• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.279-282
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• 1999

Frequency divider selects the channel of the frequency synthesizer. General programmable divider has many flip-flops to realize all integer division value and stability problem by using dual modules prescaler. In this paper, a new architecture of programmable divider is proposed and designed to improve these problems. The proposed programmable divider has only thirteen flip-flops. The programmable divider is designed by 0.65${\mu}{\textrm}{m}$ CMOS technology and HSPICE. Operating frequency of the programmable divider is 200MHz with a 3V supply voltage.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.185-189
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• 2017

This paper proposes a low power frequency divider for an integrated CMOS phase-locked loop (PLL). An injection-locked frequency divider (ILFD) was designed, along with a current-mode logic (CML) frequency divider in order to obtain a broadband and high-frequency operation. A ring oscillator was designed to operate at 1.2 GHz, and the ILFD was used to divide the frequency of its input signal by two. The structure of the ILFD is similar to that of the ring oscillator in order to ensure the frequency alignment between the oscillator and the ILFD. The CML frequency divider was used as the second stage of the divider. The proposed frequency divider was applied in a conventional PLL design, using a 0.18 ${\mu}m$ CMOS process. Simulation shows that the proposed divide-by-two ILFD and the divide-by-eight CML frequency dividers operated as expected for an input frequency of 1.2 GHz, with a power consumption of 30 mW.

• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.309-314
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• 2014

This work proposes an integrated high frequency divider with an inductive peaking technique implemented in a current mode logic (CML) frequency divider. The proposed divider is composed with a master-slave flip-flop, and the master-slave flip-flop acts as a latch and read circuits which have the differential pair and cross-coupled n-MOSFETs. The cascode bias is applied in an inductive peaking circuit as a current source and the cascode bias is used for its high current driving capability and stable frequency response. The proposed divider is designed with $0.18-{\mu}m$ CMOS process, and the simulation used to evaluate the divider is performed with phase-locked loop (PLL) circuit as a feedback circuit. A divide-by-two operation is properly performed at a high frequency of 20 GHz. In the output frequency spectrum of the PLL, a peak frequency of 2 GHz is obtained witha divide-by-eight circuit at an input frequency of 250 MHz. The reference spur is obtained at -64 dBc and the power consumption is 13 mW.

• 전자공학회논문지
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• 제51권11호
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• pp.107-113
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• 2014

60GHz 무선 통신 시스템에 적용 가능한 전압 제어 발진기와 고속 4분주기를 65nm CMOS 공정을 사용하여 설계했다. 전압제어 발진기는 전류소스와 NMOS 차동쌍 LC구조로 설계하였으며 분주기는 차동 인젝션 록킹 구조에 베렉터를 추가하여 동작주파수 범위를 조절할 수 있는 구조로 설계했다. 전압 제어 발진기와 분주기에 모두 전류소스를 추가하여 전원잡음에 따른 위상잡음 특성을 개선하였다. 전압 제어 발진기는 64.36~67.68GHz의 동작범위가 측정됐고, 고속 4분주기는 전압 제어 발진기의 동작범위에 대해 정확한 4분주가 가능하며 5.47~5.97dBm의 높은 출력전력이 측정됐다. 분주기를 포함한 전압제어 발진기의 위상잡음은 1MHz 오프셋 주파수에서 -77.17dBc/Hz이고 10MHz 오프셋 주파수에서 -110.83dBc/Hz이다. 소모전력은 전원전압 1.2V에서 38.4mW 이다 (VCO 포함).

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.131-137
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• 2014

A 120 GHz voltage controlled oscillator (VCO) with a divider chain including an injection locked frequency divider (ILFD) and six static frequency dividers is demonstrated using 65-nm CMOS technology. The VCO is designed based on the LC cross-coupled push-push structure and operates around 120 GHz. The 60 GHz ILFD at the first stage of the frequency divider chain is based on a similar topology as the core of the VCO to ensure the frequency alignment between the two circuit blocks. The static divider chain is composed of D-flip flops, providing a 64 division ratio. The entire circuit consumes a DC power of 68.5 mW with the chip size of $1385{\times}835{\mu}m^2$.

• 한국전자파학회논문지
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• 제20권10호
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• pp.1107-1113
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• 2009

본 논문에서는 K-Band에서 동작하는 1/2 주파수 분배기를 130 nm CMOS 공정을 이용하여 설계하고 제작한 결과를 보인다. 피드백 방식의 밀러 주파수 분배기는 20~25 GHz에서 동작하며 바이어스 전압 1.2 V에서 7.2 mW의 전력을 소모하고 코어 회로의 레이아웃 크기는 $315{\times}246\;um^2$이다. 밀러 주파수 분배기의 출력 신호를 2분 주시키기 위한 CML(Current Mode Logic) 주파수 분배기는 8.5~13 GHz에서 동작하며 5.7 mW의 전력을 소모하고, 코어 회로의 레이아웃 크기는 $91{\times}98\;um^2$이다. 또한 두 주파수 분배기를 결합하여 20~25 GHz의 입력 신호가 4분주되어 출력됨을 확인하였다.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2003년도 하계학술대회
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• pp.85-87
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• 2003

In this paper, Surppose lumped element type power divider with superior Harmonic suppress characteristic This power divider is small than general power divider(Wilkinson power divider) in low frequency. The lumped element type power divider have applicationa Filter theory. The lumped element type power divider employ neighborhood low frequency as 10MHz.

• 한국통신학회논문지
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• 제27권6C호
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• pp.619-624
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• 2002

본 논문에서는 50%의 duty cycle 출력을 가지며, 디지털 방식으로 분주수를 제어할 수 있는 새로운 분주기 구조를 제안하였다. 그리고 0.25$\mu\textrm{m}$ 2-poly, 5-metal CMOS 공정 파라미터를 이용한 HSPICE 모의실험을 통해서 제안한 주파수 분주기를 이용한 900MHz 주파수 합성기를 설계하였다. 제안한 주파수 분주기의 동작은 0.657m 2-poly, 2-metal CMOS 공정을 사용하여 제작한 칩을 측정하여 확인하였다. 설계한 전압제어발진기(VCO)는 2.5V 전원전압 하에서 900Mh의 충간주파수, $\pm$10%의 동작 범위, 154MHz/V의 이득을 가진다. 또한 모의실험 결과 주파수 합성기의 settling time은 약 $1.5\mu\textrm{m}$이고 짝수와 홀수 분주시 50%의 duty cycle과 820MHz~1GHz의 동작 주파수 범위를 갖으며, 전력소모는 대략 70mW 임을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권4호
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• pp.329-335
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• 2011

In this paper, a dual-band integer-N frequency divider is proposed for 2.4/5.2 GHz multi-standard wireless local area networks. It consists of a multi-modulus imbalance phase switching prescaler and two all-stage programmable counters. It is able to provide dual-band operation with high resolution while maintaining a low power consumption. This frequency divider is integrated with a 5 GHz VCO for multi-standard applications. Measurement results show that the VCO with frequency divider can work at 5.2 GHz with a total power consumption of 22 mW.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권3호
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• pp.190-197
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• 2011

This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90-nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm ${\times}$ 0.69 mm including the DC and RF pads.