Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optical Properties of Organic Light Emitting Diode and Characteristics of ITO by Variation of Radio Frequency Plasma Power

Radio Frequency Plasma Power변화에 따른 ITO 특성 및 OLED의 광학적 특성

  • Published : 2009.01.01
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Abstract

We has been analysed optical properties of OLED(organic light emitting diode) and characteristics of ITO(Indium Tin Oxide) in terms of $O_2$ plasma treatment for manufacturing high efficiency OLED, RF power of $O_2$ plasma was changed 25, 50, 100, 200 W. $O_2$ gas flow, gas pressure and treatment time were fixed. Sheet resistance and surface roughness of ITO were measured by Hall-effect measurement system and AFM, respectively. The ranges of sheet resistance and surface roughness were $5.5{\sim}6,06\;{\Omega}$ and $2.438{\sim}3.506\;nm$ changing of RF power, respectively, PM(Passive Matrix)OLED was fabricated with the structure of ITO(plasm treatment)/TPD($400\;{\AA}$)/$Alq_3(600\;{\AA})$/LiF($5\;{\AA}$)/Al($1200\;{\AA}$). Turn-on voltage of PMOLED was 7 V and luminance was $7,371\;cd/m^2$ at the RF power of 25 W, $O_2$ plasma treatment of ITO surface was result in lowering the operating voltage and improving luminance of PMOLED.

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References

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