Characteristics of $ZnGa_2$$O_4$phosphors thin film for FED(Field Emission Display) by RF Magnetron Sputtering

RF Magnetron Sputtering법에 의한 FED용 $ZnGa_2$$O_4$형광체의 특성분석

  • Published : 2000.09.01

Abstract

ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate by RF Magnetron Sputtering. Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 50$0^{\circ}C$ in this investigation. PL spectrum of ZnGa$_2$O$_4$ thin films showed broad band luminescence spectrum.

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