Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Preparation and Dielectric Properties of the $PbTiO_3$ Thin Film by Sol-Gel Method

Sol-Gel법에 의한 $PbTiO_3$ 박막의 제조 및 유전 특성

  • Chung, Jang-Ho (Dept. of Electronic Materials Eng. Kwang Woon Univ.) ;
  • Park, In-Gil (Dept. of Electronic, Sinsung Junior College.) ;
  • Ryu, Ki-Won (Dept. of Electronic, Yeojoo Junior College.) ;
  • Lee, Young-Hie (Dept. of Electronic Materials Eng. Kwang Woon Univ.)
  • 정장호 (광운대학교 전자재료공학과) ;
  • 박인길 (신성전문대학 전자과) ;
  • 류기원 (여주전문대학 전자과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 1996.07.22
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, ferroelectric $PbTiO_3$ thin films were deposited on the Pt/$SiO_2$/Si substrate by Sol-Gel method. $PbTiO_3$ stock solution was made and spin-cooled at 4000[rpm] for 30[sec.]. Coated specimens were dried at $400[^{\circ}C]$ for 10[min.] and then annealed at $500{\sim}800[^{\circ}C]$ for 1 hour. Annealing temperature were examined to optimize micro structural and dielectric properties of the films. The ferroelectric perovskite phase was observed in the file annealed at $700[^{\circ}C]$ for 1 hour. In the case of $PbTiO_3$ thin films annealed at $700[^{\circ}C]$ for hour, dielectric constant and dielectric loss showed the good value of 324, 2.0[%], respectively.

Keywords