• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.760-763
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• 2004

We studied the nematic liquid crystaL(NLC) aligning capabilities using the new alignment material of a nitrogenated diamond-like carbon(NDLC) thin film. The NDLC thin film exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) thin films. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. A high pretilt angle of about 9.9$^{\circ}$ by ion beam(IB) exposure on the NDLC thin film surface was measured. A good LC alignment is achieved by the IB alignment method on the NDLC thin films surface at annealing temperature of 200 $^{\circ}C$. The alignment defect of the NLC was observed above annealing temperature of 250 $^{\circ}C$. Consequently, the high pretilt angle and the good LC alignment by the IB alignment method on the NDLC thin film surface can be achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.580-585
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• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.791-798
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• 1999

The preparation method of yttria-stabilized zirconia(YSZ) thin film for an anode support type solid oxide fuel cell(SOFC) by electrophoretic deposition(EPD) and dip-coating was studied. And the difference in both preparation method was investigated through basic understanding of processing parameters which may significantly affect weight microstruxcture and defect of film. In dip-coating the thickness of film increased with time until 30 s and then the weight of film decreased with time due to particle falling off from the coagulated film. In EPD although the weight of film increased with time and applied constant-current sagging of the film was observed when the applied current was less that 0.035 mA/$cm^2$ and more than 120 s. Since YSZ thin film by EPD on porous substrate was dense smooth and homogeneous it was expected to be suitable for the electrolyte of an anode support type SOFC.

• Corrosion Science and Technology
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• v.12 no.1
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• pp.40-49
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• 2013

Effects of magnesium and pH on corrosion of aluminum galvanically coupled to iron have studied by using potentio- dynamic and static tests for polarization curves, Mott-Schottky test for analysis of semiconductor property, and GD-AES and XPS for film analysis. Pitting potential was sensitive to magnesium as an alloying element but not to pH, while passive current was sensitive to pH but not to magnesium. It was explained with, instead of point defect model (PDM), surface charge model describing that the ingression of chloride depends on the state of surface charge and passive film at film/solution interface is affected by pH. In addition, galvanic current of aluminum electrically coupled to iron was not affected by magnesium in pH 8.4, 0.2M citrate solution but was increased by magnesium at the solution of pH 9.1. The galvanic current at pH 9.1 increased with time at the initial stage and after the exposure of about 200 minute, decreased and stabilized. The behavior of the galvanic current was related with the concentration of magnesium at the surface. It agreed with the depletion of magnesium at the oxide surface by using glow discharge atomic emission spectroscopy (GD-AES). In addition, pitting potential of pure aluminum was reduced in neutral pH solution where chloride ion maybe are competitively adsorbed on pure aluminum. It was confirmed by the exponential decrease of pitting potential with log of [$Cl^-$] around 0.025 M of [$Cl^-$] and linear decrease of the pitting potential. From the above results, unlike magnesium, alloying elements with higher electron negativity, lowering isoelectric point (ISE), are recommended to be added to improve pitting corrosion resistance of aluminum and its alloys in neutral solutions as well as their galvanic corrosion resistance in weakly basic solutions.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.39-44
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• 2015

$Cu(In,Ga)_3Se_5$ (${\beta}-CIGS$) has a band gap of 1.35 eV which is an optimum value for high solar-energy conversion efficiency. However, ${\beta}-CIGS$ film was not well characterized yet due to lower efficiency compared to $Cu(In,Ga)Se_2$ (${\alpha}-CIGS$). In this work, ${\beta}-CIGS$ films were fabricated by a three-stage co-evaporation of elemental sources with various Se fluxes. As the Se flux increased, the crystallinity of ${\beta}-CIGS$ phase was improved from the analysis of Raman spectroscopy and a deep-level defect was reduced from the analysis of photoluminescence spectroscopy. A Se treatment of the ${\beta}-CIGS$ film at $200^{\circ}C$ increased Ga content and decreased Cu content at the surface of the film. With the Se treatment at $200^{\circ}C$, the cell efficiency was greatly improved for the CIGS films prepared with low Se flux due to the increase of short-circuit current and fill factor. It was found that the main reason of performance improvement was lower Cu content at the surface instead of higher Ga content.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.10 no.1
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• pp.63-68
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• 1980

