• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.161-162
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• 2008

본 논문에서는 820.11n 규격에 적합한 Fractional-N 주파수 합성기를 설계하였다. 본 논문에서 설계한 주파수 합성기의 특징은 PFD(Phase Frequency Detector) 뒷단에 잔여 펄스를 제거하는 Pulse Remover를 연결하여 이중 궤환 Charge Pump의 안정도를 향상시켰으며, Charge Pump에서 동시에 발생하는 Up/Down 전류로 인한 Spike성 전류를 없앰으로서 스퓨리어스를 최소화 시켰다. Pulse Removed RFD를 사용함으로서 발생하는 PFD Deadzon문제는 2N+2분주와 2N-2분주기를 3차의 ${\Delta}{\Sigma}$ Modulator가 선택해줌으로 해결하였다. 삼성 0.18u 공정을 이용하여 설계 하였으며 각 블록은 Cadence spectre를 이용하여 검증하였다.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1386-1388
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• 2008

본 논문에서는 820.11n 규격에 적합한 Fractional-N 주파수 합성기를 설계하였다. 본 논문에서 설계한 주파수 합성기의 특징은 PFD(Phase Frequency Detector) 뒷단에 잔여 펄스를 제거하는 Pulse Remover를 연결하여 이중 궤환 Charge Pump의 안정도를 향상시켰으며, Charge Pump에서 동시에 발생하는 Up/Down 전류로 인한 Spike성 전류를 없앰으로서 스퓨리어스를 최소화 시켰다. Pulse Removed PFD를 사용함으로서 발생하는 PFD Deadzon문제는 2N+2분주와 2N-2분주기를 3차의 ${\Delta}{\Sigma}$ Modulator가 선택해줌으로 해결하였다. 삼성 0.18u 공정을 이용하여 설계 하였으며 각 블락은 Cadence spectre 를 이용하여 검증하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.60-67
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• 2008

A low-power 2.4GHz fractional-N frequency synthesizer has been designed for 2.4GHz ISM band applications such as Bluetooth, Zigbee, and WLAN. To achieve low-power characteristic, the design has been focused on the power optimization of power-hungry blocks such as VCO, prescaler, and ${\Sigma}-{\Delta}$ modulator. An NP-core type VCO is adopted to optimize both phase noise and power consumption. Dynamic D-F/Fs with no static DC current are employed in designing the low-power prescaler circuit. The ${\Sigma}-{\Delta}$ modulator is designed using a modulus mapping circuit for reducing hardware complexity and power consumption. The designed frequency synthesizer which was fabricated using a $0.18{\mu}m$ CMOS process consumes 7.9mA from a single 1.8V supply voltage. The experimental results show that a phase noise of -118dBc/Hz at 1MHz offset, the reference spur of -70dBc at 25MHz offset, and the channel switching time of $15{\mu}s$ over 25MHz transition have been achieved. The designed chip occupies an area of $1.16mm^2$ including pads where the core area is only $0.64mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.75-82
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• 2010

This paper presents a wideband ${\Delta}{\Sigma}$ fractional-N frequency synthesizer for a multi-band single chip CMOS RFIC transceivers. A wideband VCO utilizes a 6-bit switched capacitor array bank for 2340~3940 MHz frequency range. VCO frequency calibration circuit is designed for optimal capacitor bank code selection before phase locking process. It finishes the calibration process in $2{\mu}s$ over the whole frequency band. The LO generation block has selectable multiple division ratios of ${\div}2$, ${\div}16$, and ${\div}32$ to generate LO I/Q signals for T-DMB/DAB/FM Radio systems in L-Band (1173~1973 MHz), VHF-III (147~246 MHz), VFH-II (74~123 MHz), respectively. The measured integrated phase noise is quite low as it is lower than 0.8 degree RMS over the whole frequency band. Total locking time of the ${\Delta}{\Sigma}$ frequency synthesizer including VCO frequency calibration time is less than $50{\mu}s$. The wideband ${\Delta}{\Sigma}$ fractional-N frequency synthesizer is fabricated in $0.13{\mu}m$ CMOS technology, and it consumes 15.8 mA from 1.2 V DC supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.4
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• pp.32-38
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• 2011

