• 한국정보통신학회논문지
• /
• 제11권4호
• /
• pp.754-759
• /
• 2007

FED는 잠재적인 평판패널기술에 따라 현재 탐구를 하였다. 특정하게, 최적화는 $Y_2O_3-Nb_2O_5$와 영향으로 효과적인 청색방출 형광체에 따라 형광체의 입자의 크기에 의해 발광이 모이는 정통한 것이었다. 여기는 254nm 이하이며, Bi는 $YNbO_4$ 형광체가 강하게 보였고, 청색 방출대는 비교적 폭이 좁았으며, 약 420-450 nm에 효과가 정점에 달하였다. 특정하게, 0.4 wt% Bi는 이트륨 형광체로서 도핑 이었으며 최대 방출강도를 보였고, $Y_2SiO_5:Ce$ 형광체가 훨씬 많음에 따라 거의 3배였다. 마지막으로 Ce는 $Y_2SiO_5$ 형광체로서 도핑이었으며 광대한 청색방출대와 강하게 나타내었다. 0.02-0.03 mol 농도로서 최대방출강도와 390-420 nm 이며 중심이었다.

• Journal of Korean Vacuum Science & Technology
• /
• 제3권1호
• /
• pp.79-84
• /
• 1999

the photolithographic patterning on an indium-tin oxide (ITO) glass and the electro-phoretic deposition were combined for preparing the screen of the full-color field emission display(FED). the patterns with a pixel of 400$\mu\textrm{m}$ on the ITO-glass were made by etching the ITO with well-prepared etchant consisting of HCL, H2O, and HNO3. Electrophoretic method was carried out in order to deposit each spherical red (R), green(G), and blue (B) phosphor on the patterned ITO-glass. The process parameters such as bias voltage, salt concentration, and deposition time were optimized to achieve clear boundaries. It was found that the etching process of ITO combined with electrophoretic method was cost-effective, provided distinct pattern, and even reduced process steps compared with conventional processes. The application of reverse bias to the dormant electrodes while depositing the phosphors on the stripe pattern was found to be very critical for preventing the cross-contamination of each phosphor in a pixel.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.1219-1224
• /
• 2006

This study investigates the effect of $NH_3$ gas upon the growth of carbon nanotubes (CNTs) using thermal chemical vapor deposition. It is considered that the CNT synthesis occurs mainly through two steps, clustering of catalyst particles and subsequent growth of CNTs. We thus introduced $NH_3$ during either an annealing or growth step. When $NH_3$ was fed only during annealing, CNTs grew longer and more highly crystalline with diameters unchanged. An addition of $NH_3$ during growth, however, resulted in shorter CNTs with lower crystallinity while increased their diameters. Vertically aligned, highly populated CNT samples showed poor field emission characteristics, leading us to apply post-treatments onto the CNT surface. The CNTs were treated by adhesive tapes or etched back by dc plasma of $N_2$ to reduce the population density and the radius of curvatures of CNTs. We discuss the morphological changes of CNTs and their field emission properties upon surface treatments.

• 전자공학회논문지D
• /
• 제34D권4호
• /
• pp.100-105
• /
• 1997

3-dimensional finite element mehtod (FEM) elecrical field analysis was performed to obtain electric fields on a field emission display (FED) tip in an array form. Because, unlike a single tip structure, there is no azimuthal symmetry for a tip aary, 3D analysis is necessary. To reduce memory requriement the simulatio was performed by applying the neumann boundary condition to the intermediate plane between tips to take the effect of the array on the electric field into account and corresponding current was calculated. To verify our algorithm, comparison between simulation resutls and experimental data from another paper was made and the difference was discussed.

