• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.9-14
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• 1996

We have fabricated the vacuum magnetic sensor with a lateral field emitter arrays constructed on n-Si substrate, and investigated its magnetic characteristics. The device consists of 100 field-emitter tips with a $10{\mu}m$ pitch, gate, and split-anodes which are laterally structured. The electron-emission characteristics from the emitter followed the Fowler-Nordheim tunnelling theory. The sensor has good linear characteristics and high sensitivity of 825 %/T.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.171-175
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• 1996

Gate insulator for Si field emitter is usually formed by e-beam evaporation. However, the evaported oxide requires densification for a stable process and a reduction of gate leakage which results from its Si-rich and nonstoicheiometric structure. In this study, we have developed the process technology able to densify the evaporated oxide in H$_{2}$O ambient. Using this process, we have fabricted thefield emitter array with 625 emitters per pixel, of which gate hole diameter is 1.4.mu.m, for the pixel, anode current of 14.3.mu.A was extracted at a gate bias of 100V and gate leakage was about 0.27% of the total emission current.

• Carbon letters
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• v.10 no.3
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• pp.234-238
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• 2009

The field emitters were fabricated by screen-printing of carbon nanotube paste, and their emission stabilities were evaluated. It was found that the emission stability measured in a sealed device is much higher than that measured in a vacuum chamber in spite of similar pressure. This was because oxygen gas was scarcely remained in the sealed device, while the gas is continuously supplied into the vacuum chamber during the stability measurement. It was found that the plasma treatment etched the protruded CNTs, resulting in the uniform height of CNT tips. As a result, the stability was increased remarkably. It was also found that the stability of CNT paste emitter was improved by electrical aging and that the optimum condition for the aging was varied with the size of emitter.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.219-220
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• 2000

We propose a new method for the formation of an aluminum parting layer in the fabrication of field emitter arrays, in which we used a reflow property of aluminum at a lower temperature than the deformation point of glass. After the sputtered aluminum layer on the gate metal was etched for the formation of gate holes, we carried out a rapid thermal annealing process, by which the aluminum slightly diffused into the gate hole. This reflowed aluminum could be used as a parting layer and emitter arrays were easily fabricated using this method.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.43-43
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• 2003

Carbon nanotubes(CNTs) have many application points, which are field emission devices, composites, hydrogen storage, nanodevices, supercapacitor and secondary battery. The most promising application point is emitter tip mays of field emission devices. Furthermore, it may be also useful as a vacuum device for high frequency and high power. But, there are some obstacles to fabricate carbon nanotube field emission device. One is that CNTs grown by CVD method has weak adhesion with substrate and the other is non-uniform length of them. These problems are very crucial in aging property and reliability of device in the field emission.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.28-31
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• 2013

A volcano shaped gated Si-FEA (silicon field emitter array) was simply fabricated using sputtering as a gate electrode deposition and lift-off for the removal of the oxide mask, respectively. Due to the limited step coverage of well-controlled sputtering and the high aspect ratio in Si dry etch caused by high RF power, it was possible to obtain Si FEAs with a stable volcano shaped gate structure and to realize the restriction of gate leakage current in field emission characteristics. For 100 tip arrays and 625 tip arrays, gate leakage currents were restricted to less than 1% of the anode current in spite of the volcano-shaped gate structure. It was also possible to keep the emitters stable without any failure between the Si cathode and gate electrode in field emission for a long time.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.100-105
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• 1997

3-dimensional finite element mehtod (FEM) elecrical field analysis was performed to obtain electric fields on a field emission display (FED) tip in an array form. Because, unlike a single tip structure, there is no azimuthal symmetry for a tip aary, 3D analysis is necessary. To reduce memory requriement the simulatio was performed by applying the neumann boundary condition to the intermediate plane between tips to take the effect of the array on the electric field into account and corresponding current was calculated. To verify our algorithm, comparison between simulation resutls and experimental data from another paper was made and the difference was discussed.

• Current Optics and Photonics
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• v.6 no.2
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• pp.191-195
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• 2022

We investigate the lateral far-field pattern characteristics, including divergence angle change and far-field pattern analysis as output power increases, of narrow-emitter-width 850 nm GaAs/AlGaAs laser diodes (LDs). Each LD has a cavity of 1200 and 1500 ㎛ and narrow emitter width of 2.4 ㎛ for the top and 4.6 ㎛ for the bottom. The threshold currents are 35 and 40 mA, and L-I kinks appear at power levels of 326 and 403 mW, respectively. The divergence angle tends to increase due to the occurrence of first-order lateral mode and the thermal lensing effect. But with the L-I kink, the divergence angle decreases and the far-field pattern becomes asymmetric. This is due to coherent superposition between the fundamental and the first-order lateral mode. We provide detailed explanations for these observations based on high-power laser diode simulation results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.63-66
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• 2000

In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.1
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• pp.121-131
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• 2015

Passive emitter localization is preferred to use a small number of receivers as possible for the efficiency of strategic management in the field of modern electronic warfare support. Accurate emitter localization can be expected when utilizing continuous measurable parameters and a appropriate combination of theirs. For this reason, we compare CRLB (Cramer-Rao lower bound) of two moving platform with various measurable parameters to choose a appropriate combination of parameters for a better localization performance. And we propose the passive emitter localization method based on Levenberg-Marquardt algorithm with combined TDOA/FDOA and DOA to achieve better accuracy of emitter localization which is located on the ground and stationary. In addition, we present a method for determining the initial emitter position for LM algorithm's input to avoid the divergence of estimation and local minimum.