• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.195-201
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• 2024

The low-temperature deposition of BaNi_(2-x)Co_xFe₁₆O₂₇ thin films with a Ba hexaferrite structure for electromagnetic shielding was studied. The BaNi_(2-x)Co_xFe₁₆O₂₇ thin films produced through the spin spray process were suitable for thin film deposition on a flexible substrate because it crystallized well at low temperature below 90℃. The change in shielding characteristics depending on the Co content of the BaNi_(2-x)Co_xFe₁₆O₂₇ thin film was investigated, and excellent shielding characteristics with S21 of -1 dB were obtained in a wide frequency range of 26~40 GHz when the Co content was 0.4 or more. The purpose of this study is to analyze changes in shielding properties caused by change in Co content in relation to phase changes in BaNi_(2-x)Co_xFe₁₆O₂₇ and obtain basic data for developing excellent flexible electromagnetic wave shielding materials.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.6 no.1
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• pp.18-22
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• 2013

Input impedance of the inverted L antenna which is modified from a monopole antenna varies to very high input impedance value when the ratio of vertical height to horizontal length is reduced. So its impedance matching becomes very difficult. In this paper, we analyzed the input impedance variation range depending on the ratio of vertical height to horizontal length in the normal and ferrite thin film added configuration for the input impedance control. For the exact analysis involving the permittivity, permeability and conductivity of ferrite material, FDTD numerical method is used.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.295-299
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• 1998

The magnetic thin films can be prepared without vacuum process and under the low temperature(<100 $^{\circ}C$) by ferrite plating. We have performed ferrite plating of $Ni_xFe_{3-x}O_4$ (x=0.162~0.138) films on cover glass at the substrate temperature 80 $^{\circ}C$ and pH range of the oxidizing solution, 7.1~8.8. the crystal structure of the samples has been identified as a single phase of polycrystal spinel structure by x-ray diffraction technique. The deposition rate and the grain size of the film increased with the pH of oxidizing solution. The coercive force (H_C)$ decreased with the pH of oxidizing solution.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.370.1-370.1
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• 2014

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active areas of research. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, ~100% spin polarization (P), and has a high Curie temperature (TC~850 K). On the other hand, Spinel ferrite CoFe2O4 has been widely studies for various applications such as magnetorestrictive sensors, microwave devices, biomolecular drug delivery, and electronic devices, due to its large magnetocrystalline anisotropy, chemical stability, and unique nonlinear spin-wave properties. Here we have investigated the magneto-transport properties of epitaxial CoxFe3-xO4 thin films. The epitaxial CoxFe3-xO4 (x=0; 0.4; 0.6; 1) thin films were successfully grown on MgO (100) substrate by molecular beam epitaxy (MBE). The quality of the films during growth was monitored by reflection high electron energy diffraction (RHEED). From temperature dependent resistivity measurement, we observed that the Werwey transition (1st order metal-insulator transition) temperature increased with increasing x and the resistivity of film also increased with the increasing x up to $1.6{\Omega}-cm$ for x=1. The magnetoresistance (MR) was measured with magnetic field applied perpendicular to film. A negative transverse MR was disappeared with x=0.6 and 1. Anomalous Hall data will be discussed.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.22-28
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• 1992

Barium ferrite thin films were reactively deposited with Fe and BaO composite targets by a facing tergects sputtering unit. When thermally oxidized silicon wafers were used as substrates, minimum substrate heating of $750^{\circ}C$ was necessary for the perfect c-axis alignment in barium ferrite films. To lower the critical substrate temperature for the good c-axis alignment, such seed layers as ZnO, ${\alpha}-Fe_{2}O_{3}$ and ${\gamma}-Fe_{2}O_{3}$ were tested. The excellent c-axis algnment of BaM was obtained at a substrate temperature of $600^{\circ}C$ on ZnO seed layer whose (002) plane was parallel to the substrate surface. The magnetic properties of the BaM film showed saturation magnetization of 295 emu/cc, perpendicular coercivity of 1.7 kOe and squareness of 0.75. Optimum deposition rate of $230\;{\AA}/min$ was obtained with the composite target and this was 5 to 20 times higher than those of other investigators with oxide targets.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.326-331
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• 2005

