz) CCP with the same effective current density is carried out. At the lower effective current density (or at the lower plasma density), the mean ion energy of SF CCP is lower than that of DF CCP. At the higher effective current density (or at the higher plasma density), however, the mean ion energy is lower than that of SF CCP. In this case, using DF CCP is better than SF CCP for solar cell manufacturing processes.

• Proceedings of the KWS Conference
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• 1999.05a
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• pp.165-168
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• 1999

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.25-31
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• 2016

Parasitic capacitance and resistance of FinFET transistors are the important components that determine the frequency performance of the circuit. Therefore, the researchers in our group developed more accurate parasitic capacitance and resistance for FinFETs than BSIM-CMG. To verify the RF performance, proposed model was applied to design an LNA that has $S_{21}$ more than 10dB and center frequency more than 60GHz using HSPICE. To verify the accuracy of the proposed model, mixed-mode capability of 3D TCAD simulator Sentaurus was used. $S_{21}$ of LNA was chosen as a reference to estimate the error. $S_{21}$ of proposed model showed 87.5% accuracy compared to that of Sentaurus in 10GHz~100GHz frequency range. The $S_{21}$ accuracy of BSIM-CMG model was 56.5%, so by using the proposed model, the accuracy of the circuit simulator improved by 31%. This results validates the accuracy of the proposed model in RF domain and show that the accuracies of the parasitic capacitance and resistance are critical in accurately predicting the LNA performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.81-85
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• 2009

We has been analysed optical properties of OLED(organic light emitting diode) and characteristics of ITO(Indium Tin Oxide) in terms of $O_2$ plasma treatment for manufacturing high efficiency OLED, RF power of $O_2$ plasma was changed 25, 50, 100, 200 W. $O_2$ gas flow, gas pressure and treatment time were fixed. Sheet resistance and surface roughness of ITO were measured by Hall-effect measurement system and AFM, respectively. The ranges of sheet resistance and surface roughness were $5.5{\sim}6,06\;{\Omega}$ and $2.438{\sim}3.506\;nm$ changing of RF power, respectively, PM(Passive Matrix)OLED was fabricated with the structure of ITO(plasm treatment)/TPD($400\;{\AA}$)/$Alq_3(600\;{\AA})$/LiF($5\;{\AA}$)/Al($1200\;{\AA}$). Turn-on voltage of PMOLED was 7 V and luminance was $7,371\;cd/m^2$ at the RF power of 25 W, $O_2$ plasma treatment of ITO surface was result in lowering the operating voltage and improving luminance of PMOLED.