• Journal of the Korean Ceramic Society
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• v.56 no.5
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• pp.497-505
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• 2019

Lanthanum-based transition metal cations containing perovskites have emerged as potential catalysts for the intermediate-temperature (600-800℃) oxygen reduction reaction (ORR). Here, we report a facile acetylacetone-assisted combustion route for the synthesis of nanostructured La_0.6Sr_0.4Co_0.2Fe_0.8O_3-δ (LSCF6428) cathodes for intermediate-temperature solid-oxide fuel cells (IT-SOFCs). The as-prepared powder was analyzed by thermogravimetry analysis-differential scanning calorimetry. The powder calcined at 800℃ was characterized by X-ray diffraction, scanning electrode microscopy, energy dispersive X-ray spectroscopy, and Brunauer-Emmett-Teller surface area measurements. It was found that the porosity of the air electrode significantly increased by utilizing the nanostructured LSCF6428 instead of commercial powder. The performance of a single cell fabricated with the nanostructured LSCF6428 cathode increased by 112%, from 0.4 to 0.85 W cm^-2, at 700℃. Electrochemical impedance spectroscopy showed a considerable reduction in the area-specific resistance and activation energy from 133.5 to 61.5 kJ/mol, resulting in enhanced electrocatalytic activity toward ORR and overall cell performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.101-104
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• 1998

We report some methods for measuring a LiNbO$_3$ optical phase modulator bandwidth. Since Mach-Zehnder waveguide type, one of methods for modulation bandwidth measurement, is comparatively simple and useful, it was adapted in this work. In order to confirm this method, the waveguide of single and Mach-Zehnder type were fabricated on the same wafer. The Mach-Zehnder interferometric waveguide and the single channel waveguide were used for the measurement of the phase modulator's driving voltage and bandwidth for device fabrications, respectively. Ti-860$\AA$ in-diffusion was achieved in a wet-bubbling oxygen environment at 105$0^{\circ}C$/8hours. LINbO$_3$ internal chips were pigtailed to PMF(polarization maintaining fiber)/SMF(single mode fiber) using an epoxy curing technique. Examined were optical properties such as an insertion loss, propagation loss and mode size, and the loss mechanism of optical coupling between an optical fiber and a waveguide was considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.21-23
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• 2004

We report experimental results demonstrating a novel metal defined polymer optical waveguide with a low loss in electro-optic polymers for the first time. The polymer optical waveguides are created using a metal film on the top of upper cladding without any conventional etching process. The fabricated waveguides have an excellent lateral optical mode confinement at both 1.31 ${\square}m$ and 1.55 ${\square}m$ wavelength, resulting in a fiber-to lens optical insertion loss of ~ 7 dB at 1.55 ${\square}m$ and ~4.5 dB at 1.31 ${\square}m$ wavelength in a 3.5cm total length for TM polarizations, respectively. We also present the optical loss dependence of the waveguide as a function of optical wavelengths. These results may be used in the complex design of integrated polymer optical circuits that need simpler and cheaper fabrication process.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.121-122
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• 2006

Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TITs performance. Transfer characteristics of n-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of $2-30{\mu}m$ has been investigated. In this paper, we analyzed the data of n-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current (I_{DSAT}$), and transconductance ($g_m$) of n-channel poly-Si thin film transistors with various channel lengths and widths.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Journal of Dental Rehabilitation and Applied Science
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• v.19 no.3
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• pp.247-256
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• 2003