• Transactions on Electrical and Electronic Materials
• /
• 제3권1호
• /
• pp.4-8
• /
• 2002

The typical mold method for FED (field emission display) fabrication is used to form a gate electrode, a gate oxide layer, and emitter tip after fabrication of a mold shape using wet-etching of Si substrate. However, in this study, new mold method using a side wall space structure was developed to make sharp emitter tips with the gate electrode. In new method, gate oxide layer and gate electrode layer were deposited on a Si wafer by LPCVD (low pressure chemical vapor deposition), and then BPSG (Boro phosphor silicate glass) thin film was deposited. After then, the BPSG thin film was flowed into the mold at high temperature in order to form a sharp mold structure. TiN was deposited as an emitter tip on it. The unfinished device was bonded to a glass substrate by anodic bonding techniques. The Si wafer was etched from backside by KOH-deionized water solution. Finally, the sharp field emitter array with gate electrode on the glass substrate was formed.

• 한국진공학회지
• /
• 제15권4호
• /
• pp.374-379
• /
• 2006

본 연구에서는 전계 방출소자로 사용하기 위한 탄소나노튜브의 합성 방법으로, pin to plate type의 대기압 플라즈마 소스를 사용한 AP-PECVD(Atmosphere pressure plasma enhanced chemical vapor deposition)를 이용하였으며, 이를 통하여 대기압에서 성장된 탄소나노튜브의 구조적 및 전기적 특성을 연구하였다. 유리 / 크롬 / 니켈을 기판으로 사용하여 $400{\sim}500^{\circ}C$ 변화 영역에서 탄소나노튜브를 성장시킨 결과 다중벽 탄소나노튜브가 얻어짐을 알 수 있었다. $500^{\circ}C$에서 성장시킨 탄소나노튜브의 경우 FT-Raman을 이용한 분석 결과 $I_D / I_G$ ratio 가 0.772 임을 관찰하였으며 TEM으로 분석결과, 내부의 그래파이트층은 15 - 20 층, 내부 직경은 10-15nm, 외부 직경은 30 - 40nm 이고, 각 층간의 간격은 0.3nm 임을 알 수 있었다. 또한 전계 방출 문턱전압은 $2.92V/{\mu}m$ 이고, FED 에서 요구되는 $1mA/cm^2$의 방출전류밀도는 $5.325V /{\mu}m$의 문턱전압 값을 가지는 것을 관찰하였다.

• Journal of Korean Vacuum Science & Technology
• /
• 제3권1호
• /
• pp.95-97
• /
• 1999

A 3.12" FED panel was packaged successfully using the anode plate on which phosphors and black matrix were coated and cathode plate containing emitter arrays. The vacuum level of the panel was investigated during panel evacuation, tip-off and getter activation process. The packaged panel exhibited vacuum level below 2${\times}$10-6 Torr. Similar experiments were carried out for 10" panel made of bare plates. In addition, the vacuum level of two panels was compared continuously after tip off process; one with the getter and the other without it.

• 한국전기전자재료학회논문지
• /
• 제13권9호
• /
• pp.776-780
• /
• 2000

ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate by RF Magnetron Sputtering. Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 50$0^{\circ}C$ in this investigation. PL spectrum of ZnGa$_2$O$_4$ thin films showed broad band luminescence spectrum.

• 한국세라믹학회지
• /
• 제36권5호
• /
• pp.478-482
• /
• 1999

SrTiO3 :Al, Pr phosphor as an oxide compound phosphor is expect to be applied for a field emission display(FED). In this phosphor the excitation spectrum shows a different tendency according to an addition Al3+ and Pr3+ In this excitation spectrum the main peak at 359 nm represent excitation level of Pr3+(1S0longrightarrow1D2 transition) and the absorption characteristic according to Ti/Sr molar ratio is influenced by the structure symmetry. The emission spectrum exhibits the red luminescence with the radiative decay of the 1D2 states(1D2 longrightarrow3H4 transition) The concentration quenching phenomena at 1D2 state shows up as Al3+ and Pr3+ ion concentration increases.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.316-319
• /
• 2000

By RF magnetron sputtering ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate. Crystallographic orientation was characterized by x-ray diffraction(XRD). Surface morphology and microstructure were observed by scanning electron microscope(SEM). Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. PL spectrum of ZnGa$_2$O$_4$thin films showed broad band luminescence spectrum.