• Applied Microscopy
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• 제47권3호
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• pp.86-94
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• 2017

In this study, we will describe a new design of carbon nanotubes tip. Single-walled carbon nanotubes produced using high-pressure CO over Fe particles (HiPCO) at CNI, Houston, TX used in this study. These tips were manufactured by employing a drawing technique using glass puller. Field electron microscopies with tips (cathode) to screen (Anode) separation of ~10 mm was used to characterize the electron emitters. The system was evacuated down to base pressure of (${\sim}10^{-8}$ mbar) when baked at up to (${\sim}200^{\circ}C$) over night. An electron field emission patterns, as well as current versus voltage characteristics and Fowler-Nordheim plots, are discussed.

• 한국결정성장학회지
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• 제14권5호
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• pp.211-214
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• 2004

Carbon nanofiber bundles were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition system. These bundles were vertically well-grown under the high negative bias voltage condition. The bundles were composed of the individual carbon nanofiber having less than 100 nm diameters. Turn-on voltage of the field emission was measured around 0.8 V/$\mu\textrm{m}$. Fowler-Nordheim plot of the measured values confirmed the field emission characteristic of the measured current.

• 한국진공학회지
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• 제9권2호
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• pp.122-129
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• 2000

Mo이 코팅된 유리기판 상에 전기영동법으로 도포된 유리화 비정형 탄소분말의 전계방출 특성을 조사하였다. 탄소의 $sp^2$결합만으로 이루어진 유리화 비정형 탄소는 전계방출을 얻기 위한 초기화 공정 없이도 규칙적인 전계방출 거동을 보이고 있었다. 전자의 방출이 시작되는 임계전장의 크기는 3에서 4 MV/m 구간의 값을 가지고 있었으며, Fowler-Nordheim plot로부터 평가된 effective work function은 약 0.06 eV였다. 전류전압거동의 반복측정에 의해 관찰된 바와 같이 전계방출의 안정성 면에서 유리화 비정형 탄소는 Si tip보다 우수하였으며, 도포된 전체면적에서 전면발광의 가능성을 확인할 수 있었다. 이러한 결과는 탄소계 물질에서 관찰되는 전계방출이 탄소의 $sp^3$결합과 밀접하게 관련되어 있지 않으며, 전자가음극물질의 표면으로 이동하는데 필요한 전기전도성, 혹은 기판과 음극물질 계면에서의 전자이동 등이 전계방출의 거동을 결정하는 중요한 요인임을 보여주고 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.71-74
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• 1996

Ta$_2$O$_{5}$ film ale recognized as promising capacitor dielectric for future DRAM\`s. The electrical properties of Ta$_2$O$_{5}$films greatly depend on the heating condition. In the practical fabrication process, several annealing process, such as the annealing of Al in H$_2$(about 40$0^{\circ}C$) and reflow of BPSG (borophosphosilicate glass) film in $N_2$(about 80$0^{\circ}C$), exist after deposition of Ta$_2$O$_{5}$ film. In this paper, we describe the temperature effect on the electrical properties of W/Ta$_2$O$_{5}$/Si structure. The thin film of Ta$_2$O$_{5}$ and tungsten have been deposited on p-si(100) wafer using the sputtering system. The heating temperature was varied from 500 to 90$0^{\circ}C$ in $N_2$for 30min and The degree of temperature is 100\`C. In a log(J/E$^2$) Vs 1/E plot of typical I-V data, we find a linear relationship for the temperature of 500, $600^{\circ}C$ and as deposition. This could indicate Fowler-Nordheim tunneling as the dominant mode of current transports. However, we can not find a linear relationship for the temperature above $700^{\circ}C$. This could not indicate Fowler-Nordheim tunneling as the dominant mode of current transport. The high frequency (1MHz) capacitance-voltage (C-V) of W/Ta$_2$O$_{5}$/Si Capacitor were investigated on the basis of shift in the threshold voltage and dielectric constant. The magnitude of the threshold voltage and dielectric constant depends on the heating temperature, and increases with heating temperature.temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.1039-1040
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• 2002