The purpose of this article is to re-examine the roentgenographic appearance of alveolar osseous in an effort to determine the value of the orthopantomogram in the diagnosis of periodontal disease. A total of 158 osseous lesions from 13 human dry skulls were studied. 14 Ultra-speed periapical films, 2 bitewing films and Kodak panoramic film are used to obtain radiographs of all defects. The bisecting technic was used, with a target-film distance of. 8 inches and exposure factors of 70 kVp, 10MA and 0.4 sec. at anterior teeth, 0.6 see at posterior teeth in exposure time. For orthopantomogram, Panoura Eight-C was used with a exposure factors of 90kVp, 10MA. and 15sec. exposure time. All films were developed in a light. tight darkroom at 68°F for 4½ minutes. Comparison of orthopantomogram and intraoral films on the view-box was carefully studied in relation to the types of osseous defect visually evident; Proximal intraosseous defects, Interproximal craters, Interproximal hemisepta, Furcal defects on multirooted teeth, and Facial or Lingual one-walled defects. The results obtained were as follows; 1. Proximal osseous defects throughout the dental arches and furcal defects on facial and lingual surfaces of multirooted teeth can be identified with a high degree of accuracy from their orthopantomographic appearances. 2. Lesions on facial or lingual surface of the alveolar arches are rather difficult to locate or recognize on the dental radiographs. 3. In determining whether the proximal and furcal lesions are located facially or lingually, Orthopantomogram is superior to the conventional film Orthopantomogram obtained with standardization of head in proper position revealed the complete visualization of alveolar bone without showing occlusal surface of molars and proximal superimposition of teeth. Thus, on the standardized orthopantomograms, The roentgenographic characteristics of each defect were determined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.331-334
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• 2003

Photovoltaics is considered as one of the most promising new energy technology, because its energy source is omni present, pollution-free and inexhaustive. It is agreed that these solar cells must be thin film type because thin film process is cost-efficive in the fact that it uses much less raw materials and can be continuous. The defect chalcopyrite material $CuIn_3Se_5$ has been identified as playing an essential role in efficient photovoltaic action in $CuInSe_2$-based devicesm It has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart $CuInSe_2$. Because the most efficient cells consist of the $Cu(In,Ga)Se_2$ quarternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite $Cu(In,Ga)_3Se_5$ may help us better understand the junction phenomena in such devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.186-189
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• 2003

The role of excess Pb about the crystallization behavior and electrical properties in b(Zr$\sub$0.52/Ti$\sub$0.48/)O3(PZT) thin films has not been precisely defined. In this work, the effect of excess Pb content on the ferroelectric properties of these films was investigated. To analyze the effect, PZT films containing various amounts of excess Pb were Prepared. PZT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (111) and no pyrochlore phase was observed. As higher excess Pb was included, the films showed that value of leakage current shift from 2.03${\times}$10$\^$-6/ to 6.63 ${\times}$ 10$\^$-8/A/cm$^2$ at 100kV/cm, and value of remanent polarization shift from 8.587 ${\mu}$C /cm$^2$ to 4.256 ${\mu}$C/ cm$^2$. Electrical properties of PZT thin film affected by Pb excess content of target were explained to be caused of defect among space charges and defect grain boundaries.

• Journal of Periodontal and Implant Science
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• v.30 no.1
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• pp.167-180
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• 2000

The present study evaluated the effects of guided tissue regeneration using biodegradable membrane, with and without calcium-phosphate thin film coated deproteinated bone powder in beagle dogs. Contralateral fenestration defects(6 × 4 mm) were created 4 mm apical to the buccal alveolar crest on maxillary canine teeth in 5 beagle dogs. Ca-P thin film coated deproteinated bone powder was implanted into one randomly selected fenestration defect(experimental group). Biodegradable membranes were used to provide bilateral GTR. Tissue blocks including defects with overlying membranes and soft tissues were harvested following a four- & eight-week healing interval and prepared for histologic analysis. The results of this study were as follows. 1.......The regeneration of new bone, new periodontal ligament, and new cementum was occurred in experimental group more than control group. 2.......The collapse of biodegradable membranes into defects were showed in control group and the space for regeneration was diminished. In experimental group, the space was maintained without collapse by graft materials. 3........In experimental group, the graft materials were resorbed at 4 weeks after surgery and regeneration of bone surrounding graft materials was occurred at 8 weeks after surgery. 4.......Biodegradable membranes were not resorbed at 4 weeks and partial resorption was occurred at 8 weeks but the framework and the shape of membranes were maintained. No inflammation was showed at resorption. In conclusion, the results of the present study suggest that Ca-P thin film coated deproteinated bone powder has adjunctive effect to GTR in periodontal fenestration defects. Because it has osteoconductive property and prohibit collapse of membrane into defect, can promote regeneration of much new attachment apparatus.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.246-250
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• 2021

TFTs technologies with as high mobility as possible is essential for high-performance large displays. TFTs using nanocrystalline silicon thin films can achieve higher mobility. In this work, the change of the crystalline volume fraction at different hydrogen dilution ratios was investigated by depositing nc-Si:H thin films using PECVD. It was observed that increasing hydrogen dilution ratio increased not only the crystalline volume fraction but also the crystallite size. The thin films with a high crystalline volume fraction (55%) and a low defect density (10¹⁷ cm^-3·eV^-1) were used as top gate TFTs channel layer, leading to a high mobility (55 cm²/V·s). We suggest that TFTs of high mobility to meet the need of display industries can be benefited by the formation of thin film with high crystalline volume fraction as well as low defect density as a channel layer.