Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.370.1-370.1
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- 2014
MBE Growth and Electrical and Magnetic Properties of CoxFe3-xO4 Thin Films on MgO Substrate
- Nguyen, Van Quang (Department of Physics, University of Ulsan) ;
- Meny, Christian (IPCMS/DMONS) ;
- Tuan, Duong Ahn (Department of Physics, University of Ulsan) ;
- Shin, Yooleemi (Department of Physics, University of Ulsan) ;
- Cho, Sunglae (Department of Physics, University of Ulsan)
- Published : 2014.02.10
Abstract
Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active areas of research. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, ~100% spin polarization (P), and has a high Curie temperature (TC~850 K). On the other hand, Spinel ferrite CoFe2O4 has been widely studies for various applications such as magnetorestrictive sensors, microwave devices, biomolecular drug delivery, and electronic devices, due to its large magnetocrystalline anisotropy, chemical stability, and unique nonlinear spin-wave properties. Here we have investigated the magneto-transport properties of epitaxial CoxFe3-xO4 thin films. The epitaxial CoxFe3-xO4 (x=0; 0.4; 0.6; 1) thin films were successfully grown on MgO (100) substrate by molecular beam epitaxy (MBE). The quality of the films during growth was monitored by reflection high electron energy diffraction (RHEED). From temperature dependent resistivity measurement, we observed that the Werwey transition (1st order metal-insulator transition) temperature increased with increasing x and the resistivity of film also increased with the increasing x up to