한국신재생에너지학회:학술대회논문집
- 2011.11a
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- Pages.61.1-61.1
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- 2011
A Study on properties of a-Si:H layers by photoelectron spectroscopic
a-Si:H 분광스펙트럼 특성연구
- Yang, Hyeon-Hun ;
- Kim, Han-Wool ;
- Kim, Joo Hoe ;
- Kim, Chul Joong ;
- Lee, Chang Gwon ;
- So, Soon-Youl ;
- Park, Gye-Choon ;
- Lee, Jin
- 양현훈 ((주)큐닉스) ;
- 김한울 ((주)큐닉스) ;
- 김주회 ((주)큐닉스) ;
- 김철중 ((주)큐닉스) ;
- 이창권 ((주)큐닉스) ;
- 소순열 (목포대학교) ;
- 박계춘 (목포대학교) ;
- 이진 (목포대학교)
- Published : 2011.11.16
Abstract
We report on a detailed study on gap-state distribution in thin amorphous silicon layers(a-Si:H) with film thickness between 5 nm and 20 nm c-Si wafers performed by UV excited photoelectron spectroscopy(UV-PES). We measured how the work function, the gap state density, the position of the Fermi-level and the Urbch-energy depend on the layer thickness and the doping level of the ultra thin a-Si:H(n) layer. It was found, that for phosphorous doping the position of the Fermi level saturates at