We obtain analytical expressions the magnetic field of ferrites for DC magnetron sputtering device, which has been widely used for vacuum thin film deposition, and suggested the equation on maximum radius of the magnetic field by analytic solution. Also, the analytic results are compared with some calculations using magnetization elements of right-angled hexahedron.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.423-430
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• 1997

졸-겔 dip coating법에 의해 제조한 바륨페라이트 박막의 미세구조와 결정학적인 구조 특성에 관해 조사하였다. 기판에 형성된 바륨페라이트 입자는 침상 형태의 입자들로 구성되어 있었으며, C축은 장축 방향이었고, 막 두께가 증가함에 따라 침상형 입자들은 기판에 평행하게 배향하는 경향을 나타내었다. 박막은 바륨페라이트층, Ba, Fe, SiO$_{2}$로 구성되어 있는 중간층, 그리고 기판층인 SiO$_{2}$층으로 구성되어 있었으며, 중간층과 SiO$_{2}$층간의 계면은 Ba 와 SiO$_{2}$간의 화합물로 구성되어 있었다. 침상 형태의 입자는 95$0^{\circ}C$에서 3시간 열처리하므로써 완전히 소실하였고, 130$0^{\circ}C$에서 3시간 열처리하므로써 c면이 기판에 평행하게 위치하는 완전한 육각판상 형태의 입자로 변화되었다.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.627-630
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• 1995

BaM films have a lot of advantage of chemical stability and mechanical stability as compared with a metallic thin film. In this paper, (Ba.Pb)M films have been prepared by using dc magnetron sputtering system and the dependences of their crystallographic characteristics and magnetic properties on oxygen pressure($Po_{2}$) were studied. The films prepared at $Po_{2}$ of around 0.02mTorr exhibit a fine particle-like structure and ${\Delta}{\theta}_{50}$ is as small as $1^{\circ}$. $Hc_{\bot},\;Hc_{//}$ and Ms of (Ba.Pb)M films are 700-800Oe, 200Oe and 180-230emu/cc, respectively.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.401-404
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• 2000

Mimicking the bacterial synthesis of magnetosomes, in which the functionalized surface of a cytoplasmic (lipid) membrane is considered to be stimulating the crystal growth of magnetite, we have successfully grown magnetite films at $30^{\circ}C$ using an arachic acid monomolecular layer as a functionalized surface. The lipid monomolecular layer was spread on an aqueous solution of FeCl$_2$ which was oxidized by flowing a mixed gas, with ratio $O_2$/$N_2$=1/2000, on the surface of the lipid layer. Mossbauer and X-ray diffraction analyses revealed that the Fe$_3$O$_4$ films contain small amounts of ferric hydroxyl impurity phases of ${\alpha}$-FeOOH and ${\tau}$-FeOOH. This is because the oxygen partial pressure at the ferrite/aqueous interface changed as the film (through which the gas penetrated) increased in thickness. Methods to obtain single phase magnetite films are proposed.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.31-36
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• 1994

The bonding behavior of $SiO_{2}$ thin film and glass during VCR head fabrication was investigated, varying the surface roughness of substrate and the sputtering parameter. Insufficient fillings of grooves In the $SiO_{2}$ film with glass was postulated to give rise to the generation of bubble in the glass. The surface roughness of $SiO_{2}$ film was found to depend on that of substrate. The lower the deposition rate, the smoother the surface of film. The bubble free glass after bonding could be obtained using substrate polished with 0.05$\mu\textrm{m}$ $Al_2O_3$ powder under the sputtering condition of 10% oxygen pressure.