• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.195-198
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• 2003

본 연구에서는 MILC 및 FALC를 도핑 타입에 따른 온도별 패턴별 인가 전압별로 진행하여 현미경 및 FESEM 관찰을 함으로써 그 메커니즘을 규명하고자 하였다. LPCVD를 이용하여 $1000\;{\AA}$ a-Si 을 glass에 입힌 후 photolithography법 또는 Hard Mask법으로 Ni $200\;{\AA}$ 을 선택적으로 증착하였으며 Pt 전극을 Sputtering법으로 제작하였다. $33\;{\sim}\;200\;V/cm$의 전기장 하에서 MILC 속도가 2배 정도 증가되는 현상이 관찰되었으며 또한 인접패턴에 의해 FALC 속도가 영향을 받는 현상이 관찰되었다. 또한 전자가 움직이는 방향으로 MILC 선단영역 전후에 Void가 발생하는 영역이 존재함을 발견하였다. FESEM 분석을 통하여 FALC 영역 및 Void 영역을 관찰한 결과 도핑 종류에 따라 결정화 양상이 다른 것이 관찰되었으며 Void 분석결과 Charged vacancy가 어닐링시 결집되어 나타나는 것으로 분석할 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.93-97
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• 2003

The crystallization behavior of amorphous silicon is affected by direction and intensity of electric field in FALC（Field-Aided Lateral Crystallization). Electric field was calculated in a simplified model using conductivity data of Mo, a-Si, $SiO_2$and boundary conditions for electric potential at the electrodes. The magnitude of electric field intensity in each corner of cathode was much larger than that in the center of patterns, and the electric field direction was 50~60 degree outside to cathode. And electric field intensity at a relatively small pattern was larger than that of a large pattern.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.39-39
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.39-39
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• 2002

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.210-214
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• 2002

The crystallization behavior of amorphous silicon (a-Si) film was investigated by using Cu-field aided lateral crystallization (Cu-FALC) process below $450^{\circ}C$. The lateral crystallization was induced from the Cu deposited region outside of pattern toward the Cu-free region inside of the pattern by applying an electric field during heat treatment. As expected, the lateral crystallization toward Cu-free region proceeded from negative toward positive electrode side. The occurrence of Cu-FALC phenomenon was interpreted in terms of dominant diffusing species in the reaction between Cu and Si. Even at the annealing temperature of $350^{\circ}C$, the large dendrite-shaped branches were formed in the crystallized region and the polarity in the lateral crystallization was clearly observed. Consequently, we could successfully crystallize the a-Si at the temperature as low as $350^{\circ}C$ by an electric field of 30 V/cm with fast crystallization velocity of 12 $\mu$m/h.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.160-165
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• 2001

The effects of various metals on Field Aided Lateral Crystallization (FALC) behaviors of amorphous silicon (a-Si) were investigated. Under an influence of electric field, metals such s Cu, Ni and Co were found to fasten the lateral crystallization toward a metal-free region, exhibiting a typical FALC behavior while the lateral crystallization of a-Si was not obvious for Pd. However, Au, Al and Cr did not induce the lateral crystallization of a-Si in metal-free region. Such phenomenological differences in various metals were studied in terms of dominant diffusing species (DDS) in the reaction between metal and Si. It was judged that the applied electric field enhanced the crystallization velocity by accelerating the diffusion of metal atoms since the occurrence of lateral crystallization would be strongly dependent on the diffusion of metal atoms than that of Si atoms. Therefore, it was concluded that he only metal-dominant diffusing species in the reaction between metal and Si results in the crystallization of a-Si in metal-free region.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.548-551
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• 2002

The crystallization of amorphous silicon (a-Si) was achieved using a field aided lateral crystallization (FALC) process at 350 $^{\circ}C$. Under the influence of an electric field, Cu is found to drastically enhance the lateral crystallization velocity of a-Si. When an electric field was applied to the selectively Cu-deposited a-Si film during the heat treatment at temperature as low as 350 $^{\circ}C$, dendrite-shaped crystallization of a-Si progressed toward Cu-free region and the crystallization from negative electrode side toward positive electrode side was accelerated. We identified that 1000${\AA}$ thick a-Si film was completely crystallized by Cu-FALC process at 350 $^{\circ}C$ by TEM analysis.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.243-246
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• 1997

A new technique for low temperature crystallization of amorphous silicon, called field aided lateral crystallization(FALC) was attempted. To demonstrate the concept of FALC, thin layer of nickel(30${\AA}$) was deposited on top of amorphous silicon film and the electric field was applied during the crystallization. The effects of electric field on the crystallization behavior of amorphous silicon film were investigated.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.128-128
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.189-189
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• 2003

최근, Low-temperature Poly-Si(LTPS) TFT시장이 새롭게 형성됨에 따라 저온결정화 기술 연구가 활발히 진행되고 있다. 그러나, 기존의 저온결정화방법에 비해 수율이 높고 생산단가를 낮출 수 있으며 대 면적 프로세스 적용이 가능한 결정화공정개발이 시급히 필요한 실정이다. 본 연구에서는 TFT-LCD array를 구성하고 있는 데이터 라인과 ITO 공통 전극이 개별 트랜지스터의 소스와 드레인에 연결되어있다는 점에 착안하여, 전계를 이용한 방향성유도결정화법(Field Aided Lateral Crystallization)을 이에 적용하였으며 채널영 역의 균일한 결정화를 위하여 컨택홀의 모양에 변화를 주어 결정화 실험을 진행하였다. 이 방법은 간단한 공정(TFT-LCD way를 통한 전계 인가 및 열처리)으로 패널내의 모든 채널영 역을 균일하게 결정화할 수 있을 것으로 기대되는 방식이다.