Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication of 3-Dimensional Microstructures for Bulk Micromachining by SDB and Electrochemical Etch-Stop

SDB와 전기화학적 식각정지에 의한 벌크 마이크로머신용 3차원 미세구조물 제작

  • 정귀상 (동서대학교 정보시스템공학부) ;
  • 김재민 (동서대학교 정보시스템공학부) ;
  • 윤석진 (한국과학기술연구원 박막기술연구센터)
  • Published : 2002.11.01
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Abstract

This paper reports on the fabrication of free-standing microstructures by DRIE (deep reactive ion etching). SOI (Si-on-insulator) structures with buried cavities are fabricated by SDB (Si-wafer direct bonding) technology and electrochemical etch-stop. The cavity was formed the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the formed cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing (100$0^{\circ}C$, 60 min.), the SDB SOI structure with a accurate thickness and a good roughness was thinned by electrochemical etch-stop in TMAH solution. Finally, it was fabricated free-standing microstructures by DRIE. This result indicates that the fabrication technology of free-standing microstructures by combination SDB, electrochemical etch-stop and DRIE provides a powerful and versatile alternative process for high-performance bulk micromachining in MEMS fields.

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References

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