• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.71-71
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• 2009

This paper describes a simple, on-chip CMOS compatible the thin-film inductor applied for the dc-dc converters. A fully CMOS-compatible thin-film inductor with a bottom NiFe core is integrated with the DC-DC converter circuit on the same chip. By eliminating ineffective top magnetic layer, very simple process integration was achieved. Fabricated monolithic thin film inductor showed fairly high inductance of 2.2 ${\mu}H$ and Q factor of 11.2 at 5MHz. When the DC-DC converter operated at $V_{in}=3.3V$ and 5MHz frequency, it showed output voltage $V_{out}=8.0V$, and corresponding power efficiency was 85%.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.324-327
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• 2014

Germanium (Ge) is a promising material for next generation nanoelectronics and multiple junction solar cells. This work investigated the electrical properties in Cu/p-type Ge Schottky diodes, using current-voltage (I-V) measurements. The Schottky barrier heights were 0.66, 0.59, and 0.70 eV from the forward ln(I)-V, Cheung, and Norde methods, respectively. The ideality factors were 1.92 and 1.78 from the forward ln(I)-V method and Cheung method, respectively. Such high ideality factor could be associated with the presence of an interfacial layer and interface states at the Cu/p-Ge interface. The reverse-biased current transport was dominated by the Poole-Frenkel emission rather than the Schottky emission.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.6 no.2
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• pp.76-80
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• 2013

In this paper, a external electrode fluorescent lamp driving inverter for LCD backlight is designed. AC input from a lamp-driven system to process up to two inverter system for the existing configuration of power-efficient than the system as well as to increase the volume and weight reduction, Furthermore low-cost advantage. AC power input in order to drive EEFL stable and AC 85V ~ 265V power factor increase in the PFC Block can be used for running the Inverter Block EEFL and composed.

• Structural Engineering and Mechanics
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• v.49 no.4
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• pp.499-508
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• 2014

We apply the Finite Fracture Mechanics criterion to address the problem of a V-notched structure subjected to mode II loading, i.e., we provide a way to determine the direction and the load at which a crack propagates from the notch tip and express the critical conditions in terms of the generalized stress intensity factor. Weight functions for V-notch emanated cracks available in the literature allow us to implement the fracture criterion proposed in an almost completely analytical manner: the determination of the critical load and the direction of crack growth is reduced to a stationary point problem. A comparison with experimental data presented in the Literature concludes the paper.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.1-10
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• 1998

A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.439-442
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• 2002

The interface between two different materials in the insulation systems is the weak-link in the underground power transmission systems, In this paper, Optimum conditions of the interface between Epoxy and EPDM is studied. The variation factor condition of interface is roughness of surface, spreading of oils, interfacial pressure and temperature. The breakdown times under the constant voltage below the breakdown voltage were also gained. The breakdown voltage at the after laying time equivalent to is calculated by the V-t characteristic and the inverse power law. When this is done, the characteristic life exponent n is used and the long time breakdown voltage can be evaluated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.289-292
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• 2004

반도체 소자의 파괴 원인으로는 주로 열, 전압, 전류, 진동 및 압력 등이 있다. 이 중에서 전압과 열을 스트레스 인자로 적용하여 가속열화 시험을 진행하였다. 전압 및 열에 의한 소자의 열화정도를 파악하기 위해 현재 상용화되어 있는 Phase Control Thyristor 중 $V_{DRM}\;=\;1500V,\;V_{BRM}\;=\;1500V, \;T_{HS}\;=\;-40{\sim}125^{\circ}C$ 정도의 사양을 가지는 소자를 사용하였다. 열화에 의한 여러 가지 변동특성 중에서 소자의 순방향 및 역방향 항복특성의 변화와 누설전류의 변화에 대해 실험을 통해 알아보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.349-352
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• 1996

When the ideality factor of collector current of AIGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) is larger than unity, conventional $I_{CO}$ / $T^2$ versus 1000/T plot used in the determination of the barrier height of base-emitter junction of HBT was deviated from the straight line. We introduced the effective temperature $T_{eff}$ as nT in the Thermionic-emission equation. The modified $I_{CO}$ /TB versus 1000/ $T_{eff}$ plot was on the straight line in the temperature range considered. The activation energy obtained from the modified plot is 1.61 eV. The conduction band discontinuity calculated using this value was 0.305 eV and this value is coincident with the generally accepted value of 0.3 eV. eV.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1505-1508
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• 1994

Lately in KEPCO, the power plant capacity has increasingly become larger than before and it has become difficult to get R.O.W for T/L. Therefore KEPCO decided to increase its system voltage level from 345kV to 765kV. By doing this, KEPCO would like to expand its transmission capability by less T/L route. In 765kV system, we should consider various kinds of environmental impacts that can be neglected in lower voltage level. These environmental impacts are very important factor in T/L design. That can be changed greatly according to the selected conductor. And also conductor selection has relation with the economy of T/L construction directly. This paper deals with some general factors to be considered and basic principles about the conductor and ground wire selection for 765KV T/L with referring to the experiences of foreign utilities.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.821-824
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• 1993

This paper deals with a $3{\phi}$ rectifier unit for telecommunication system. The rectifier unit is developed to Cope with the step-up of the AC input voltatage from 220V to 380V. By using a buck-type converter in the front-end, it keeps the input power factor high and reduces the voltage ripple in the dc output. It also has a very wide voltage regulation range, which lets the unit be applied for both the 220V and 380V input system. The study includes the power conversion scheme, control strategy, snubber circuit and finally, experimental results.