• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.991-996
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• 1999

Effect of solution property on the weight varation and microstructural change of film was studied by electrophoretic deposition in order to obtain a homogeneous and dense zirconia film. As a result of weight kinetics of film which obtained in alcohol or aqueous solution having different polarity experimental data showed large deviation from theoretical ones calculated by Zhang's kinetic model. It had been shown that the weight affecting factors was largely dependent on properties other than dielectric constant and viscosity of solvent zeta potential appiled field and time. In initial stage a main factor of the drastic weight increase was the capillary drag of porous substrate. The cause of weight decrease with time in aqueous solution after 300 s was attributed to the defect of film by sagging and electrolytic reaction. The electrolyte film which prepared in alcohol solution with good wetting for substrate had better homogeneous and dense microstructure than one in aqueous solution with high surface tension.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.88-89
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• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1121-1127
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• 1994

The accelerated degradation phenomena in amorphous silicon thin film transistors due to both electrical stress and visible light illumination under the elevated temperature have been investigated systematically as a function of gate bias, light intensity, and stress time. It has been found that, in case of electrical stress, the thrshold voltage shifts of a-Si:H TFT's may be attributed to the defect creation process at the early stage, while the charge trapping phenomena may be dominant when the stressing periods exceed about 2 hours. It has been also observed that the degradation in the device characteristics of a-Si:H TFT's is accelerated due to multiple stress effects, where the defect creation mechanism may be more responsible for the degradation rather than the charge trapping mechanism.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.60-64
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• 2024

The threshold voltage shift in thin-film transistors (TFTs) is modeled using stretched-exponential (SE) and stretched-hyperbola (SH) functions. These models are derived by introducing empirical parameters into reaction rate equations that describe defect generation or charge trapping caused by hydrogen diffusion in the dielectric or interface. Separately, the dielectric relaxation phenomena are also described by the same reaction rate equations based on defect diffusion. Dielectric relaxation was initially modeled using the SE model, and various models have been proposed using fractional calculus. In this study, the characteristics of the threshold voltage shift and the dielectric relaxation phenomena are compared and analyzed to explore the applicability of analytical models used in the field of dielectric relaxation, in addition to the conventional SE and SH models.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.115-121
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• 2013

ZnO film has been used for CIGS solar cells as a buffer layer as itself or by doping Mg and Sn; ZnO film also has been used as a transparent conducting layer by doping Al or B for solar cells. Since ZnO itself is a host material for many applications it is necessary to understand the electrical and optical properties of ZnO film itself with various preparation conditions. We prepared ZnO films by converting ZnS precursor into ZnO film by thermal annealing. ZnO film was formed at low temperature as low as $500^{\circ}C$ by annealing a ZnS precursor layer in air. In the air annealing, the electrical resistivity decreased monotonically with increasing annealing temperature; the intensity of the green photoluminescence at 505 nm increased up to $750^{\circ}C$ annealing. The electrical resistivity further decreased and the intensity of green emission also increased in reducing atmospheres. The results suggest that deep-level defects originated by oxygen vacancy enhanced green emission, which reduce light transmittance and enhance the recombination of electrons in conduction band and holes in valence. More oxidizing environment is necessary to obtain defect-free ZnO film for higher transparency.

• Imaging Science in Dentistry
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• v.42 no.4
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• pp.243-247
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• 2012

Purpose: This study was performed to compare the inverted digital images and film-based images of dry pig mandibles to measure the periodontal bone defect depth. Materials and Methods: Forty 2-wall bone defects were made in the proximal region of the premolar in the dry pig mandibles. The digital and conventional radiographs were taken using a Schick sensor and Kodak F-speed intraoral film. Image manipulation (inversion) was performed using Adobe Photoshop 7.0 software. Four trained examiners made all of the radiographic measurements in millimeters a total of three times from the cementoenamel junction to the most apical extension of the bone loss with both types of images: inverted digital and film. The measurements were also made in dry mandibles using a periodontal probe and digital caliper. The Student's t-test was used to compare the depth measurements obtained from the two types of images and direct visual measurement in the dry mandibles. A significance level of 0.05 for a 95% confidence interval was used for each comparison. Results: There was a significant difference between depth measurements in the inverted digital images and direct visual measurements (p>|t|=0.0039), with means of 6.29 mm ($IC_{95%}$:6.04-6.54) and 6.79 mm ($IC_{95%}$:6.45-7.11), respectively. There was a non-significant difference between the film-based radiographs and direct visual measurements (p>|t|=0.4950), with means of 6.64mm($IC_{95%}$:6.40-6.89) and 6.79mm($IC_{95%}$:6.45-7.11), respectively. Conclusion: The periodontal bone defect measurements in the inverted digital images were inferior to film-based radiographs, underestimating the amount of bone loss.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.61-61
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• 2007

