• Progress in Superconductivity
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• 제13권2호
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• pp.85-89
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• 2011

제일원리 DFT+DMFT방법을 사용하여 철계열 고온초전도체 122 화합물 $AFe_2As_2$ (A=Ca, Sr, Ba) 에 대한 전자 및 자성 구조를 계산하였다. 계산된 전자구조는 실험에서 보고된 ARPES 결과와 어느 정도 일치함을 확인했다. 또한 계산을 통해 얻은 반자성 전이온도는 실험과 동일한 경향을 보여준다.

• Progress in Superconductivity
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• 제13권2호
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• pp.117-121
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• 2011

We have fabricated $FeSe_x$ superconducting thin films at much different substrate temperatures of 430 and $610^{\circ}C$ on $Al_2O_3$(0001) substrates by using a pulsed laser deposition (PLD) technique. Superconducting transitions for both films were shown around 10 K, but their transition width and growth directions of grains were different. We found that superconducting tetragonal FeSe phases and non-superconducting hexagonal FeSe phases were coexisted in the sample grown at the low temperature of $430^{\circ}C$, whereas the hexagonal FeSe phase was decreased with increasing fabrication temperatures.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.32-32
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• 2009

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.48-48
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• 2009

• 한국초전도ㆍ저온공학회논문지
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• 제15권2호
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• pp.16-19
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• 2013

The magneto-resistivity and electric field-current density (E-J) curves were investigated up to a magnetic field 9 T in the optimally doped $BaFe_{1.8}Co_{0.2}As_2$ single crystal with a superconducting temperature ($T_c$) of 24.6 K. The E-J Scaling behaviors below and above vortex glass transition temperature ($T_g$) were found, confirming the existence of the vortex glass phase transition. The critical exponents for the diverging spatial and time correlations at $T_g$, were obtained as v = $1.1{\pm}0.1$ and z = $4.5{\pm}0.3$, respectively. The obtained critical exponents are in good agreement with the predicted values of v ~ 1 - 2 and z > 4 within the 3D vortex glass theory.

• 한국초전도ㆍ저온공학회논문지
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• 제16권4호
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• pp.31-35
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• 2014

The upper critical field ($H_{c2}$) was determined by applying a magnetic field along the ab plane and c axis for two single crystals of $BaFe_{2-x}Ru_xAs_2$ (x=0.48 and 0.75). The anisotropy of the $H_{c2}(0)$, ${\gamma}(0)=H_{c2}{^{ab}}(0)/H_{c2}{^c}(0)$, was ~1.6 for x=0.48 and ~2.3 for x=0.75. The angle-dependent resistance measured below $T_c$ allowed perfect scaling features based on anisotropic Ginzburg-Landau theory, leading to consistent anisotropy values. Because only one fitting parameter ${\gamma}$ is used in the scaling for each temperature, the validity of the ${\gamma}$ value was compared with that determined from ${\gamma}=H_{c2}{^{ab}}/H_{c2}{^c}$. The ${\gamma}$ obtained at a temperature close to $T_c$ was 3.0 and decreased to 2.0 at low temperatures. Comparing to the anisotropy determined for electron- or hole-doped $BaFe_2As_2$ using the same method, the present results point to consistent anisotropy in Ru-doped $BaFe_2As_2$ with other electron- or hole-doped $BaFe_2As_2$.

• 한국초전도ㆍ저온공학회논문지
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• 제17권4호
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• pp.30-33
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• 2015

We report the synthesis of Ni-doped $BaFe_2Se_3$ single crystals by using a flux method. X-ray diffraction (XRD) of $Ba(Fe_{1-x}Ni_x)_2Se_3$ shows a gradual peak shift with an increase in the nominal Ni-doping rate, x = 0, 0.05, and 0.10, due to a decrease in unit-cell volume. All samples show a spin glass transition, and temperature dependence of magnetic susceptibility shows a negligible change in the spin-glass transition temperature ($T_g$) with Ni concentration x. The temperature dependence of electrical resistivity for $BaFe_2Se_3$ shows an insulating behavior, and the resistivity value at 295 K and the activation energy ($E_a$) obtained from the Arrhenius plot decrease with increasing x. These results suggest that the Ni doping can be effectively worked as a dopant for electron charge carriers, but is less efficient in controlling the magnetic property, such as spin glass transition, in the $BaFe_2Se_3$ compound.

• Progress in Superconductivity
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• 제10권2호
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• pp.87-91
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• 2009

Fluorine-doped $SmFeAsO_{1-x}F_x$ single crystals with the nominal value of x=0.2 were grown at $1350-1450^{\circ}C$ under the pressure of 3.3 GPa by using the self-flux method. Plate-shaped single crystals in the range of a few-150 ${\mu}m$ in their lateral size were obtained. The detailed crystal structure was analyzed by using the x-ray diffractometry. Superconducting transition temperature, determined by the resistive transition, of a single crystal was about 49 K with a narrow resistive transition width of ${\sim}1$ K. A relatively sharp transition, a low residual resistivity, and a large residual resistivity ratio compared with those reported for $REFeAsO_{1-x}F_x$(RE=Sm, Nd) single crystals indicate the high quality of our single crystals.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.16-16
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• 2009