For the I-V modeling of sharp tip arrays and nanostructured planar emitters, we propose a new and much practical I-V relation including tip height and radius by considering a statistical distribution of tip radius. Frequently observed nonlinearity of Fowler-Nordheim plot for sharp tip and tip arrays was successfully simulated and then, an application example was provided to extract relevant emission-governing parameters of sharp tip.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.131-132
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• 2000

We prepared Si emitters coated with a MOCVD $CoSi_2$ layer to improve the emission properties. The $CoSi_2$ layer was grown on Si field emitters in situ by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt at 600 ${\sim}$ $650^{\circ}C$. The $CoSi_2$ coated field emitters showed enhanced emission properties of current-voltage characteristics, which were due to the increase of emitting area from Fowler-Nordheim plot. And the emission current fluctuation decreased due to the chemically stable surface properties of $CoSi_2$.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.158-164
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• 2002

본 연구에서는 탄소나노튜브를 직류 바이어스가 인가된 유도결합형 플라즈마 열선 화학기상증착 장치를 이용하여 58$0^{\circ}C$ 이하의 저온에서 유리기판의 변형 없이 수직 배향 시켰다. 탄소나노튜브의 성장을 위해 강화유리기판 위에 전도층으로 Cr을 증착하였고, 그 위에 촉매 층으로 Ni을 순차적으로 RF magnetron cputtering 장치를 이용하여 증착 시켰다. 성장 시 탄소나노튜브의 저온에서의 좋은 특성을 위해 높은 온도에서의 열분해를 목적으로 텅스텐 필라멘트를 이용하였으며, 수직 배향 시키기 위해서 직류 바이어스를 이용하였다. 성장된 탄소나노튜브는 수직적으로 잘 배향 되었으며, 저온에서 좋은 특성을 보였다. 탄소나노튜브의 특성화에는 SEM, TEM을 관찰하였으며, Raman spectroscopy를 이용하여 흑연화도를 측정하였고, 전계방츨 특성은 전류 전압 특성곡선과 Fowler-Nordheim plots를 이용하였다.

• 한국세라믹학회지
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• 제37권1호
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• pp.6-11
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• 2000

Electron emission from the Pb(ZrxTi1-x)O3 ferroelectrics by pulsed electric field has been investigated as a function of Zr/Ti ratios such as 35/65, 50/50 and 65/35 below 250kV/cm. Electrons were emitted regardless of the applied field polarity to the rear electrode. When the negative field was applied to the rear electrode, the electron emission charge was more stable. It was proved that the electrons were emitted at the edge of the upper electrode. The emission charge increased in order of 65/35>50/50>35/65. The electron emission characteristics were dependent on the ferroelectric properties such as polarization and coercive field. The emission charge and emission threshold field were affected by the polarization change and the coercive field, respectively. This result explains that the electron emission is a field emission with polarization induced surface potential by a modified Fowler-Nordheim plot of emission charge.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.129-130
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• 2009

The P/E characteristics of $HfO_2$ CTF memory capacitor with $SiO_2/HfO_2/Al_2O_3$(OHA) engineered tunnel barrier were investigated. After a growth of thermal oxide with a thickness of 2 nm, 1 nm $HfO_2$ and 3 $Al_2O_3$ layers were deposited by atomic layer deposition (ALD) system. The band offset was calculated by analysis of conduction mechanisms through Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. Moreover the PIE characteristics of $HfO_2$ CTF memory capacitor with OHA tunnel barrier was presented.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.262-263
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• 2008

The Metal-Insulator-Silicon (MIS) capacitors with $SiO_2$ and high-k dielectric were investigated. The high-k dielectrics were obtained by atomic layer deposit (ALD) system. The electrical characteristics were investigated by measuring the current-voltage (I-V) characteristics. The conduction mechanisms were analyzed by using the Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. As a result, the MIS capacitors with high-k dielectrics have lower leakage current densities than conventional tunnel-barrier with $SiO_2$ dielectrics.