• Applied Microscopy
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• v.47 no.3
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• pp.86-94
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• 2017

In this study, we will describe a new design of carbon nanotubes tip. Single-walled carbon nanotubes produced using high-pressure CO over Fe particles (HiPCO) at CNI, Houston, TX used in this study. These tips were manufactured by employing a drawing technique using glass puller. Field electron microscopies with tips (cathode) to screen (Anode) separation of ~10 mm was used to characterize the electron emitters. The system was evacuated down to base pressure of (${\sim}10^{-8}$ mbar) when baked at up to (${\sim}200^{\circ}C$) over night. An electron field emission patterns, as well as current versus voltage characteristics and Fowler-Nordheim plots, are discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.211-214
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• 2004

Carbon nanofiber bundles were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition system. These bundles were vertically well-grown under the high negative bias voltage condition. The bundles were composed of the individual carbon nanofiber having less than 100 nm diameters. Turn-on voltage of the field emission was measured around 0.8 V/$\mu\textrm{m}$. Fowler-Nordheim plot of the measured values confirmed the field emission characteristic of the measured current.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.122-129
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• 2000

Field emission behavior from vitreous carbon powders deposited on Mo coated glass by electro-phoretic method was investigated. Although the vitreous carbon has only $sp^2$ hybridized carbon bond, we could observe an excellent field emission behavior. Reproducible electron emission was observed without initiation process which is known to be needed in most carbon cathode materials. Critical electric field for electron emission was in the range from 3 to 4 MV/m. The effective work function was estimated to be about 0.06 eV, as obtained from the slope of Fowler-Nordheim plot. The stability of the emission behavior characterized by repeated I-V measurements, was much superior to the Si tips. We observed the possibility of full area light emission in vitreous carbon materials. This results showed that the field emission is not intimately related to the $sp^3$ hybridization of carbon, but the electrical properties of cathod/electrode interface or the conductivity of the cathode materials which required for the electron transport to the cathode surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.71-74
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• 1996

Ta$_2$O$_{5}$ film ale recognized as promising capacitor dielectric for future DRAM\`s. The electrical properties of Ta$_2$O$_{5}$films greatly depend on the heating condition. In the practical fabrication process, several annealing process, such as the annealing of Al in H$_2$(about 40$0^{\circ}C$) and reflow of BPSG (borophosphosilicate glass) film in $N_2$(about 80$0^{\circ}C$), exist after deposition of Ta$_2$O$_{5}$ film. In this paper, we describe the temperature effect on the electrical properties of W/Ta$_2$O$_{5}$/Si structure. The thin film of Ta$_2$O$_{5}$ and tungsten have been deposited on p-si(100) wafer using the sputtering system. The heating temperature was varied from 500 to 90$0^{\circ}C$ in $N_2$for 30min and The degree of temperature is 100\`C. In a log(J/E$^2$) Vs 1/E plot of typical I-V data, we find a linear relationship for the temperature of 500, $600^{\circ}C$ and as deposition. This could indicate Fowler-Nordheim tunneling as the dominant mode of current transports. However, we can not find a linear relationship for the temperature above $700^{\circ}C$. This could not indicate Fowler-Nordheim tunneling as the dominant mode of current transport. The high frequency (1MHz) capacitance-voltage (C-V) of W/Ta$_2$O$_{5}$/Si Capacitor were investigated on the basis of shift in the threshold voltage and dielectric constant. The magnitude of the threshold voltage and dielectric constant depends on the heating temperature, and increases with heating temperature.temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.1039-1040
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• 2002

For the I-V modeling of sharp tip arrays and nanostructured planar emitters, we propose a new and much practical I-V relation including tip height and radius by considering a statistical distribution of tip radius. Frequently observed nonlinearity of Fowler-Nordheim plot for sharp tip and tip arrays was successfully simulated and then, an application example was provided to extract relevant emission-governing parameters of sharp tip.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.131-132
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• 2000

We prepared Si emitters coated with a MOCVD $CoSi_2$ layer to improve the emission properties. The $CoSi_2$ layer was grown on Si field emitters in situ by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt at 600 ${\sim}$ $650^{\circ}C$. The $CoSi_2$ coated field emitters showed enhanced emission properties of current-voltage characteristics, which were due to the increase of emitting area from Fowler-Nordheim plot. And the emission current fluctuation decreased due to the chemically stable surface properties of $CoSi_2$.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.158-164
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• 2002

본 연구에서는 탄소나노튜브를 직류 바이어스가 인가된 유도결합형 플라즈마 열선 화학기상증착 장치를 이용하여 58$0^{\circ}C$ 이하의 저온에서 유리기판의 변형 없이 수직 배향 시켰다. 탄소나노튜브의 성장을 위해 강화유리기판 위에 전도층으로 Cr을 증착하였고, 그 위에 촉매 층으로 Ni을 순차적으로 RF magnetron cputtering 장치를 이용하여 증착 시켰다. 성장 시 탄소나노튜브의 저온에서의 좋은 특성을 위해 높은 온도에서의 열분해를 목적으로 텅스텐 필라멘트를 이용하였으며, 수직 배향 시키기 위해서 직류 바이어스를 이용하였다. 성장된 탄소나노튜브는 수직적으로 잘 배향 되었으며, 저온에서 좋은 특성을 보였다. 탄소나노튜브의 특성화에는 SEM, TEM을 관찰하였으며, Raman spectroscopy를 이용하여 흑연화도를 측정하였고, 전계방츨 특성은 전류 전압 특성곡선과 Fowler-Nordheim plots를 이용하였다.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.6-11
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• 2000

Electron emission from the Pb(ZrxTi1-x)O3 ferroelectrics by pulsed electric field has been investigated as a function of Zr/Ti ratios such as 35/65, 50/50 and 65/35 below 250kV/cm. Electrons were emitted regardless of the applied field polarity to the rear electrode. When the negative field was applied to the rear electrode, the electron emission charge was more stable. It was proved that the electrons were emitted at the edge of the upper electrode. The emission charge increased in order of 65/35>50/50>35/65. The electron emission characteristics were dependent on the ferroelectric properties such as polarization and coercive field. The emission charge and emission threshold field were affected by the polarization change and the coercive field, respectively. This result explains that the electron emission is a field emission with polarization induced surface potential by a modified Fowler-Nordheim plot of emission charge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.129-130
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• 2009

The P/E characteristics of $HfO_2$ CTF memory capacitor with $SiO_2/HfO_2/Al_2O_3$(OHA) engineered tunnel barrier were investigated. After a growth of thermal oxide with a thickness of 2 nm, 1 nm $HfO_2$ and 3 $Al_2O_3$ layers were deposited by atomic layer deposition (ALD) system. The band offset was calculated by analysis of conduction mechanisms through Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. Moreover the PIE characteristics of $HfO_2$ CTF memory capacitor with OHA tunnel barrier was presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.262-263
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• 2008

The Metal-Insulator-Silicon (MIS) capacitors with $SiO_2$ and high-k dielectric were investigated. The high-k dielectrics were obtained by atomic layer deposit (ALD) system. The electrical characteristics were investigated by measuring the current-voltage (I-V) characteristics. The conduction mechanisms were analyzed by using the Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. As a result, the MIS capacitors with high-k dielectrics have lower leakage current densities than conventional tunnel-barrier with $SiO_2$ dielectrics.