• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.12-15
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• 2018

InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.845-848
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• 2002

The study of photoconductor materials is demanded for development for flat-panel digital x-ray Imager. In this paper, We investigated the feasibility of application as x-ray image sensor using Cd(Zn)Te compound with high stopping power on high radiation. These Cd(Zn)Te samples were fabricated by vacuum thermal evaporation method to large area deposition and investigated I-V measurement as applied voltage. The experimental results show that the additional injection Zn in CdTe film reduced the leakage current, for the $Cd_{0.85}Zn_{0.15}Te$ detector, the net charge had the highest value as $144.58pC/cm^2$ at 30 V.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.16-20
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• 2002

The high bias voltage associated with the thick layer (typically 500-1000 ㎛) of selenium required to have an acceptable x-ray absorption in radiography and fluoroscopy applications may have some practical inconvenience. A hybrid x-ray detector with zinc sulfide-amorphous selenium structure has been developed to improve the x-ray sensitivity of a a-Se based flat-panel digital imaging detector. Photoluminescence(PL) characteristic of a ZnS:Ag phosphor layer showed a light emission peak centered at about 450 nm, which matches the sensitivity spectrum of selenium. The dark current of the hybrid detector showed similar characteristics with that of a a-Se detector. The x-ray sensitivity of hybrid and a-Se x-ray detector was 345 pC/㎠/mR and 295 pC/㎠/mR at an applied voltage of 10 V/㎛, respectively. The purpose of this study was to evaluate the pertinence of a solution using a thin selenium layer, as a photosensitive converter, with a thick coating of silver doped zinc sulfide phosphor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.75-78
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• 2003

In recent years, there has been keen interest in developing flat panel detectors for all modalities of radiology, including gerneral radiology, fluoroscopy, electronic portal imaging, and mammography. In this paper, we report the new hybrid x-ray detector consisted of ZnS(Ag) photoemission layer and a-Se photoconductor layer to resolve problem of conventional x-ray detector such as the direct detector and the indirect detector. To design the structure of ZnS(Ag)/a-Se detector, the penetrated energy spectrum and absorption fraction was estimated using MCNP 4C code. Also, we carried out the experiment to demonstrate the result of MCNP 4C code. Experimental results showed that the absorption fraction of $500{\mu}m$-ZnS(Ag) film was above 87%, 75% at 60 and 80 kVp. As a results, we can determined the thickness of suitable phosphor and the thickness of photoconductor.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.374-374
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• 2014

의료용 X-ray는 과거 analog 방식과, 연구가 진행 중이며 현재 많이 사용되고 있는 digital 방식으로 나누어진다. 최근, 광도전체와 형광체 기반의 flat panel X-ray detector의 발전에 따른 상용화가 이루어지고 있으며, 많은 발전 가능성이 제기되고 있다. flat panel X-ray detector 검출방식은 direct method (직접 방식)와 indirect method (간접 방식)로 나누어진다. 본 연구는 일반적으로 상용화 되어있는 amorphous seleinum (비정질 셀레늄)의 큰 일함수에 의한 저 해상력이라는 단점을 보완하기 위해, 작은 일함수를 가지는 물질을 사용하여, 영상을 얻을 시에 높은 해상력으로 표현할 수 있도록 하고, 원자번호가 높은 물질을 사용하여 X-ray 흡수율을 높일 수 있도록 기존 direct method에 많이 사용되고 있는 amorphous seleinum 기반 digital X-ray detector가 아닌, 이러한 장점을 충족시킬 수 있는 PbI2 물질 층을 사용하여 시편을 제작 하였다. PbI2를 같은 두께로 올린 후, 물질 층 상부에 Au 전극 면적을 다른 size로 제작한 시편으로 X-ray에 노출 시켰다. 이는 상부 전극 size 차이에 따른 신호 차이를 측정하여 전기적 특성을 평가하기 위한 것이다. 전도성을 띠고 있는 ITO (Indium - Tin - Oxide) glass를 이용하여 screen printing 방법으로 제작하였다. PbI2층을 약 160~180 um두께, $3cm{\times}3cm$ size로 5개 제작하였으며, 상부 전극으로는 Au를 진공 증착 시켰다. 상부 전극 size는 각각 시편 5개에 $0.5cm{\times}0.5cm$, $1cm{\times}1cm$, $1.5cm{\times}1.5cm$, $2cm{\times}2cm$, $2.5cm{\times}2.5cm$로 PbI2 물질 층 중앙에 증착 시켰다. 이러한 설정으로 X-ray 노출 시 관찰할 수 있는 PbI2의 전기적인 특성을 평가할 수 있었다. 관전압을 40 kVp, 60 kVp, 80 kVp, 100 kVp, 120 kVp, 140 kVp로 설정하고, 관전류는 100 mA로 설정하였으며, Dark current, Sensitivity를 측정하였다. Dark current와 Sensitivity를 측정한 뒤, 그 값을 이용하여 SNR (신호 대 잡음 비)값을 구해보았다.실험 결과 단위면적당 signal과 SNR을 분석할 수 있었다. 80 kVp로 기준을 잡고 결과 값을 보면 $0.5cm{\times}0.5cm$ 시편에서 2.92 nC/cm2, $2.5cm{\times}2.5cm$ 시편에서 0.84 nC/cm2로 상부 전극 크기가 작을수록 더 좋은 신호를 측정할 수 있었다. 똑같은 기준에서 SNR을 계산 해 보았을 때, $0.5cm{\times}0.5cm$ 시편에서 6.46, $2.5cm{\times}2.5cm$ 시편에서 1.91로 SNR역시 상부 전극 크기가 작을수록 더 큰 값을 확인할 수 있었다. 이러한 결과는 edge-effect의 영향으로 인해 나온 결과라고 할 수 있다. 이러한 실험 결과, detector 제작 시, 같은 물질을 사용하여 더 높은 효율을 내기 위해서는 큰 size의 상부 전극 보다는 작은 size의 상부 전극을 증착 시키는 것이 전기적 특성을 더욱 효율적으로 평가할 수 있을 것이라고 사료된다.