• Journal of the Korean institute of surface engineering
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• v.53 no.2
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• pp.80-86
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• 2020

This paper is concerned with type of imperfections present within the anodic oxide films on AA2024 and surface hardness of the anodic film measured after ink-impregnation. The anodic oxide films were formed for 25 min at 40 mA/㎠ and 15±0.5℃ and 300 rpm of magnet stirring rate in 20% sulfuric acid solution. The ink-impregnation allows clear observations of not only the imperfections within the anodic oxide films but also an indentation mark on the oxide film surface made by a pyramidal-diamond penetrator for the hardness measurement. There were observed four different regions in the anodic oxide films on AA2024 and the surface hardness of the anodic oxide films appeared to be crucially dependent on the type of defects, showing 60~100 H_v on the oxide surface region I with large size black defect, 100~140 H_v on the oxide surface region II with large size grey defect, 140~170 H_v on the oxide surface region III with mall size black and/or grey defects and 170~190 H_v on the oxide surface region IV without defects. The pyramidal indentation marks were observed to be distorted in the regions with a large size black and grey defects, while no distortion of the indentation mark was observed in the regions with small size defects and without visible defects.

• Journal of the Korean institute of surface engineering
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• v.51 no.6
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• pp.421-429
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• 2018

In this study, various electrochemical experiments were carried out to compare the corrosion characteristics of AA5052-O, AA5083-H321 and AA6061-T6 in seawater. The electrochemical impedance and potentiostatic polarization measurements showed that the corrosion resistance is decreased in the order of AA5052-O, AA5083-H321 and AA6061-T6, with AA5052-O being the highest resistant. This is closely associated with the property of passive film formed on three tested Al alloys. Based on the slope of Mott-Schottky plots of an n-type semiconductor, the density of oxygen vacancies in the passive film formed on the alloys was determined. This revealed that the defect density is increased in the order of AA5052-O, AA5083-H321 and AA6061-T6. Considering these facts, it is implied that the addition of Mg, Si, and Cu to the Al alloys can degrade the passivity, which is characterized by a passive film structure containing more defect sites, contributing to the decrease in corrosion resistance in seawater.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1794-1798
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• 2018

We have grown famatinite $Cu_3SbS_4$ films by using sulfurization of Cu/Sb stack film. Sulfurization at $500^{\circ}C$ produced famatinite $Cu_3SbS_4$ phase, while $400^{\circ}C$ and $450^{\circ}C$ sulfurization exhibited unreacted and mixed phases. The fabricated $Cu_3SbS_4$ film showed S-deficiency, and secondary phase of $Cu_{12}Sb_4S_{13}$. The secondary phase was confirmed by X-ray diffraction, Raman spectroscopy, photoluminescence and external quantum efficiency measurements. We have also fabricated solar cell in substrate type structure, ITO/ZnO/(Zn,Sn)O/$Cu_3SbS_4$/Mo/glass, where $Cu_3SbS_4$ was used as a absorber layer and (Zn,Sn)O was employed as a Cd-free buffer. Our best cell showed power conversion efficiency of 0.198%. Characterization results of $Cu_3SbS_4$ absorber indicates deep defect (due to S-deficiency) and low shunt resistance (due to $Cu_{12}Sb_4S_{13}$ phase). Thus in order to improve the cell efficiency, it is required to grow high quality $Cu_3SbS_4$ film with no S-deficiency and no secondary phase.