• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.958-962
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• 2002

This paper reports on the fabrication of free-standing microstructures by DRIE (deep reactive ion etching). SOI (Si-on-insulator) structures with buried cavities are fabricated by SDB (Si-wafer direct bonding) technology and electrochemical etch-stop. The cavity was formed the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the formed cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing (100$0^{\circ}C$, 60 min.), the SDB SOI structure with a accurate thickness and a good roughness was thinned by electrochemical etch-stop in TMAH solution. Finally, it was fabricated free-standing microstructures by DRIE. This result indicates that the fabrication technology of free-standing microstructures by combination SDB, electrochemical etch-stop and DRIE provides a powerful and versatile alternative process for high-performance bulk micromachining in MEMS fields.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.216-216
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• 2009

This paper describes a novel processing technique for the fabrication of polymer-derived SiCN (silicone carbonitride) microstructures for extreme microelectromechanical system (MEMS) applications. A polydimethylsiloxane (PDMS) mold was formed on an SU-8 pattern using a standard UV photolithographic process. Next, the liquid precursor, polysilazane, was injected into the PDMS mold to fabricate free-standing SiCN microstructures. Finally, the solid polymer SiCN microstructure was cross-linked using hot isostatic pressure at $400^{\circ}C$ and 205 bar. The optimal pyrolysis and annealing conditions to form a ceramic microstructure capable of withstanding temperatures over $1400^{\circ}C$ were determined. Using the optimal process conditions, the fabricated SiCN ceramic microstructure possessed excellent characteristics includingshear strength (15.2 N), insulation resistance ($2.163{\times}10^{14}\;{\Omega}$, and BDV (1.2 kV, minimum). Since the fabricated ceramic SiCN microstructure has improved electrical and physical characteristics compared to bulk Si wafers, it may be applied to harsh environments and high-power MEMS applications such as heat exchangers and combustion chambers.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.29-33
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• 1997

Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.

• 멤브레인
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• 제30권3호
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• pp.149-157
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• 2020

유기 양이온과 유기/무기 음이온을 포함하고 있는 이온성 액체는 저온 용융 염의 종류이며 이산화탄소 분리 기능에 대한 잠재력을 갖고 있다. 지구 온난화와 기후 변화의 문제점을 극복하기 위해 이온성 액체를 기반으로 한 막을 개발하여 연도가스에서 이산화탄소를 걸러내는 연구가 활발히 진행되고 있다. 본 리뷰에서는 홀로 설 수 있는 중합 이온성 액체(PIL), 이온성 액체와 이온성 액체 복합 막의 혼합의 기술이 논의될 것이다. 새로운 이온성 액체의 모노머 도입, 그리고 중합 이온성 액체 막과 복합 막의 미세구조변형은 막의 기계적 특성을 향상시켜 가스투과율과 선택도를 크게 향상 시키는데 시용되어 왔다. 이온성 액체 모너머의 양이온과 음이온의 다양한 변형은 막의 가스 분리성에 큰 영향이 있다.