• 한국세라믹학회지
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• 제42권5호
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• pp.299-303
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• 2005

The crystal structure and ferroelectricity of the $(1-x)BiFeO_3\;(BF)-xPbTiO_3$ (PT) ceramic system with the addition of $DyFeO_3$ (DF) have been investigated for attaining a high temperature piezoelectric material. This study is focused on the relation between crystal structure and ferroelectric property with the addition of DF over the phase boundary in the (1-x)BF-xPT system. Hysteresis curves of polarization-electric field at room temperature have been measured. The X-ray and neutron diffraction data were analyzed by the rietveld refinement method. The addition of 0.1 mole DF into BF-PT system greatly increases the ferroelectric remanant polarization Pr values, e.g. 17 ${\mu}C/cm^2$ in 0.6BF-yDF-(0.4-y)PT and 31${\mu}C/cm^2$ in 0.5BF-yDF-(0.5.y)PT, respectively. The improved Pr value has been discussed in relation with crystal structure and electrical property.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1434-1436
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• 1996

In this study, ferroelectric $PbTiO_3$ thin films were deposited on the Pt/$SiO_2$/Si substrate by Sol-Gel method. $PbTiO_3$ stock solution was made and spin-cooled at 4000[rpm] for 30[sec.]. Coated specimens were dried at $400[^{\circ}C]$ for 10[min.] and then annealed at $500{\sim}800[^{\circ}C]$ for 1 hour. Annealing temperature were examined to optimize micro structural and dielectric properties of the films. The ferroelectric perovskite phase was observed in the file annealed at $700[^{\circ}C]$ for 1 hour. In the case of $PbTiO_3$ thin films annealed at $700[^{\circ}C]$ for hour, dielectric constant and dielectric loss showed the good value of 324, 2.0[%], respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.189.1-189.1
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• 2014

Lead zirconium titanate (PZT) is usually used as bulk and thin films. Due to high flexibility and piezoelectric, ferroelectric and pyroelectric properties, PZT fiber has attracted in a variety of fields such as sensor devices, non-electromechanical systems and non-volatile ferroelectric memory devices. And PZT fiber can be numerously synthesized and almost with the diameter of PZT fiber thicker than $10{\mu}m$. However, the electrospinnig method is cost effective and convenient. PZT obtained by electrospinning methodhas the diameter from sub-micro to nanometer. In this paper, the PZT/PVP nanofibers were synthesized with three precursors, lead nitrate, zirconium ethoxide and titanium isopropoxide. And the PZT nanofibers were fabricated after removal of PVP by annealing process at various temperature. The obtained PZT nanofibers were characterized by means of X-ray photoelectron spectroscopy (XPS) for chemical properties, X-ray diffraction (XRD) for crystallinity and phase, scanning electron microscopy (SEM) for morphologies. The diameter of PZT nanofibers were measured with SEM. From the SEM images, we confirmed that diameter of PZT nanofibers was hundreds of nanometers and decreased with increasing the annealing temperature. When the annealing temperature increased, the crystallinity of PZT nanofibers changed from pyrochlore to perovskite structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.58-62
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• 2002

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ (PZT) thin films deposited on the Pt/Ti and Ru/$RuO_2$ bottom electrode by rf magnetron sputtering methode. Ru/$RuO_2$ bottom electrode deposited on the p-type wafer as Ru thickness by in-situ process. Our results show that all PZT films indicated perovskite polycrystalline structure with perferred orientation (110) and no pyrochlore phase is observed. A well-fabricated $RuO_2$/PZT/Ru(100nm)/$RUO_2$ capacitor showed a leakage current density in the order of $2.13{\times}10^{-7}A/cm^2$ as 100 kV/cm, a remanent polarization of 7.20 ${\mu}C/cm^2$, and a coercive field of 58.37 kV/cm. The results show that the new Ru/$RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.236-237
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• 2005

The structural properties of $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films with post-annealing temperature were investigated. $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films were deposited by RF sputtering method on Pt/Ti/$SiO_2$/Si substrates with optimum deposition condition. The $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films was post-annealed at 600$^{\circ}C$, 650$^{\circ}C$, 700$^{\circ}C$, 750$^{\circ}C$, 800$^{\circ}C$ in furnace,respectively. Increasing the post-annealing temperature, the grain size, density and peak intensity of (117) and c-axis orientation were increased. The $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films that annealed at 750$^{\circ}C$ exhibited well crystallized phase and had no vacancy and grain was uniform. but there are some secondary phases observed. At this time, the average thickness of $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films was 2000 ${\AA}$.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.983-989
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• 2005

[ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.

• 한국세라믹학회지
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• 제34권6호
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• pp.620-628
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• 1997

The possibility of the existence of a field-induced micro-macrodomain switching was proposed and examined using 9 mol % PbZrO3-doped 0.6Pb(Ni1/3Nb2/3)O3-PbTiO3 (PNN-PT) systems having rhombohedral symmetry at room temperature. the thermally depoled (freshly prepard) specimens prepared from the rhombohedral side of the system exhibited a relaxor behavior for the whole range of temperature examined (for T

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.357-360
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• 2000

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4${\mu}{\textrm}{m}$. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.05%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive electric field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1881-1883
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• 2005

In this study, PZT thin films were fabricated using sol-gel Processing onto $Si/SiO_2/Ti/Pt$ substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}\;A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1562-1564
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• 2003

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C,\;650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.