The patient had bruxism and epilepsy tendency. Inadequate or unstable posterior support was identified due to severe anterior attrition and decreased occlusal vertical dimension. Prematurities of posterior occlusal and wear facets increased the function of anterior teeth, resulting in severe wear. Wear facets displayed sharply defined peripheries, which are matched on articulated diagnostic casts. Also the patient showed C III malocclusion tendency, and lost some facial contour with drooping corners on the mouth. In this case, the alteration of OVD (Occlusal Vertical Dimention) may provide a biologically compatible adjunct to the treatment such as dentofacial esthetics, improved visual proportion in facial heightand mechanical solutions to the force-management of the masticatory system. The patient requires extensive restorative treatment to regain appropriate function, esthetics and comfort. According to the report by Farhad Fays, the average vertical distance from the maxillary to the mandibular mucolabial reflection in the region of the central incisors is approximately 34mm. However, the vertical distance of this patient was found to be 32mm, which was necessary to add gauge 20-sheets to apply vertical dimension. A removable occlusal overlay splint, which restores OVD to the estimated optimalposition, is the general first trial. The patient was observed periodically for 6 weeks, while appropriate adjustments were made vertical dimension to function. When patient felt comfortable with the splint, the teeth were prepared, and provisional restorations are placed for 3 months. The provisional restoration was fabricated by a diagnostic wax-up. When the patient felt comfortable with the provisional restoration, the final restoration mimics OVD, function, and esthetics that have been developed in the treatment restorations. Restoration of the extremely worn dentition presents a substantial challenge to thedentists. Therefore, careful evaluation of the etiology, history, and factors associated with occlusal vertical dimension should be preceded prior to the appropriate treatment planning.

• Journal of Dental Rehabilitation and Applied Science
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• v.31 no.2
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• pp.158-168
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• 2015

This article describes how to use digital system in a fully edentulous case that diagnosis to definitive prosthesis fabrication. While proceeding oral scan and CBCT taking, digital markers were attached on maxillary palate and lower existing denture. Using CBCT image and oral scan image, the bone contour and anatomical structures were analyzed and flapless surgical guide, customized abutment and prosthesis were made. After the osseointegration, the definitive prosthesis was fabricated using the oral scan image with scan body. It provides clinicians with a fast workflow and improves clinical efficiency.

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.19-24
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• 2014

We report the nitrogen monoxide (NO) gas sensing properties of p-type CuO-nanorod-based gas sensors. We synthesized the p-type CuO nanorods with breadth of about 30 nm and length of about 330 nm by a hydrothermal method using an as-deposited CuO seed layer prepared on a $Si/SiO_2$ substrate by the sputtering method. We fabricated polycrystalline CuO nanorod arrays at $80^{\circ}C$ under the hydrothermal condition of 1:1 morality ratio between copper nitrate trihydrate [$Cu(NO_2)_2{\cdot}3H_2O$] and hexamethylenetetramine ($C_6H_{12}N_4$). Structural characterizations revealed that we prepared the pure CuO nanorod array of a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the gas sensing measurements that the p-type CuO nanorod gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $200^{\circ}C$. We also found that these CuO nanorod gas sensors showed reversible and reliable electrical response to NO gas at a range of operating temperatures. These results would indicate some potential applications of the p-type semiconductor CuO nanorods as promising sensing materials for gas sensors, including various types of p-n junction gas sensors.

• Journal of Powder Materials
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• v.11 no.3
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• pp.253-258
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• 2004

We report a carbothermal reduction process for massive synthesis of monolithic W$_{18}$O$_{49}$ phase from tungsten oxide in the presence of carbon source. Carbon black powder was used as a carbon source and added to WO$_3$ by 40 weight percent. Bundles of W$_{18}$O$_{49}$ rods were formed over the temperature range of 80$0^{\circ}C$$^{\circ}C$ to 90$0^{\circ}C$. Pure W$_{18}$O$_{49}$ bundles could be separated from the mixture of W$_{18}$O$_{49}$ and residual carbon black powder. Field emission character of W$_{18}$O$_{49}$ phase was determined using the extracted W$_{18}$O$_{49}$ rods. Flat lamp fabricated from the W$_{18}$O$_{49}$ rods showed the turn-on field of 9.3 V/${\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.467-468
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFT) that consist of indium-zinc-oxide (IZO), PVP (poly-vinyl phenol), and Ni for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The IZO S/D electrodes of which the work function is well matched to that of P3HT were deposited on a P3HT channel by thermal evaporation of IZO and showed a moderately low but still effective transmittance of ~25% in the visible range along with a good sheet resistance of ${\sim}60{\Omega}/{\square}$. The maximum saturation current of our P3HT-based TFT was about $15{\mu}A$ at a gate bias of -40V showing a high field effect mobility of $0.05cm^2/Vs$ in the dark, and the on/off current ratio of our TFT was about $5{\times}10^5$. It is concluded that jointly adopting IZO for the S/D electrode and PVP for gate dielectric realizes a high-quality P3HT-based TFT.