• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.87-90
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• 2006

In case of preparation of ITO thin film for using top electrode of Top-emitting Organic Light Emitting Diodes(TOLEDs), the ITO thin film should be prepared at room temperature and low oxygen gas flow condition in order to reduced the damage of organic layer due to the bombardment of highly energetic particles such as negative oxygen ions which accrued from the plasma. In this study, the ITO thin film with high optical transmittance and low resistivity prepared as a function of oxygen gas (0 ${\~}$ 0.8 sccm) and Ar gas was fixed at 20 sccm by the Facing Targets Sputtering (FTS) method. The electrical and optical properties of ITO thin films were measured by Hall effect measurement, UV/VIS spectrometer, respectively In the results, we obtained the ITO thin film with lowest resistivity($3{\times}10^{-4} {\Omega}{\cdot} cm$) at oxygen gas flow 0.2 sccm and optical transmittance over $80\%$ at oxygen gas flow over 0.2 sccm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.48-49
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• 2008

본 실험에서는 대향 타겟식 스퍼터링 (face target sputtering, FTS) 장비를 사용하여 플렉서블 디스플레이용 poly ethylene naphthalate (PEN) 플라스틱 기판 위에 보호층으로 사용된 $ZrO_2$ 박막의 특성들에 대해 연구하였다. FTS에 의해 3 시간동안 증착된 $ZrO_2$ 박막의 기판 온도는 $69^{\circ}C$ 로 낮은 증착 온도를 나타내었으며, 이는 유리전이온도가 낮은 PEN 과 같은 플라스틱 기판위에 박막 증착시 적용하기에 적합하다. 제작된 $ZrO_2$ 박막에서 기판 중심으로부터 거리의 함수로 측정된 박막의 두께 차이는 약 4.5%로 매우 균일한 두께를 갖는 것으로 측정되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of $O_2$ gas and substrate temperature. When the $O_2$ gas rate of 0.3 and substrate temperature $200^{\circ}C$, ZnO:Al thin film had strongly oriented c-axis and lower resistivity( < $10^{-4}{\Omega}-cm$ ).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.513-513
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• 2012

핵 융합로의 대면재질(Plasma Facing Material; PFM)은 고온의 플라즈마와 고 에너지의 이온들에 지속적으로 노출 된다. 특히 PFM은 흡착되는 기체 등에 의한 부식과 변형이 발생할 수 있다. 현재 핵 융합로 내부의 PFM으로 고려되고 있는 재질 중 하나인 고순도 탄소타일의 경우 고온의 수소동위원소 플라즈마에 직접적으로 노출되므로 이에 의한 탄소타일에 흡착되는 수소 등의 기체에 대한 정량적인 분석방법이 필요하다. 본 연구는 고순도 탄소타일 등과 같은 플라즈마 대면재료에 흡착되어 있는 물질의 정량적 분석이 가능한 TDA (Thermal Desorption Analyzer)의 개념 설계에 관한 것이다. TDA는 고온 가열($800^{\circ}C$ 이상) 및 시료 장착부 및 초고진공(~10-9 torr) 및 측정부의 두 부분으로 구성 하였다. TDA 설계시 고온 가열 및 시료 장착부는 시료 내부에 흡착되어 있는 기체의 효과적 탈착을 위한 가열 및 시료의 모양에 영향을 받지 않는 장착방법, 시료 장착부의 outgassing rate를 최소화 하는 재질 선정 등을 고려하였으며, 초고진공(~10-9 torr) 및 측정부는 초고진공 유지방법, 터보펌프 배기속도 실측을 위한 구조, 진공측정 ion 게이지, 잔류가스분석기(Residual Gas Analyzer)의 최적위치 설정 등을 고려하여 설계하였다. 개념 설계된 TDA에 대하여 발표하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.103-106
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• 2002

