• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.569-572
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• 2015

We first deduce a uniform formula forthe Fermi energy of degenerate and relativistic electrons in the weak-magnetic field approximation. Then we obtain an expression of the special solution for the electron Fermi energy through this formula, and express the electron Fermi energy as a function of electron fraction and matter density. Our method is universally suitable for relativistic electron- matter regions in neutron stars in the weak-magnetic field approximation.

• Nuclear Engineering and Technology
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• v.5 no.2
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• pp.77-82
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• 1973

A method of obtaining the partition function for a system of electrons is developed by defining a new density matrix, in which the Fermi statistics is explicitly incorporated. The corresponding Bloch equation is formulated and a practical method of solving the equation is obtained for weak potential. This theory is applied to structurally disordered ststems which might be reasonable models for liquid metals.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.14-26
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• 2002

A new model for degenerate semiconductor quantum well devices was developed. In this model, the multi-subband Boltzmann transport equation was formulated by applying the Pauli exclusion principle and coupled to the Schrodinger and Poisson equations. For the solution of the resulted nonlinear system, the finite difference method and the Newton-Raphson method was used and carrier energy distribution function was obtained for each subband. The model was applied to a Si MOSFET inversion layer. The results of the simulation showed the changes of the distribution function from Boltzmann like to Fermi-Dirac like depending on the electron density in the quantum well, which presents the appropriateness of this modeling, the effectiveness of the solution method, and the importance of the Pauli -exclusion principle according to the reduced size of semiconductor devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.913-919
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• 2008

A new design and its experimental results of a microstrip-fed ultra-wideband tapered slot antenna(TSA) for millimeter-wave systems are presented. By utilizing the ultra-wideband microstrip-to-CPS transition(balun), ultra-wideband characteristics of the inherent TSA are retrieved. Also, the design procedure of the TSA is simplified by performing simple impedance matching between balun and antenna. The proposed TSA is shaped by using the Fermi-Dirac tapering function and corrugated at the outer edge. The implemented antenna demonstrates ultra-wideband performance for frequency ranges from 23 to over 58 GHz with the relatively high and flat antenna gain of 12 to 14 dBi and low sidelobe levels. In addition, a 4-element linear antenna array for phased-array systems and mm-wave sensor applications is also presented.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.61.1-61.1
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• 2011

We report on a detailed study on gap-state distribution in thin amorphous silicon layers(a-Si:H) with film thickness between 5 nm and 20 nm c-Si wafers performed by UV excited photoelectron spectroscopy(UV-PES). We measured how the work function, the gap state density, the position of the Fermi-level and the Urbch-energy depend on the layer thickness and the doping level of the ultra thin a-Si:H(n) layer. It was found, that for phosphorous doping the position of the Fermi level saturates at $E_F-E_V$=1.47 eV. This is achieved at a gas phase concentration of 10000 ppm $PH_3$ in the $SiH_4/H_2$ mixture which was used for the PECVD deposition process. The variation of the doping level from 0 to 20000 ppm $PH_3$ addition results in an increase of the Urbach energy from 65 meV to 101 meV and in an increase of the gap state density at midgap($E_i-E_V$=0.86eV) from $3{\times}10^{18}$ to $2{\times}1019cm^{-3}eV^{-1}$.

• Korean Journal of Optics and Photonics
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• v.9 no.2
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• pp.86-91
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• 1998

Multimode planar waveguides have been fabricated by an electric-field assisted ion exchange in soda-lime glass substrates. Measurements of the mode indices have been made and the index profiles modeled on modified Fermi function are explained by a comparative analysis with the concentration profiles obtained using an electron probe X-ray micro analyzer. The analytical measurements showed that no more than 95% of sodium ions were replaced by the cesium ions. We established formulas for guide depth, mobility, and refractive index change, given the applied electric field, the diffusion temperature, and the time. We have verified the linear relations in the formulas not only between guide and root of diffusion time but also between guide depth and the applied electric filed experimentally.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.19-24
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• 1992

The analysis of the resonant tunneling based on the exact solution of Schrodinger equations is performed in a single quantum well structure under applied bias. The transmittivity and the net tunneling current density are calculated with Airy function and the boundary conditions which is suggested by Bastard. The results are compared with those from other methods and boundary conditions. From the calculated J-V characteristics for the tunneling current, the dependence of the voltage location showing the first peak current on the various temperatures and Fermi level is investigated. In addition, the wave function within the structure is obtained and compared with that from the flat-potential model.

• ETRI Journal
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• v.22 no.3
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• pp.19-26
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• 2000

We describe a detailed numerical scheme to calculate electron transport in quantum wires using the Green function formalism combined with tight-binding orbital basis. As an example of the application, we study the electron transport in a Si nanowire containing a finite potential barrier. The effects of nonzero bias, temperature, and disorder on the barrier-induced oscillatory conductance are investigated within the context of coherent transport model. The oscillatory behavior of the conductance as a function of the Fermi energy is found to be highly sensitive to sample disorder and limited to a very low temperature and a small bias range.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.382.1-382.1
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• 2014

Graphene field-effect transistors (GFET) is one of candidates for future high speed electronic devices since graphene has unique electronic properties such as high Fermi velocity (vf=10^6 m/s) and carrier mobility ($15,000cm^2/V{\cdot}s$) [1]. Although the contact property between graphene and metals is a crucial element to design high performance electronic devices, it has not been clearly identified. Therefore, we need to understand characteristics of graphene/metal contact in the GFET. Recently, it is theoretically known that graphene on metal can be doped by presence of interface dipole layer induced by charge transfer [2]. It notes that doping type of graphene under metal is determined by difference of work function between graphene and metal. In this study, we present the GFET fabricated by contact metals having high work function (Pt, Ni) for p-doping and low work function (Ta, Cr) for n-doping. The results show that asymmetric conductance depends on work function of metal because the interfacial dipole is locally formed between metal electrodes and graphene. It induces p-n-p or n-p-n junction in the channel of the GFET when gate bias is applied. In addition, we confirm that charge transfer regions are differently affected by gate electric field along gate length.

• Journal of the Korean Chemical Society
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• v.61 no.1
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• pp.12-15
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• 2017

We presented a mapping the work function of the vanadium pentoxide ($V_2O_5$) nanonet structures by scanning Kelvin probe microscopy (SKPM). In this measurement, the $V_2O_5$ nanonet was self-assembled via dropping the solution of $V_2O_5$ nanowires (NWs) onto the $SiO_2$ substrate and drying the solvent, resulting in the networks of $V_2O_5$ NWs. We found that the SKPM signal as a surface potential of $V_2O_5$ nanonet is attributed to the contact potential difference (CPD) between the work functions of the metal tip and the $V_2O_5$ nanonet. We generated the histograms of the CPD signals obtained from the SKPM mapping of the $V_2O_5$ nanonet as well as the highly ordered pyrolytic graphite (HOPG) which is used as a reference for the calibration of the SKPM tip. By using the histogram peaks of the CPD signals, we successfully estimated the work function of ~5.1 eV for the $V_2O_5$ nanonet structures. This work provides a possibility of a nanometer-scale imaging of the work function of the various nanostructures and helps to understand the electrical characteristics of the future electronic devices.