• Journal of Biomedical Engineering Research
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• v.29 no.5
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• pp.392-399
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• 2008

Thin-film transistor (TFT) arrays for an x-ray detector require quite different design concept from that of the conventional active-matrix liquid crystal devices (AM-LCDs). In this paper anew design of TFT array which uses only SiNx for passivation layer is described to meet the detector performance and the product availability simultaneously. For the purpose of optimizing the design parameters of the TFT array, a Spice simulation was performed. As a result, some parameters, such as the TFT width, the data line capacitance, and the storage capacitance, were able to be fixed. The other parameters were decided within a permissible range of the TFT process especially the photolithography process and the wet etch process. Then we adapted the TFT array which had been produced by the proposed design to our prototype model (FDXD-1417 and evaluated it clinically by comparing with a commercial model (EPEX, Hologic, Beford, USA). The results say that our prototype model is slightly better than EPEX system in chest PA images. So we can prove the technical usefulness and the commercial values of the proposed TFT design.

• International Journal of Advanced Culture Technology
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• v.12 no.2
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• pp.368-374
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• 2024

During an X-ray examination, the beam of radiation is dispersed in many directions. We believe that managing radiation dose is about providing transparency to users and patients in the accurate investigation and analysis of radiation dose. The purpose of measuring the radiation dose as a function of location is to ensure that medical personnel using the equipment or participating in the operating room are minimally harmed by the different radiation doses depending on their location. Four mobile diagnostic X-ray units were used to analyze the radiation dose depending on the spatial location. The image intensifier and the flat panel detector type that receives the image analyzed the dose by angle to measure the distribution of the exposure dose by location. The radiation equipment used was composed of four units, and measuring devices were installed according to the location. The X-ray (C-arm) was measured by varying the position from 0 to 360 degrees, and the highest dose was measured at the center position based on the abdominal position, and the highest dose was measured at the 90° position for the head position when using the image intensifier equipment. The operator or medical staff can see that the radiation dose varies depending on the position of the diagnostic radiation generator. In the image intensifier and flat panel detector type that accepts images, the dose by angle was analyzed for the distribution of exposed dose by position, and the measurement method should be changed according to the provision of dose information that is different from the dose output from the equipment according to the position.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.379-382
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• 2002

Lately, intensifying screen of the $CaWO_4$ is used to medical treatment and diagnosis of the image. In this paper, we investigated transmission fraction and mass attenuation coefficient of $CaWO_4$ screen about diagnostic x-ray of low energy using MCNP 4C code. Experimentally, for 0.9 mm-$CaWO_4$ screen, the absorbable rate of diagnostic x-ray is more than 95%. according to kVp, the experimental value of mass attenuation coefficient is in a1most agreement with an corrected estimate value of MCNP and the deviation of experimental values is less than ${\pm}7%$. Using the MCNP code through this paper, we can make an estimate of signal and design for construction of the CaWO4/a-Se based digital x-ray image detector and make a good use of the foundation data for development of other materials.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1746-1748
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• 1997

The surface discharge type ac plasma display panel(ac PDP) is a flat display devices using gas discharge. In ac PDP, parallel electrodes covered with dielectric layer are on a substrates. The discharge current characteristics are affected by cell structure. In this study, the relationship between the principal design factor and discharge characteristics is discussed, based on experiment, and the current waveform is measured by voltage detector and storage O.S.C. as a parameter of design factor, e.g., electrode gap and width.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.15-18
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• 2003

The Cd$\_$1-x/Zn$\_$x/Te film was produced by thermal evaporation for the flat-panel X-ray detector. The crystal structure and the surface morphology of poly crystalline Cd$\_$1-x/Zn$\_$x/Te film were examined using XRD and SEM, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in a polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$\_$0.7/Zn$\_$0.3/Te thin film were measured to 0.3 1nA/$\textrm{cm}^2$ and 260 pC/$\textrm{cm}^2$ at an applied voltage of 2.5 V/$\mu\textrm{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$\_$1-x/Zn$\_$x/Te detectors reduced the leakage current and improved the X-ray sensitivity significantly. The leakage current was drastically diminished by the formation of thin parylene layer in the Cd$\_$0.7/Zn$\_$0.3/Te detector.