We prepared $Co_{77}Cr_{20}Ta_{3}$ thin film with Facing Targets Sputtering Apparatus. which can deposit a high quality thin film CoCrTa magnetic layer for Perpendicular magnetic recording media. In order to obtain Good Crystal orientation of CoCrTa thin films. We prepared Thin Films on slide glass substrate. The thickness of Buffer-layer were varied from 10 to 50 nm and Magnetic layer thickness fixed 100[nm]. input current was varied from 0.2[A] to 0.5[A]. Substrate temperature was varied from room temperature to ${250^{\circ}C}$ respectively. The crystal orientation of the CoCrTa film were examined with XRD. Introduce Buffer-layer thin films showed improvement of dispersion angle of c-axis orientation (${\Delta\theta}_{50}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.439-440
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• 2008

Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90wt.%, $SnO_2$ 10wt.%), the other is IZO($In_2O_3$ 90wt%, ZnO 10wt%). The conductive and optical properties of IZTO thin film is determined depending on variation of DC power and working pressure. Therefore, IZTO thin films were prepared with different DC power and working pressure. As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), a scanning electron microscopy (SEM), a Hall Effect measurement system. As a result, all IZTO thin films deposited on glass substrate showed over 80% of transmittance in visible range (400~800 nm) at $O_2$ gas flow rate. We could obtain IZTO thin films with the lowest resistivity $5.67\times10^{-4}$ [$\Omega{\cdot}cm$] at $O_2$ gas flow rate 0.4 [sccm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.423-424
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• 2008

A facing target sputtering (FTS) equiment is fabricated and its process characteristics are investigated to search for the possibility of applications to film passivation system for organic light emitting diodes (OLEDs). We report that the FTS system can prepare a high quality $ZrO_2$ films with a dense micro structure and an excellent uniformity less than 5% and a high transmittance over an average 80% in the visible range. We suggest that the FTS is one of the suitable deposition techniques for the thin film passivation layer of OLEDs and the gas barrier layer of polymer substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1230-1233
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• 2004

The ITO thin films were prepared by the FTS(Facing Targets Sputtering) system. The ITO thin films are deposited by changing the input current and working gas pressure. Then, electric characteristics, transmittance and surface roughness of ITO thin films were measured by Hall effect measurement, UV-VIS spectrometer and AFM. As a result, the ITO thin film was fabricated with resistivity 6xl0$^{-4}$ Ωㆍcm, carrier mobility 52.11 $\textrm{cm}^2$/Vㆍsec, carrier concentration 1.72 x $10^{20}$ $cm^{-3}$ transmittance over 85 % of ITO film at working gas pressure 1 mTorr and input current 0.6 A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.401-402
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• 2007

The preparation and characteristics of ITO anode films grown using a linear facing target sputtering (FTS) technique for use in organic light emitting diodes (OLED) and flexible OLED is described. The electrical, optical, and work function of the ITO anode, which was prepared by linear FTS at room temperature, were comparable to those of commercial ITO anode films. In particular, linear FTS-grown ITO films shows very smooth surface without defects such as pin hole and cracks due to low substrate temperature. Furthermore OLED with the linear FTS-grown ITO anode film shows comparable electrical and optical properties to those of OLED with the commercial crystalline-ITO anode film. This suggested that linear FTS is promising thin film technology for preparing high quality anode film in OLEDs and flexible OLEDs.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.9-11
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• 2013

The AZO/Ag/AZO multilayer films were deposited on polyethersulfone (PES) substrate by using facing target sputtering methods at room temperature. The AZO/Ag/AZO multilayer films with polymer substrate had advantages, such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, the AZO/Ag/AZO multilayer films (50/12/50 nm) demonstrated a sheet resistance of 11 ${\Omega}/{\square}$ and average transmittance of 87% in visible range (wavelength of 380-770 nm). Moreover, the multilayer showed stable mechanical properties compared to the single-layered AZO sample during the bending test due to the existence of the ductile Ag metal layer.