Preparation of Co-Cr Thin Films by Facing Targets Sputtering

대향타겟스퍼터링에 의한 Co-Cr 박막의 제작

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  • S. Nakagawa ;
  • M.Naoe
  • 김경환 (경원대학교 공대 전기전자공학부) ;
  • 금민종 (경원대학교 공대 전기전자공학부) ;
  • 공석현 (경원대학교 공대 전기전자공학부) ;
  • 손인환 (광운대학교 공대 전기공학과) ;
  • 최성민 (광운대학교 공대 전기공학과) ;
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  • Published : 1998.05.01

Abstract

The Co-Cr films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrate. In this study, we investigated the possibility of employing FTS system for depositing Co-Cr films. The Co-Cr thin films were deposited with various sputter gas pressure($P_Ar$, 0.1~10mTorr) by using FTS apparatus at temperature of $40^{\circ}C and 220^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry (XRD) and vibrating sample magnetometer(VSM), respectively. Under argon gas pressure at 0.1mTorr, films with morphologically dense microstructure, good c-axis orientation and higher coercivity were obtained. It has been confirmed that the FTS system is very useful for preparing Co-Cr thin film recording media.

Keywords

References

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