• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.53-60
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• 2014

Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.

• Design & Manufacturing
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• v.16 no.1
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• pp.27-35
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• 2022

Thermoforming is a plastic manufacturing process that applies a force to stretch a film of heated thermoplastic material over an engineered mold to create a 3-dimensional shape. After forming, the shaped part can then be trimmed and finished to specification to meet an end-user's requirements. The process and thermoplastic materials are extremely versatile and can be utilized to manufacture parts for a very wide range of applications. In this study, based on K-BKZ nonlinear viscoelastic model, thermoforming process analysis was performed for an interior room-lamp. The predicted thickness was minimum at the corner of a molded film, and maximum at the center of the bottom. By using the Taguchi method of design of experiments, the effects of process conditions on residual stresses were investigated. The dominant factors were the liner thickness and the film heating time. As the thickness of the liner increased, the residual stress decreased. And it was found that the residual stress decreased significantly when the film heating temperature was higher than the glass transition temperature. A thermoforming mold and a trimming mold were manufactured, and the spring back was investigated through experiments. The dominant factors were film heating time, liner thickness, and lower mold temperature. As the film heating time and liner thickness increased, the spring back decreased. In addition, it was found that the spring back decreased as the lower mold temperature increased.

• Journal of IKEEE
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• v.28 no.3
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• pp.261-270
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• 2024

In this study, a lanthanum gallium oxide (LaGaO) solution was prepared using a sol-gel method. By simply forming a LaGaO thin film through adjusting the curing temperature after applying the solution onto the substrate using a brush coating process, the potential for use as a liquid crystal (LC) alignment film in the LC display industry was validated. Through optical microscope observation, it was confirmed that the LC molecules were uniformly aligned as the curing temperature of the LaGaO thin film increased. It was confirmed that the LaGaO thin film cured at 230℃ had low pretilt angle, and that LaGaO particles were formed in a single direction as observed through an atomic force microscope. Through X-ray photoelectron spectroscopy, it was found that the LaGaO metal oxide thin film was well formed. Finally, it has been confirmed that LaGaO metal oxide has the potential as a novel LC alignment film material, as it exhibits excellent electrical and optical properties, along with high optical transmittance.

• Journal of Sensor Science and Technology
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• v.26 no.1
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• pp.24-27
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• 2017

In this study, I developed a simple and low cost process-printing a silver, carbon, dielectric, adhesive layer on PET films using screen printing technology and bonding the two films face-to-face-to fabricate a low price capacitive pressure-mapping sensor. Both electrodes forming the pressure measuring capacitor are arranged between the two PET films similar to a sandwich. Therefore, the sensor has the advantage of minimizing the influence of external noise. In this study, a $10{\times}10$ capacitance-type pressure-mapping sensor was fabricated and its characteristics were analyzed.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2001.11a
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• pp.87-94
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• 2001

Scale is agglomerate or thin film compounded of soluble salts in papermaking process. It causes many problems such as closing up pipelines, contaminating wire and felt, decreasing efficiency of additives and paper quality. In this study, physical factors related to forming scale in white water are determinated and optimum conditions are proposed. To control scale, ACP(Acrylacid Copolymer) was synthesized and compared with conventional chemicals such as EDTA, DTPA and STPP.

• IE interfaces
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• v.10 no.1
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• pp.67-77
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• 1997

반도체 제조공정에서 패터닝 공정과 박막형성 공정은 매우 중요한 위치를 차지하고 있다. 본 논문의 목적은 위 두가지의 공정을 최적화하기 위한 품질공학적 접근방법을 소개하는데 있다. 특히, 패터닝 공정의 전사성과 박막현상 공정의 두께의 균일성에 관한 문제를 동특성의 문제로 정형화하고 신호인자를 어떻게 설정할 것인가에 관해 논의하였다.

• Proceedings of the Membrane Society of Korea Conference
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• 1996.10a
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• pp.92-93
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• 1996

PVA membrane was widely used in the dehydration pervaporation process. PVA membrane showed remakable selectivity towed water and an excellent film-forming polymer, with a good resistance to orgamic solvents but it has poor stability in aqueous mixtures. Generally the PVA is manufactured by the hydrolysis reaction from poly vinyl acetate(PVAc) and so the degree of PVA hydrolysis is a major parameter for properties of PVA membrane such as the crystallinity and polarity.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.61-64
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• 2003

The information display industry this century has to improve our life without increasing energy consumption. Suftla technology together with high-performance silicon thin film transistors (TFTs) and ink-jet technology for forming metal-wiring and organic TFTs will play leading roles for achieving this requirement. In this paper these technologies are reviewed and the concept of the information displays in near future is discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.133-136
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• 2002

It is very important to get a stable and large-capacity organic effusion source for achievement of OLED mass-production equipment. We present an organic effusion source with film uniformity less than ${\pm}$ 5%, the material charge volume, 300cc for $400{\times}400\;mm^2$ substrate. The fine metal shadow mask alignment technology, one of the color forming technique, also have to support more accurate and fast operating in mass-production. In this paper, we will describe the OLED mass-production equipment with the large volume effusion source and the precision shadow mask alignment technique.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.