• 한국표면공학회지
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• 제33권1호
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• pp.34-37
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• 2000

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin film's c-axis orientation and grain size were analyzed by XRD (x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.685-687
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• 1999

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin films c-axis orientation and grain size were analyzed by XRD(x-ray dffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.363-366
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• 1998

Shuttered Co-Cr thin films have been developed continuously as one of the major candidates for high density recording media. In this study, Co-26at%Cr thin films with c-axis oriented h.c.p. structure prepared by a improved facing targets sputtering system. We find that the effect of microstructural changes of sputtered Co-Cr thin films on magnetic properties and changes of crystal orientation due to variation substrate temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.464-466
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• 2000

AIN thin films have been prepared by reactive sputtering method, using facing targets sputtering system with a DC power supply which can deposit a high quality thin film and control deposition condition in all range of nitrogen. The crystallographic characteristics of AIN thin films on N$_2$/Ar ratio was investigated by alpha-step and X-ray diffraction. As a result, the AIN film deposited at the pressure ratio of the nitrogen of 30% revealed strong X-ray diffraction intensity under substrate temperature 25$^{\circ}C$ and applied current 0.4A.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.901-904
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• 2000

In order to investigate the effect of deposition conditions on crystallographic properties of ZnO thin films by Facing Targets Sputtering system which can deposit thin films in plasma-free situation and change the deposition conditions in wide range. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step (Tencor) analyses. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature 300$^{\circ}C$, inter target distance 100mm. In these conditions, the rocking curve of zinc oxide thin films deposited on Glass was 3.9$^{\circ}$.

• 한국전기전자재료학회논문지
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• 제11권5호
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• pp.418-422
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• 1998

The Co-Cr films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrate. In this study, we investigated the possibility of employing FTS system for depositing Co-Cr films. The Co-Cr thin films were deposited with various sputter gas pressure($P_Ar$, 0.1~10mTorr) by using FTS apparatus at temperature of $40^{\circ}C and 220^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry (XRD) and vibrating sample magnetometer(VSM), respectively. Under argon gas pressure at 0.1mTorr, films with morphologically dense microstructure, good c-axis orientation and higher coercivity were obtained. It has been confirmed that the FTS system is very useful for preparing Co-Cr thin film recording media.

• 열처리공학회지
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• 제23권2호
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• pp.69-74
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• 2010

AlN thin films were deposited by using a two-facing-targets type sputtering system (TFTS), and their deposition characteristics, microstructure and texture were investigated. Total gas pressure was kept constant at 0.4 Pa and the partial pressures of nitrogen, $PN_2$ (($N_2$ pressure)/($Ar+N_2$ pressure)) varied from 0 to 0.4 Pa. The texture of the film cross-sections and surface morphology were observed by field emission scanning electron microscope (FE-SEM). The crystallographic orientation of the films were analyzed by X-ray diffraction (XRD). Deposition of AlN film depends on $N_2$ partial pressure. The best preferred oriented AlN thin films can be deposited at a nitrogen partial pressure of $PN_2$ = 0.52. As-deposited AlN films show preferred orientation and columnar structure, and the grAlN size of AlN films increases with increasing sputtering current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.419-422
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• 1999

We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

• Transactions on Electrical and Electronic Materials
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• 제7권5호
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• pp.271-275
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• 2006

Al oped zinc oxide (AZO) films were prepared by Facing Targets Sputtering (FTS) system for TCO applications. The electrical, optical and structural properties of AZO thin films have been investigated with input current, oxygen gas flow ratio and substrate temperature. Deposition was carried out at room temperature and $200^{\circ}C$. Working gas pressures were fixed at 1mTorr. As a result, AZO thin film deposited with an optical transmittance over 80 % and a resistivity about $10^{-4}{Omega}{\cdot}cm$.

• 한국진공학회지
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• 제9권4호
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• pp.367-372
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• 2000

$SiO_2$/Si 기판과 비정질 slide glass 기판 위에 대향타겟식스퍼터법(FTS법)을 이용하여 sputtering current 0.1~0.8 A, 방전 가스압 0.5~3mTorr, 기판온도 R.T~$400^{\circ}C$에서 ZnO 박막을 증착하였다. sputtering current 0.4 A, 가스압력 0.5 mTorr, 기판온도 30$0^{\circ}C$에서 증착된 ZnO/glass 박막과 ZnO/$SiO_2$/Si 박막의 $\Delta\theta_{50}$은 $3.8^{\circ}$와 $2.98^{\circ}$를 각각 나타내었다. 이러한 조건에서 FTS법은 비정질 slide glass 기판 위에서도 우수한 c-축 배향성을 갖는 ZnO 박막을 제작할 수 있다는 것을 알 수 있었다.