• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.242-244
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• 1987

Using the energy trapping theory and the acoustic coupling theory. the Bandpass filter(center frequency = 10.7 MHz) of the fundamental thickness mode was made from the composition of $Pb_{0.96}Sr_{0.04}(Zr_{0.53}Ti_{0.47})O_3$+ 1wt% $Fe_2O_3$. Also, in the double mode monolithic filter, It was observed that as decreasing the size of the electrodes, or shortening the gap between two electrodes, the percent frequency separation was increased. Based on these. a 10.7 MHz uniwafer filter was made having the characteristics that bandwidth was 700 KHz and the percent frequency separation was 6 [dB] and selectivity was 29 [dB], end spurious response was 24 [dB] and insertion loss was 7 [dB].

• 한국음향학회지
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• 제6권1호
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• pp.5-14
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• 1987

이 논문은 시간 및 주파수 선택성페이딩이 동시에 존재하는 채널에서 대역확산 주파수 도약통신시스템의 전송특성을 제시한다. 수신기는 승적합산기를 포함한 binary noncoherent matched-filter fast FH-SS시스템이다. 이 시스템에서 SNR, 채널 선택도, 전력비 등의 변동에 따른 오차확률은 데이터율을 고려하지 않고 다이버시티 개념을 사용하여 구하였으며, 오차확율에 대한 데이터를 분석한 결과 FH-SS 시스템은 시간 선택성 페이딩 채널에서 전송특성이 우수함을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.410-410
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• 2009

• 전자공학회논문지B
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• 제33B권10호
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• pp.130-138
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• 1996

In this paper, we propose a neural network which detect edges of different orentation and spatial frequency in arbitrary image data. We constructed the proposed neural network iwth two different types neural network. A diffusion network performs the gaussian operation efficiently by the diffusion process. And the spatial difference network has specially designed connections suitble to detect the contours of a specific oriention. Simulation results showed that the proposed neural network can extract the edges of selected orientation efficiently by applying the neural network to a test pattern and the real image.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.325-334
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• 2018

Lactose is a reducing disaccharide consisting of two different monosaccharides such as galactose and glucose. The hydrogenation of lactose to lactitol is a formidable challenge because it is a complex process and several side products are formed. In this work, we synthesized Ru-Ni bimetallic nanohybrids as efficient catalysts for selective lactose hydrogenation to give selective lactitol. Ru-Ni bimetallic nanohybrids with $Ru-NiO_x$ (x = 1, 5, and 10 wt%) are prepared by impregnating Ru and Ni salts precursors with $TiO_2$ used as support material. Ru-Ni bimetallic nanohybrids (represented as $5Ru-5NiO/TiO_2$) catalyst is found to exhibit the remarkably high selectivity of lactitol (99.4%) and turnover frequency i.e. ($374h^{-1}$). In contrast, monometallic $Ru/TiO_2$ catalyst shows poor performance with ($TOF=251h^{-1}$). The detailed characterizations confirmed a strong interaction between Ru and NiO species, demonstrating a synergistic effect on the improvement on lactitol selectivity. The impregnation-reduction method for the preparation of bimetallic $Ru-NiO/TiO_2$ catalyst promoted Ru nanoparticles dispersed on NiO and intensified the interaction between Ru and NiO species. $Ru-NiO/TiO_2$ efficiently catalyzed the hydrogenation of lactose to lactitol with high yield/selectivity at almost complete conversion of lactose at $120^{\circ}C$ and 55 bar of hydrogen ($H_2$) pressure. Moreover, $Ru-NiO/TiO_2$ catalyst could also be easily recovered and reused up to four runs without notable change in original activity.

• 전기화학회지
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• 제11권3호
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• pp.147-153
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• 2008

Improvement of the selectivity of nonenzymatic glucose based on mesoporous platinum ($H_1$-ePt) by using A.C. impedance is reported. The idea of the present work is based on the novel effect of the mesoporous electrode that the apparent exchange current due to glucose oxidation remarkably grows although the reaction kinetics on the surface is still sluggish. It is expected that the enlarged apparent exchange current on the mesoporous electrode can raise the sensitivity of admittance in A.C. impedance to glucose concentration. At a low frequency, A.C. impedance could become more powerful. The admittance at 0.01 Hz is even more sensitive to glucose than to ascorbic acid while amperometry exhibits the inverse order of sensitivity. This is the unique behavior that is neither observed by A.C. impedance on flat platinum electrode nor obtained by amperometry. The study shows how the combination of A.C. impedance and nano-structured surface can be applied to the detection of sluggish reaction such as electrochemical oxidation of glucose.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.166-169
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• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.250-251
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• 2009

For the fabrication of a multilevel resist (MLR) based on a very thin amorphous carbon (a-C) layer an $Si_{3}N_{4}$ hard-mask layer, the selective etching of the $Si_{3}N_{4}$ layer using physical-vapor-deposited (PVD) a-C mask was investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in $CH_{2}F_{2}/H_{2}/Ar$ plasmas : HF/LF powr ratio ($P_{HF}/P_{LF}$), and $CH_{2}F_{2}$ and $H_2$ flow rates. It was found that infinitely high etch selectivities of the $Si_{3}N_{4}$ layers to the PVD a-C on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The $H_2$ and $CH_{2}F_{2}$ flow ratio was found to play a critical role in determining the process window for infinite $Si_{3}N_{4}$/PVDa-C etch selectivity, due to the change in the degree of polymerization. Etching of ArF PR/BARC/$SiO_x$/PVDa-C/$Si_{3}N_{4}$ MLR structure supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the $Si_{3}N_{4}$ layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.