• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.6
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• pp.443-453
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• 2017

In flip chip technology, the conventional solder bump has been replaced with a copper (Cu) pillar bump owing to its higher input/output (I/O) density, finer pitch, and higher reliability. However, Cu pillar bump technology faces several issues, such as interconnect shorting and higher low-k stress due to stiffer Cu pillar structure when the conventional reflow process is used. Therefore, the thermal compression bonding (TCB) process has been adopted in the flip chip attachment process in order to reduce the package warpage and stress. In this study, we investigated the package warpage induced during the TCB process using a numerical analysis. The warpage of the TCB process was compared with that of the reflow process.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2006.10a
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• pp.47-66
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• 2006

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.53-58
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• 2013

An innovative packaging solution, Flip Chip with Copper (Cu) Column bond on lead (BOL) Enhanced Process (fcCuBE$^{(R)}$) delivers a cost effective, high performance packaging solution over typical bond on capture pad (BOC) technology. These advantages include improved routing efficiency on the substrate top layer thus allowing conversion functionality; furthermore, package cost is lowered by means of reduced substrate layer count and removal of solder on pad (SOP). On the other hand, as electronic packaging technology develops to meet the miniaturization trend from consumer demand, reliability testing will become an important issue in advanced technology area. In particular, electromigration (EM) of flip chip bumps is an increasing reliability concern in the manufacturing of integrated circuit (IC) components and electronic systems. This paper presents the results on EM characteristics on BOL and BOC structures under electrical current stressing in order to investigate the comparison between two different typed structures. EM data was collected for over 7000 hours under accelerated conditions (temperatures: $125^{\circ}C$, $135^{\circ}C$, and $150^{\circ}C$ and stress current: 300 mA, 400 mA, and 500 mA). All samples have been tested without any failures, however, we attempted to find morphologies induced by EM effects through cross-sectional analysis and investigated the interfacial reaction characteristics between BOL and BOC structures under current stressing. EM damage was observed at the solder joint of BOC structure but the BOL structure did not show any damage from the effects of EM. The EM data indicates that the fcCuBE$^{(R)}$ BOL Cu column bump provides a significantly better EM reliability.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.245-246
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• 2008

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.49-52
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• 2022

As the difficulty of flip chip products increase, interest in stable PKG material technology from the viewpoint of reliability is increasing. Currently, the representative of poor reliability that are mainly occurring in flip chip PKG are Sn bridge and Cu dendrite. Two type defects are caused by void generated by the flux residue around the bump. In order to essentially minimize the risk of this type of reliability failure, the linkage between the composition of Molded Under-fill (MUF) and flux, which is related material, was reviewed. In this study, the correlation between base resin and filler, which is the main component of MUF, and flux, was defined, and the material composition design was carried out by refer to lesson learn. With the current material composition, it was confirmed that moisture absorption reliability 85%/85%/24hrs pass result and void did not occur during destructive analysis, and developed MUF has shown flux immunity improving result in flip Chip PKG. We think this study can be used in yield enhancement of flip chip process and give insights to study in compatibility between MUF and flux.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.75-80
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• 2013

According to advance of electronic packaging technology, electronic package becomes smaller. Miniaturization of package causes the temperature rise of package. This can degrade life of electronic device and generate the failure of electronic system. In this study, we proposed a new semi-embedded structure with micro pattern for maximizing heat dissipation. A proposed structure showed the characteristics which have maximum temperature lower than $20^{\circ}C$ compared with conventional structure. And also, in view of thermal stress and strain, our structure showed a remarkably low value compared with other ones. We expect that the new structure proposed in this work can be applied to an flip-chip package of the future.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.09a
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• pp.219-225
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• 2002

This paper presents a novel "bumpless flip chip package"for cost! performance driven devices. Using the conventional electroplating and etching processes, this package enables the production of fine pitch BGA up to 256 I/O with single layer routing. An array of circuitry down to $25-50{\mu}{\textrm}{m}$ line/space is fabricated to fan-in and fan-out of the bond pads without using bumps or substrate. Various types of joint methods can be applied to connect the fine trace and the bond pad directly. The resin-filled terminal provides excellent compliancy between package and the assembled board. More interestingly, the thin film routing is similar to wafer level packaging whereas the fan-out feature enables high lead count devices to be accommodated in the BGA format. Details of the design concepts and processing technology for this novel package are discussed. Trade offs to meet various cost or performance goals for selected applications are suggested. Finally, the importance of design integration early in the technology development cycle with die-level and system-level design teams is highlighted as critical to an optimal design for performance and cost.

• Journal of the Korean Society of Industry Convergence
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• v.12 no.4
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• pp.215-219
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• 2009

A packaging technology based on flip-chip bonding and Pb-free solder for silicon pressure sensors on printed circuit board (PCB) is presented. First, the bump formation process was conducted by Pb-free solder. Ag-Sn-Cu solder and the pressed-screen printing method were used to fabricate solder bumps. The fabricated solder bumps had $189-223{\mu}m$ width, $120-160{\mu}m$ thickness, and 5.4-6.9 standard deviation. Also, shear tests was conducted to measure the bump shear strength by a Dage 2400 PC shear tester; the average shear strength was 74 g at 0.125 mm/s of test speed and $5{\mu}m$ shear height. Then, silicon pressure sensor packaging was implemented using the Pb-free solder and bump formation process. The characteristics of the pressure sensor were analogous to the results obtained when the pressure sensor dice are assembled and packaged using the standard wire-bonding technique.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.45-52
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• 2011

It is known that test methods to evaluate solder joint reliability are die shock test, die shear test, 3points bending test, and thermal shock test. The present study investigated the effects of failure mode on 3 types (as-reflowed, $85^{\circ}C$/85%RH treatment, and $150^{\circ}C$/10hr aging) of solder joints for flip-chip BGA package by using various test methods. The test methods and configurations are reported in detail, i.e. die shock, die shear, 3points bending, and thermal shock test. We focus on the failure mode of solder joints under various tests. The test results indicate that die shock and die shear test method can reveal brittle fracture in flip-chip ball grid array (FCBGA) packages with higher sensitivity.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.59-65
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• 2011

According to the trends of electronic package to be smaller, thinner and more integrative, Flip Chip Ball Grid Array (FCBGA) become more used for mobile phone. However, the flip chip necessarily generate the heat by the electrical resistance and generated heat is increased due to reduced distribution area of the heat in accordance with the miniaturization trend of the package. Thermal issues can result in problems of devices that are sensitive to temperature and stress. Then the heat can generate problems to the system. In this paper, in order to improve the thermal issues of FCBGA, thermal characteristics of FCBGA was analyzed qualitatively by using the general heat transfer module of Comsol 3.5a and In order to solve thermal issues, flip chip with new micro structure is proposed by the simulation. and also by comparing existing model and analyzing variables such as pitch, height of the pattern and shape of the heat spreader, the improvement of heat dissipation characteristics about 18% was confirmed.