This paper describes implementation of the 5.0GHz RF frequency synthesizer with 0.18${\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4 USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma}-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get excellent performance of high speed and wide tuning range, N-P MOS core structure and 12 step cap banks have been used in design of the VCO. The chip area including pads for testing is $1.1{\times}0.7mm^2$, and the chip area only core for IP in SoC is $1.0{\times}0.4mm^2$. Through analysing of the fabricated frequency synthesizer, we can see that it has wide operation range and excellent frequency characteristics.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.45 no.6
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• pp.87-93
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• 2008

This paper describes implementation of the 5.0GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4 USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma}-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.1*0.7mm^2$, and the chip area only core for IP in SoC is $1.0*0.4mm^2$. Through comparing and analysing of the designed two kind of the frequency synthesizer, we can conclude that if we improve a litter characteristics there is no problem to use their as IPs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.9
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• pp.74-80
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• 2009

This paper describes a $2{\sim}6GHz$ CMOS frequency synthesizer that employs only one LC-tank voltage controlled oscillator (VCO). For wide-band operation, optimized LO signal generator is used. The LC-tank VCO oscillating in $6{\sim}8GHz$ provides the required LO frequency by dividing and mixing the VCO output clocks appropriately. The frequency synthesizer is based on a fractional-N phase locked loop (PLL) employing third-order 1-1-1 MASH type sigma-delta modulator. Implemented in a $0.18{\mu}m$ CMOS technology, the frequency synthesizer occupies the area of $0.92mm^2$ with of-chip loop filter and consumes 36mW from a 1.8V supply. The PLL is completed in less than $8{\mu}s$. The phase noise is -110dBC/Hz at 1MHz offset from the carrier.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.342-348
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• 2015

This paper presents a 1.9-GHz digital ${{\Delta}{\Sigma}}$ fractional-N PLL with a finite impulse response (FIR) filter embedded for noise suppression. The proposed digital implementation of FIR provides a simple method of increasing the number of taps without complicated calculation for gain matching. This work demonstrates 32 tap FIR filtering for the first time and successfully filtered the in-band phase noise generated from delta-sigma modulator (DSM). Design considerations are also addressed to find the optimum number of taps when the resolution of time-to-digital converter (TDC) is given. The PLL, fabricated in $0.11-{\mu}m$ CMOS, achieves a well-regulated in-band phase noise of less than -100 dBc/Hz for the entire range inside the bandwidth of 3 MHz. Compared with the conventional dual-modulus division, the proposed PLL shows an overall noise suppression of about 15dB both at in-band and out-of-band region.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.5
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• pp.49-54
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• 2009

This paper describes implementation of the 1.9GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma }-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.2{\times}0.7mm^2$, and the chip area only core for IP in SoC is $1.1{\times}0.4mm^2$. The test results show that there is no special spurs except -63.06dB of the 6MHz reference spurs in the PLL circuitry. There is good phase noise performance like -116.17dBc/Hz in 1MHz offset frequency.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.4
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• pp.707-714
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• 2012

After a single-stage, second-order, multiple-feedback ${\Delta}-{\Sigma}$ modulator and a two-stage, second-order MASH ${\Delta}-{\Sigma}$ modulator were analyzed and simulated using Simulink and Matlab and their characteristics were compared, the following result was obtained: 1) The two ${\Delta}-{\Sigma}$ modulators do not have group delay distortion. 2) The characteristics of the noise shaping are nearly identical. As a result of the noise shaping, the power spectral densities have slope of 40 dB/dec. 3) There was no spurious tone. 4) The input range of the two modulators is from -1 to +1 in common. 5) Because the output of the two-stage MASH modulator is 2-bits (4-levels), design of frequency dividers and charge pumps of PLL are more demanding.